An imaging element includes a photoelectric conversion unit including a first electrode 11, a photoelectric conversion layer 13, and a second electrode 12 that are stacked, in which the photoelectric conversion unit further includes a charge storage electrode 14 arranged apart from the first electrode 11 and arranged to face the photoelectric conversion layer 13 through an insulating layer 82, and when photoelectric conversion occurs in the photoelectric conversion layer 13 after light enters the photoelectric conversion layer 13, an absolute value of a potential applied to a part 13.sub.C of the photoelectric conversion layer 13 facing the charge storage electrode 14 is a value larger than an absolute value of a potential applied to a region 13.sub.B of the photoelectric conversion layer 13 positioned between the imaging element and an adjacent imaging element.

Systems and techniques are described herein for capturing images. For instance, a process can include obtaining a first image associated with a first exposure setting and obtaining a second image associated with a second exposure setting that is different from the first exposure setting. The process can include obtaining motion information associated with at least one of the first image and the second image and determining, based on the motion information, that motion associated with a first pixel of the first image exceeds a threshold. The process can include generating, based on the motion information, a fused image including a first set of pixels from the first image and a second set of pixels from the second image. The first set of pixels from the first image includes the first pixel based on the determination that the motion associated with the first pixel exceeds the threshold.

The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array.

The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √{square root over (2)} times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

This technology relates to a solid-state image sensor configured to make smaller the chip size of a CIS that uses an organic photoelectric conversion film, and to an electronic apparatus. A solid-state image sensor according to a first aspect of this technology is characterized in that it includes a first substrate and a second substrate stacked one on top of the other and a first organic photoelectric conversion film formed on the first substrate and that a latch circuit is formed on the second substrate. This technology may be applied to back-illuminated CISs, for example.

A solid-state imaging apparatus includes first, second, and third semiconductor regions. The third semiconductor region has a second conductivity type. The third semiconductor region extends from a region below the second semiconductor region of a first pixel to a region below the second semiconductor region of a second pixel in the first and second pixels adjacent to each other among a plurality of pixels.

The present disclosure relates to a solid-state imaging device that can achieve a high S/N ratio at a high sensitivity level without any decrease in resolution, and to an electronic apparatus. In the upper layer, the respective pixels of a photoelectric conversion unit that absorbs light of a first wavelength are tilted at approximately 45 degrees with respect to a square pixel array, and are two-dimensionally arranged in horizontal directions and vertical directions in an oblique array. The respective pixels of a photoelectric conversion unit that is sensitive to light of a second or third wavelength are arranged under the first photoelectric conversion unit. That is, pixels that are √2 times as large in size (twice as large in area) and are rotated 45 degrees are arranged in an oblique array. The present disclosure can be applied to solid-state imaging devices that are used in imaging apparatuses, for example.

An imaging device includes pixels. Each of the pixels includes a first photoelectric conversion layer, a first pixel electrode, a second photoelectric conversion layer, a second pixel electrode, a third photoelectric conversion layer, a third pixel electrode, a first counter electrode, and a second counter electrode. The first pixel electrode, the first photoelectric conversion layer, the first counter electrode, the second photoelectric conversion layer, the second pixel electrode, the second counter electrode, the third photoelectric conversion layer, and the third pixel electrode are arranged in this order.

The present technology relates to a solid-state imaging device, a driving method therefor, and an electronic apparatus capable of acquiring a signal to detect phase difference and a signal to generate a high dynamic range image at the same time. The solid-state imaging device includes a pixel array unit in which a plurality of pixels that receives light of a same color is arranged under one on-chip lens. The plurality of pixels uses at least one pixel transistor in a sharing manner, some pixels out of the plurality of pixels are set to have a first exposure time, and other pixels are set to have a second exposure time shorter than the first exposure time. The present technology can be applied to, for example, a solid-state imaging device or the like.

To enable tunable wavelength extraction and detection of a narrow band, while maintaining resolution.

Provided is a signal processing device including: an acquisition unit that acquires a signal of a first wavelength band in which wavelength extraction is possible in a tunable manner by means of postprocessing and a signal of a second wavelength band to be used for a special purpose; and a signal processing unit that performs signal processing using the signal of the first wavelength band and the signal of the second wavelength band.

A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.