Provided are a solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus capable not only of having advanced global shutter and autofocus functions but also of sufficiently achieving single exposure high dynamic range (SEHDR) performance, thereby substantially realizing enhanced dynamic range and frame rate.

In an image capturing mode, a reading part controls driving of a conversion signal reading part such that the conversion signal reading part keeps first and second transfer transistors in a conduction state in the same transfer period and performs a read-out operation on a pixel signal corresponding to a sum of charges stored in a first photodiode and charges stored in a second photodiode with a first conversion gain and subsequently with a second conversion gain.

Apparatus for binning an input value into an array of bins, each bin representing a range of input values and the bins collectively representing a histogram of input values, the apparatus comprising: an input for receiving the input value; a memory for storing the array; and a binning controller configured to: derive a plurality of bin values from the input value according to a binning distribution located about the input value, the binning distribution spanning a range of input values and each bin value having a respective input value dependent on the position of the bin value in the binning distribution; and allocate the plurality of bin values to a plurality of bins in the array, each bin value being allocated to a bin selected according to the respective input value of the bin value.

Apparatus for binning an input value into an array of bins, each bin representing a range of input values and the bins collectively representing a histogram of input values, the apparatus comprising: an input for receiving the input value; a memory for storing the array; and a binning controller configured to: derive a plurality of bin values from the input value according to a binning distribution located about the input value, the binning distribution spanning a range of input values and each bin value having a respective input value dependent on the position of the bin value in the binning distribution; and allocate the plurality of bin values to a plurality of bins in the array, each bin value being allocated to a bin selected according to the respective input value of the bin value.

An image capturing system includes a light source configured to emit light toward an object or scene that is to be imaged. The system also includes a time-of-flight image sensor configured to receive light signals based on reflected light from the object or scene. The system also includes a processor operatively coupled to the light source and the time-of-flight image sensor. The processor is configured to perform compressive sensing of the received light signals. The processor is also configured to generate an image of the object or scene based at least in part on the compressive sensing of the received light signals.

In a solid-state imaging element that performs AD conversion for each pixel, image quality degradation when resolution is lowered is suppressed without wastefully consuming power. The solid-state imaging element includes a plurality of pixels. Each of the plurality of pixels is provided with a comparison unit, an addition circuit, and a data storage unit. The comparison unit generates a difference signal obtained by amplifying a difference between an analog pixel signal to which a predetermined coordinate is assigned and a predetermined reference signal. The addition circuit generates an addition signal by performing analog addition of the difference signal and a difference signal regarding another coordinate adjacent to the predetermined coordinate. The data storage unit holds a digital signal indicating a time when an output signal of the comparison unit corresponding to the addition signal is inverted.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

Provided is a radiographic imaging device including: a first hardware processor; a sensor that includes multiple semiconductor elements arranged two-dimensionally and multiple switch elements respectively connected to the semiconductor elements; a gate driver that causes each of the switch elements of the sensor to switch between a conductive state and non-conductive state so as to release charge from each of the semiconductor elements; and a reader that performs readout of a signal value according to an amount of the charge released by the each of the semiconductor elements of the sensor. The first hardware processor sets an imaging condition that affects a dose of radiation reaching the sensor, selects a gate readout pattern according to the set imaging condition among different gate readout patterns, and drives the gate driver and the reader using the selected gate readout pattern.

An image pickup apparatus includes an image sensor including a plurality of normal pixels and OB pixels obtained by dividing each pixel into n, and an image processing circuit. The image sensor can read each pixel row in a first read mode in which a pixel signal is generated and read or in a second read mode in which n signals relating to n divided pixel signals are read in n rows. The image processing circuit performs processing on signals read in the first and second read modes to generate image data and performs OB level correction processing on a normal pixel signal read from the normal pixels in the second read mode using an OB pixel signal read from the OB pixels in the first and second read modes.

An image sensor includes a plurality of pixels that is arranged in a matrix and each of which outputs a signal in response to incident light, wherein readout of data can be performed with respect to the plurality of pixels, and simultaneous readout of data of a plurality of columns of pixels can be performed, and at least one pixel of the plurality of columns of pixels to be read simultaneously can be read for phase detection with respect to each of divided sub-pixels. The image sensor is configured to, with n rows as a readout unit where n is an integer of 2 or more, perform readout for at least one sub-pixel of at least one pixel in one readout cycle within the readout unit, perform readout for each pixel including phase detection readout for the other sub-pixel of the at least one pixel in which the at least one sub-pixel has been read in the one readout cycle, in another readout cycle within the readout unit, and end the readout for the readout unit with the n+1 readout cycles.