In an example embodiment, an image processing device includes a pixel array including pixels two-dimensionally arranged and configured to capture an image, each of the pixels including a plurality of photoelectric conversion elements and an image data processing circuit configured to generate image data from pixel signals output from the pixels. The image processing device further includes a color data processing circuit configured to extract color data from the image data and output extracted color data. The image processing device further includes a depth data extraction circuit configured to extract depth data from the image data and output extracted depth data. The image processing device further includes an output control circuit configured to control the output of the color data and the depth data.

The present technology relates to a signal processing device and method, and a program that enable easier and more accurate failure detection. The signal processing device includes: an addition unit that adds test data for failure detection to valid data on which predetermined processing is to be performed, two or more samples processed in parallel in different paths having a same sample value in the test data; and a signal processing unit that performs the predetermined processing on the valid data and the test data that has been added to the valid data by a plurality of the paths. The present technology can be applied to in-car cameras.

The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.

Provided are a first photoelectric conversion unit, a second photoelectric conversion unit having a smaller electric charge amount to be converted per unit time than the first photoelectric conversion unit, a charge accumulation unit that accumulates an electric charge generated by the second photoelectric conversion unit, a charge voltage conversion unit, a first transfer gate unit that transfers an electric charge from the first photoelectric conversion unit to the charge voltage conversion unit, a second transfer gate unit that couples potentials of the charge voltage conversion unit and the charge accumulation unit, a third transfer gate unit that transfers an electric charge from the second photoelectric conversion unit to the charge accumulation unit, an overflow path formed under a gate electrode of the third transfer gate unit, where the overflow path transfers an electric charge overflowing from the second photoelectric conversion unit to the charge accumulation unit, and a light reducing unit that reduces light to enter the second photoelectric conversion unit.

To provide a solid-state imaging device and an electronic apparatus capable of achieving both of a high dynamic range operation and an auto focus operation in a pixel configuration in which a plurality of unit pixels includes two or more subpixels. There is provided a solid-state imaging device including: a first pixel separation region that separates a plurality of unit pixels including two or more subpixels; a second pixel separation region that separates each of the plurality of unit pixels separated by the first pixel separation region; and an overflow region that causes signal charges accumulated in the subpixels to overflow to at least one of adjacent subpixels, in which the overflow region is formed between a first subpixel and a second subpixel.

An optical filter (1a) includes a light-absorbing layer (10). The light-absorbing layer absorbs light in at least a portion of the near-infrared region. When light with a wavelength of 300 nm to 1200 nm is incident on the optical filter (1a) at incident angles of 0°, 30°, and 40°, the optical filter (1a) satisfies given transmittance requirements. Nine differences each obtained as a difference between one and another of IE.sub.θ.sup.xR, IE.sub.θ.sup.yG, and IE.sub.θ.sup.zB defined for incident angles θ° of 0°, 30°, and 40° satisfy given requirements, and ranges satisfy given requirements, each range being a difference obtained by subtracting the smallest value of three differences from the largest value of the three differences, the three differences obtained from IE.sub.θ.sup.xR, IE.sub.θ.sup.yG, and IE.sub.θ.sup.zB collectively defined for the same pair selected from the incident angles θ°.

The present disclosure relates to a solid-state imaging device and an electronic device that can be provided with phase difference pixels with a lower degree of difficulty in manufacturing. Provided is a solid-state imaging device including a pixel array unit in which a plurality of pixels is two-dimensionally arrayed, in which the pixel array unit has an array pattern in which a plurality of pixel groups each including neighboring pixels of an identical color is regularly arrayed, and among the plurality of pixel groups arrayed in the array pattern, pixels configuring a light-shielded pixel group are shielded in an identical direction side from light, the light-shielded pixel group being a pixel group including pixels each being shielded in a part of a light incident side from the light. The present technology can be applied to, for example, a CMOS image sensor including pixels for phase difference detection.

An example method includes capturing, by an image capture device, a first image having a plurality of pixels. Each pixel includes a plurality of channels, and the first image is captured in accordance with first exposure parameters. The method includes determining, by a controller of the image capture device, average pixel intensities for each of the plurality of channels. The method includes determining, by the controller, a weighted average of pixel intensities using the average pixel intensities. The method includes setting, by the controller, a gain that is proportional to a ratio of a desired average pixel intensity relative to the weighted average of pixel intensities. The method includes setting, by the controller, second exposure parameters for a second image based on the gain. The method includes capturing, by the image capture device, the second image in accordance with the second exposure parameters.

A photoelectric conversion element includes a pixel area which includes a plurality of rows and a plurality of columns, a first filter which is provided in a first pixel constituting the pixel area and allows passage of visible light in a first wavelength band and infrared light in a second wavelength band, a second filter which is provided in a second pixel constituting the pixel area and allows the passage of the visible light band and the infrared light, and a first light reduction unit which reduces the infrared light having passed through the second filter. The third filter which allows the passage of the visible light and the infrared light is provided in, among pixels constituting the pixel area, each pixel other than the first pixel and the second pixel.

A solid-state imaging apparatus includes a pixel array part in which a plurality of pixels are two-dimensionally arranged, in which each pixel has a first photoelectric conversion region formed above a semiconductor layer, a second photoelectric conversion region formed in the semiconductor layer, a first filter configured to transmit a light in a predetermined wavelength region corresponding to a color component, and a second filter having different transmission characteristics from the first filter, one photoelectric conversion region out of the first photoelectric conversion region and the second photoelectric conversion region photoelectrically converts a light in a visible light region, the other photoelectric conversion region photoelectrically converts a light in an infrared region, the first filter is formed above the first photoelectric conversion region, and the second filter has transmission characteristics of making wavelengths of lights in an infrared region absorbed in the other photoelectric conversion region formed below the first filter the same.