The present invention relates to an optical biometric sensor comprising: an image sensor comprising an array of photodetectors, wherein for acquiring sensing signals, the image sensor is controllable to sequentially start exposure of subsets of photodetectors; and a timing circuitry configured to control the start of exposure of a subset of photodetectors based on a present data transfer capacity on a data transfer bus configured to transfer data indicative of the acquired sensing signals from the optical biometric sensor to a host device.

One embodiment provides a method for three-dimensional imaging by determining distances of objects within scenes, the method including: emitting a light onto an object within a scene for a predetermined length of time; receiving a plurality of reflections of the light from the object, wherein each of the plurality of reflections is received for a predetermined length of time less than an exposure time for a frame of the scene, wherein the photon detector generates an electrical signal; determining depth location information of at least a portion of the object within the scene corresponding to the given of the electrical signals; and generating, from the depth location information of portions of the object within the scene, a three-dimensional image for the frame of the scene.

A depth sensor for measuring a distance to an object and an image signal processor configured to change a binning mode based on ambient light are provided. A method for operating a depth sensor for measuring a distance to an object includes outputting a pixel signal from at least one depth pixel included in a pixel array, generating ambient light information based on an intensity of ambient light outside the depth sensor, the intensity of the ambient light being measured using the pixel signal, and setting a binning mode of the depth sensor to an analog binning mode or a digital binning mode based on the ambient light parameter value.

Systems and methods are described for registering a fingerprint based on optical fingerprint recognition. A fingerprint recognition window is displayed and a fingerprint frequency of a user fingerprint is analyzed based on reflected light received through the fingerprint recognition window using a fingerprint recognition sensor driven by a pixel binning scheme based on a first binning size. The first binning size may be evaluated based on the fingerprint frequency. If the first binning size is not appropriate for registering the user fingerprint, a second binning size is selected. Fingerprint information of the user fingerprint may be obtained again based on using the fingerprint recognition sensor driven by a pixel binning scheme based on the second binning size.

An imaging device includes a pixel array including pixel circuits arranged into rows and columns. Each bitline of a plurality of bitlines is coupled to a respective column of pixel circuits of the pixel array. The plurality of bitlines is grouped into pairs of bitlines. A plurality of binning circuits is coupled to the plurality of bitlines. Each binning circuit is coupled to a respective pair of bitlines and is responsive to a multi-mode select signal. Each binning circuit is configured to output a binned signal responsive to the first and second bitlines of the respective bitline pair in a first mode. Each binning circuit is configured to output a first signal from a first bitline of the respective bitline pair in a second mode. Each binning circuit is configured to output a second signal from the second bitline of the respective bitline pair in a third mode.

A solid-state imaging device capable of acquiring an RGB image, a CMY image, and luminance information through one imaging process. The solid-state imaging device includes a pixel array portion in which a plurality of pixel unit groups are arrayed, the pixel unit group including pixel units disposed in a 2×2 matrix, the pixel unit including pixels disposed in an 2×2 matrix, and the pixels including a photoelectric conversion unit and a color filter. Each of the pixel unit groups is configured such that an R filter and a C filter are included as the color filters in a first pixel unit among four pixel units constituting the pixel unit group, a G filter and an M filter are included as the color filters in each of second and third pixel units, and a B filter and a Y filter are included as the color filters in a fourth pixel unit.

A solid-state imaging device capable of acquiring an RGB image, a CMY image, and luminance information through one imaging process. The solid-state imaging device includes a pixel array portion in which a plurality of pixel unit groups are arrayed, the pixel unit group including pixel units disposed in a 2×2 matrix, the pixel unit including pixels disposed in an 2×2 matrix, and the pixels including a photoelectric conversion unit and a color filter. Each of the pixel unit groups is configured such that an R filter and a C filter are included as the color filters in a first pixel unit among four pixel units constituting the pixel unit group, a G filter and an M filter are included as the color filters in each of second and third pixel units, and a B filter and a Y filter are included as the color filters in a fourth pixel unit.

A solid-state imaging apparatus includes: an imaging section that acquires image data; and a control section that changes time of reading out the image data in accordance with time of DNN processing on the image data.

A solid-state imaging apparatus includes: an imaging section that acquires image data; and a control section that changes time of reading out the image data in accordance with time of DNN processing on the image data.

An imaging device according to the present disclosure includes a plurality of pixel units each including a first pixel unit and a second pixel unit and a vertical signal line, in which each of the first pixel unit and the second pixel unit includes an amplification transistor, a selection transistor connected between the amplification transistor and the vertical signal line, and a connection unit that selectively connects between a common connection node of the amplification transistor and the selection transistor of the first pixel unit and a common connection node of the amplification transistor and the selection transistor of the second pixel unit.