A solid-state image capturing element includes a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction and a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction. The element includes a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.

A solid-state image capturing element includes a pair of first floating diffusion layers arranged in a direction perpendicular to a predetermined direction and a pair of second floating diffusion layers arranged in the perpendicular direction and adjacent to the pair of first floating diffusion layers in the predetermined direction. The element includes a first connection circuit configured to select at least one of the pair of first floating diffusion layers and to connect the selected first floating diffusion layer to a predetermined first wire; a second connection circuit configured to select at least one of the pair of second floating diffusion layers and to connect the selected second floating diffusion layer to the first wire; and an output circuit configured to output a signal according to an amount of charge of at least one of the pair of first floating diffusion layers or the pair of second floating diffusion layers.

An imaging system includes an image sensor configured to obtain first image data, based on a received light; and a processing circuit configured to determine an operating mode of the image sensor, among a first mode and a second mode, based on an illumination and a dynamic range corresponding to the obtained first image data. The image sensor includes a first sub-pixel configured to sense a target light corresponding to a target color, in the first mode, convert the target light sensed during a first exposure time, into a first signal, and in the second mode, convert the target light sensed during a second exposure time longer than the first exposure time, into a second signal.

Apparatus and methods employing a PDAF optical system are disclosed herein. An example apparatus includes an image sensor comprising a plurality of pixels. The plurality of pixels include a set of pixels configurable to be imaging pixels or focus pixels. The image sensor is configured to generate image data of a scene based on received light at the plurality of pixels. The example apparatus also includes a processor coupled to the image sensor. The processor may be configured to receive first image data of a first frame of the scene, determine at least one region of interest or region of non-interest of the first frame, select, based on the determined at least one region of interest or region of non-interest, a subset of the set of pixels to be focus pixels, and cause the selected subset of the set of pixels to operate as focus pixels.

An image sensor having improved image quality is provided. The image sensor includes a first array of pixels, a second array of pixels, and a binning module. The first array of pixels has a color pattern formed in an n×m array and includes at least first-color pixels, second-color pixels, and third color-pixels. The second array of pixels is adjacent to the first array of pixels and has the same color pattern formed in an n×m array as the first array of pixels, to include at least first-color pixels, second-color pixels, and third color-pixels. The binning module is configured to, for a sensed image: perform binning on the first-color pixels of the first array, the first-color pixels of the second array, the second-color pixels of the first array, and the third-color pixels of the second array, and not perform binning on the third-color pixels of the first array, and not perform binning on the second-color pixels of the second array

A pixel array includes pixel cells disposed in semiconductor material. Each of the pixel cells includes photodiodes, and a floating diffusion to receive image charge from the photodiodes. A source follower is coupled to the floating diffusion to generate an image signal in response image charge from the photodiodes. Drain regions of first and second row select transistors are coupled to a source of the source follower. A common junction is disposed in the semiconductor material between gates of the first and second row select transistors such that the drains of the first and second row select transistors are shared and coupled together through the semiconductor material of the common junction. The pixel cells are organized into a rows and columns with bitlines.

Various aspects of the present disclosure generally relate to a sensor module. In some aspects, an image sensor module may include an array of photon sensors configured to output a first set of signals corresponding to a set of photon sensors of the array of photon sensors. The set of photon sensors may include a row of photon sensors, or a column of photon sensors, of the array of photon sensors. The image sensor module may include a plurality of data selector components configured to receive the first set of signals and output a second set of signals corresponding to a subset of the set of photon sensors.

Solid-state imaging devices are disclosed. In one example, a solid-state imaging device includes detection pixels that each output a luminance change of incident light, a detection circuit that outputs an event signal based on the luminance change, and a first common line connecting the detection pixels to each other. Each of the detection pixels may include a photoelectric conversion element, a logarithmic conversion circuit that outputs a voltage signal corresponding to a logarithmic value of photocurrent from the photoelectric conversion element, a first circuit that outputs a luminance change of incident light based on the voltage signal, a first transistor connected between the photoelectric conversion element and the logarithmic conversion circuit, and a second transistor connected between the photoelectric conversion element and the first common line. The detection circuit includes a second circuit that outputs the event signal based on the luminance change output from each of the detection pixels.

A radiation imaging apparatus comprises a readout unit and a gain map generation unit. The readout unit repetitively outputs the image data a plurality of times during a period in which radiation irradiation is performed for generating the gain map data. The gain map generation unit collects a plurality of image data output from the readout unit, and in response to stop of the radiation irradiation, generates the gain map data based on the plurality of image data except at least finally collected image data in the plurality of collected image data.

Disclosed is an image sensing device and an operating method thereof, the image sensing device including an image sensor suitable for generating first image signals, corresponding to some of a plurality of pixels, in a binning mode, and an image processor suitable for generating second image signals, corresponding to other pixels, by performing an interpolation operation based on the first image signals in the binning mode.