In one example, an apparatus comprises: a first photodiode configured to convert a first component of light to a first charge, second photodiode configured to convert a second component of the light to a second charge; and an interface circuit configured to: perform a first quantization and a second quantization of the first charge to generate, respectively, a first result and a second result, the first quantization and the second quantization being associated with different light intensity ranges; provide one of the first result or the second result to represent an intensity of the first component of a pixel; perform the first quantization and the second quantization of the second charge to generate, respectively, a third result and a fourth result; and provide one of the third result or the fourth result to represent an intensity of the second component of the pixel.

A dual-band pixel includes a backside passivation layer, a corresponding input terminal coupled to the backside passivation layer, a first n-type layer covering the backside passivation layer, a p-type layer covering the first n-type layer, a second n-type layer within the p-type layer, and a pinning layer covering the second n-type layer. A first or second voltage is applied to the corresponding input terminal to operate the dual-band pixel in a visible or infrared (IR) mode. A depth camera assembly (DCA) may include a sensor pixel array comprising a plurality of dual-band pixels. The DCA may take visible or IR images in a time multiplexed manner using the sensor pixel array and determine depth information based on the captured IR images.

[Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic.

[Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1),

##STR00001## where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R.sub.1 to R.sub.3 each independently represent a substituted or unsubstituted ring structure, and at least one of R.sub.1 to R.sub.3 includes at least one hetero atom in the ring structure.

An image processing apparatus including a processor is provided. The processor inputs, from an imaging element in which first imaging pixels having a lower SNR and second imaging pixels having a higher SNR are arranged on a same layer, a first captured image by the first imaging pixels and a second captured image by the second imaging pixels when the first imaging pixels and the second imaging pixels perform imaging simultaneously, selects a target pixel from the first captured image, extracts, from the second captured image or an interpolated image of the second captured image, pixels having luminance values close to a luminance value of a pixel corresponding to the target pixel in the second captured image or interpolated image, selects pixels corresponding to the extracted pixels from the first captured image, and corrects a luminance value of the target pixel based on luminance values of the selected pixels.

An optical imaging system for a three-dimensional image acquisition apparatus includes an object lens which focuses light, a first image sensor which senses light in a visible light band of the light focused by the object lens, and a second image sensor which senses light in an infrared ray band of light transmitted through the first image sensor. A three-dimensional image acquisition apparatus includes the optical imaging system for a three-dimensional image acquisition apparatus.

An image sensor includes a first sensor pixel and a second sensor pixel that vertically overlap each other. The first sensor pixel includes a first signal generation circuit, and a first photoelectric converter that is connected to the first signal generation circuit and configured to generate first information from light having a first wavelength. The second sensor pixel includes a second signal generation circuit, and a second photoelectric converter that is connected to the second signal generation circuit and configured to generate second information from light having a second wavelength. A first horizontal surface area of the first photoelectric converter is different from a second horizontal surface area of the second photoelectric converter. An image sensor module includes the image sensor, a light source configured to emit light to a target object, and a dual band pass filter configured to selectively pass light reflected from the target object.

Provided are a multicolor photodetector and a method of fabricating the same through integration with a readout integrated circuit. The multicolor photodetector may be fabricated by providing an integrated circuit device in which a readout integrated circuit is wired; forming an assembly in which a first photodetection layer for detecting first wavelength light from incident light and a second photodetection layer for detecting second wavelength light from the incident light on the integrated circuit device; and electrically connecting the first photodetection layer and the second photodetection layer to the readout integrated circuit using connecting members.

[Object] To provide a photoelectric conversion film, a solid-state image sensor, and an electronic device which have an increased imaging characteristic. [Solution] Provided is a photoelectric conversion film including: a subphthalocyanine derivative represented by the following General Formula (1), ##STR00001## where, in General Formula (1), X represents any substituent selected from among the group consisting of a halogen, a hydroxy group, a thiol group, an amino group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted aryloxy group, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkyl amine group, a substituted or unsubstituted aryl amine group, a substituted or unsubstituted alkylthio group and a substituted or unsubstituted arylthio group, R.sub.1 to R.sub.3 each independently represent a substituted or unsubstituted ring structure, and at least one of R.sub.1 to R.sub.3 includes at least one hetero atom in the ring structure.

An image processing apparatus including a processor is provided. The processor inputs, from an imaging element in which first imaging pixels having a lower SNR and second imaging pixels having a higher SNR are arranged on a same layer, a first captured image by the first imaging pixels and a second captured image by the second imaging pixels when the first imaging pixels and the second imaging pixels perform imaging simultaneously, selects a target pixel from the first captured image, extracts, from the second captured image or an interpolated image of the second captured image, pixels having luminance values close to a luminance value of a pixel corresponding to the target pixel in the second captured image or interpolated image, selects pixels corresponding to the extracted pixels from the first captured image, and corrects a luminance value of the target pixel based on luminance values of the selected pixels.

The present disclosure relates to an imaging device, a manufacturing method, a semiconductor device, and an electronic device that can further improve image quality. An imaging device includes a photoelectric conversion unit that receives and photoelectrically converts light, a floating diffusion layer that accumulates charge generated by the photoelectric conversion unit, and a diffusion layer that serves as a source or a drain of a transistor. Then, the floating diffusion layer is formed to have an impurity concentration lower than an impurity concentration of the diffusion layer. In addition, both a first photoelectric conversion unit that is able to accumulate the charge generated by the photoelectric conversion and a second photoelectric conversion unit from which the charge generated by the photoelectric conversion is sequentially taken out and accumulated in the floating diffusion layer are provided as the photoelectric conversion unit in one pixel, and the first photoelectric conversion unit and the second photoelectric conversion unit are arranged in a line in a longitudinal direction along a direction of illumination of light. The present technology can be applied to, for example, a back-illuminated CMOS image sensor.