A write control unit selects, in a row or column direction, N storing units from N×N storing units for storing pixel data of N (N≧2) read lines of image pickup devices and writes the data in sets of N pixels thereto, and switches a selection direction for selecting the storing units each time writes of the data of N lines are completed. A read control unit selects, in a direction different from the selection direction, N storing units and starts parallel reads of the data of N lines during writes of the data of every N-th line. Each storing unit to be first selected in the writes of the data of every N-th line performs write and read operations using different terminals, and each of the remaining storing units performs write and read operations using a common terminal.

A spectral camera for producing a spectral output is disclosed. The spectral camera has an objective lens for producing an image, an optical duplicator, an array of filters, and a sensor array arranged to detect the filtered image copies simultaneously on different parts of the sensor array. Further, a field stop defines an outline of the image copies projected on the sensor array. The filters are integrated on the sensor array, which has a planar structure without perpendicular physical barriers for preventing cross talk between each of the adjacent optical channels. The field stop enables adjacent image copies to fit together without gaps for such barriers. The integrated filters mean there is no parasitic cavity causing crosstalk between the adjacent image copies. This means there is no longer a need for barriers between adjacent projected image copies, and thus sensor area can be better utilized.

In a state that a plurality of capacitances are connected between input and output nodes of an amplifier, a short circuit is established between the input and output nodes of the amplifier. In a state that at least one of the capacitances is isolated from the input and output nodes of the amplifier, the plurality of capacitances are connected to the input and output nodes of the amplifier, in a case that an output from the amplifier is larger than a threshold.

A ramp voltage generator includes a first ramp voltage generation block suitable for generating a first ramp voltage with a first slope in response to a bias signal and a first ramp control signal, and a second ramp voltage generation block suitable for generating a second ramp voltage with a second slope corresponding to the first slope in response to the bias signal, a second ramp control signal, and a slope correction signal.

The present technology relates to a semiconductor device and a method of manufacturing the same, a semiconductor module, and an electronic device capable of more certainly improving an optical characteristic and chromatic aberration. A semiconductor package provided with a pedestal having a cylindrical shape including a curved surface curved so as to be concave to a light incident side, and a linear image sensor on which a plurality of pixels each including a photoelectric conversion element is arranged in a one-dimensional direction, the linear image sensor fixed on the curved surface on which a light-receiving area formed of a plurality of pixels is curved so as to be concave to the light incident side is provided. The present technology may be applied to the semiconductor package used in an image reading device, for example.

A solid-state imaging device according to the present disclosure includes pixels arranged two-dimensionally, each of the pixels including: a metal electrode; a photoelectric conversion layer that is on the metal electrode and converts light into an electrical signal; a transparent electrode on the photoelectric conversion layer; an electric charge accumulation region that is electrically connected to the metal electrode and accumulates electric charges from the photoelectric conversion layer; an amplifier transistor that applies a signal voltage according to an amount of the electric charges in the electric charge accumulation region; and a reset transistor that resets electrical potential of the electric charge accumulation region, in which the reset transistor includes a gate oxide film thicker than a gate oxide film of the amplifier transistor.

.[.The present invention relates to an.]. .Iadd.An .Iaddend.image processing apparatus which can restore, from a color and sensitivity mosaic image acquired using a CCD image sensor of the single plate type or the like, a color image signal of a wide dynamic range wherein the sensitivity characteristics of pixels are uniformized and each of the pixels has all of a plurality of color components .Iadd.is provided.Iaddend.. A sensitivity uniformization section uniformizes the sensitivities of pixels of a color and sensitivity mosaic image to produce a color mosaic image, and a color interpolation section interpolates color components of the pixels of the color mosaic image M to produce output images R, G and B. The .[.present invention.]. .Iadd.image processing apparatus .Iaddend.can be applied to a digital camera which converts a picked up optical image into a color image signal of a wide dynamic range.

A system and method for driving a solid-state image pickup device including a pixel array unit including unit pixels. Each unit pixel includes a photoelectric converter, column signal lines and a number of analog-digital converting units. The unit pixels are selectively controlled in units of rows. Analog signals output from the unit pixels in a row selected by the selective control though the column signal lines are converted to digital signals via the analog-digital converting units. The digital signals are added among a number of unit pixels via the analog-digital converting units. The added digital signals from the analog-digital converting units are read. Each unit pixel in the pixel array unit is selectively controlled in units of arbitrary rows, the analog-distal converting units being operable to performing the converting in a (a) normal-frame-rate mode and a (b) high-frame-rate mode in response to control signals.

The invention relates to a structure of an active pixel of the CMOS type (1) that comprises: at least one photodiode (10), characterized in that it comprises means for reading any bias voltage in the evolution phase of the photodiode (10) upon exposure.

A solid-state imaging device includes: a first electrode formed above a semiconductor substrate; a photoelectric conversion film formed on the first electrode and for converting light into signal charges; a second electrode formed on the photoelectric conversion film; a charge accumulation region electrically connected to the first electrode and for accumulating the signal charges converted from the light by the photoelectric conversion film; a reset gate electrode for resetting the charge accumulation region; an amplification transistor for amplifying the signal charges accumulated in the charge accumulation region; and a contact plug in direct contact with the charge accumulation region, comprising a semiconductor material, and for electrically connecting to each other the first electrode and the charge accumulation region.