A solid-state imaging device and an imaging apparatus capable of realizing further miniaturization of an imaging apparatus and further improvement of light use efficiency are to be provided. The present technology provides a solid-state imaging device that includes a plurality of pixels arranged one- or two-dimensionally, in which each pixel includes at least a light receiving unit, and the light receiving unit included in at least some of the plurality of pixels have circularly polarized dichroism. The present technology also provides an imaging apparatus that includes at least: the solid-state imaging device; and a signal processing unit that generates an image capturing only specific circularly polarized light, on the basis of a signal obtained from at least one of the pixels of the solid-state imaging device.

A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate and on the substrate, first photodiodes at least partly formed in the substrate, a photosensitive layer covering the substrate, and color filters, the photosensitive layer being interposed between the substrate and the color filters. The image sensor further includes first and second electrodes on either side of the photosensitive layer and delimiting second photodiodes in the photosensitive layer, the first photodiodes being configured to absorb the electromagnetic waves of the visible spectrum and of a first portion of the infrared spectrum and the photosensitive layer being configured to absorb the electromagnetic waves of the visible spectrum and to give way to the electromagnetic waves of said first portion of the infrared spectrum.

[Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic. [Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1), ##STR00001## where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R.sub.1 to R.sub.3 each independently represent a substituted or unsubstituted ring structure, and at least one of R.sub.1 to R.sub.3 includes at least one hetero atom in the ring structure.

An apparatus is provided. The apparatus includes a semiconductor substrate including a first photodiode to generate a first charge, a second photodiode to generate a second charge, a barrier layer between the first photodiode and the second photodiode, wherein the first photodiode, the barrier layer, and the second photodiode form a stack. The apparatus further includes a floating drain and one or more gates including: a first gate portion on the semiconductor substrate and a second gate portion extending from the front side surface through the first photodiode and reaching the barrier layer. The first gate portion is configured to conduct a first signal to control flow of charge from the first photodiode to the floating drain, and the second gate portion is configured to conduct a second signal to control the barrier layer to control the flow of the second charge.

A sensor includes a first image pixel array including first image pixels and a second image pixel array including second image pixels. A polarization layer is disposed between the first image pixels and the second image pixels. Scene light incident upon the second image pixels propagates through the first image pixels and the polarization layer to reach the second image pixels.

To achieve more secure authentication. A solid-state imaging device according to an embodiment includes: a plurality of unit pixels arranged in a matrix; and signal processing circuits each of which reads out a signal from each of the unit pixels. Each of the unit pixels includes: a first pixel that is disposed on a first surface and that detects light of a first wavelength band; and a second pixel that is disposed on a second surface parallel to the first surface and that detects light of a second wavelength band different from the first wavelength band. The signal processing circuit includes a first conversion circuit that is connected to the first pixel and the second pixel in each of the unit pixels and that converts an analog signal output from each of the first pixel and the second pixel into a digital signal.

A color and infrared image sensor includes a silicon substrate, MOS transistors formed in the substrate, a stack covering the substrate and including a first photosensitive layer, an electrically-insulating layer, a second photosensitive layer, and color filters. The image sensor further includes electrodes on either side of the first photosensitive layer and delimiting first photodiodes, and electrodes on either side of the second photosensitive layer and delimiting second photodiodes. The first photosensitive layer absorbs the electromagnetic waves of the visible spectrum and of a portion of the infrared spectrum and the second photosensitive layer absorbs the electromagnetic waves of the visible spectrum and gives way to the electromagnetic waves of the portion of the infrared spectrum.

Accuracy of results obtained by integrally processing information acquired by different sensors is improved. A solid-state imaging device according to an embodiment includes: a first sensor that detects light in a first wavelength band; and a second sensor that detects light of a second wavelength band different from the first wavelength band, in which the first sensor includes a first pixel (110) that detects light of the first wavelength band in incident light, and the second sensor includes a second pixel (110) that detects light in the second wavelength band that has transmitted through the first pixel among the incident light.

An image pickup element is constituted by laminating at least a first electrode, an organic photoelectric conversion layer, and a second electrode in order, and the organic photoelectric conversion layer includes a first organic semiconductor material having the following structural formula (1). ##STR00001##

To enable tunable wavelength extraction and detection of a narrow band, while maintaining resolution.

Provided is a signal processing device including: an acquisition unit that acquires a signal of a first wavelength band in which wavelength extraction is possible in a tunable manner by means of postprocessing and a signal of a second wavelength band to be used for a special purpose; and a signal processing unit that performs signal processing using the signal of the first wavelength band and the signal of the second wavelength band.