The present invention is applied to an image pickup apparatus for which, for example, a CMOS solid-state image pickup element is used. One screen image is divided into a plurality of blocks, and a motion is detected for each of the blocks to control the exposure time of the block.

An image capturing control apparatus includes a control unit and a plurality of image processing units. The control unit is configured to perform a read-out control of an image capturing unit such that image signals are read out in parallel, the image signals generated under different image capturing conditions for every pixel line group of a plurality of pixel lines of the image capturing unit. The plurality of image processing units are configured to process the image signals read out from the image capturing unit.

A semiconductor device obtains highly accurate image data regardless of the intensity of incident light. The semiconductor device includes a first photo sensor provided in a pixel, a second photo sensor provided around the pixel, and a controller for setting the drive condition of the first photo sensor in accordance with the intensity of outside light obtained by the second photo sensor. An image is taken after the sensitivity of the first photo sensor is changed in accordance with the drive condition set by the controller. Thus, in the semiconductor device, an image can be taken using the first photo sensor whose sensitivity is optimized in accordance with the intensity of incident light.

An electronic device is provided. The electronic device includes an image sensor including a plurality of unit pixels, each unit pixel including two or more individual pixels, and at least one processor. The at least one processor is configured to acquire a first image frame from the image sensor, determine a photographing environment of the electronic device, based on the first image frame, and, in response to the photographing environment corresponding to a first photographing environment, control the image sensor to acquire analog data through the individual pixels, and provide first digital data digitally converted from the analog data with first sensitivity, and second digital data digitally converted from the analog data with second sensitivity which is higher than the first sensitivity, and acquire a second image frame which follows the first image frame, based on the first digital data and the second digital data.

An image sensor includes a photoelectric converter configured to convert received light into charges in response to the received light and provide the charges to a first node, a transfer transistor configured to provide a voltage of the first node to a floating diffusion node, a reset transistor configured to reset a voltage of the floating diffusion node to a driving voltage based on a reset signal, a source follower transistor configured to provide a unit pixel output based on the voltage of the floating diffusion node, a select transistor connected to the source follower transistor and gated with a selection signal to output the unit pixel output to the outside, and a ferroelectric capacitor connected to the floating diffusion node, wherein the ferroelectric capacitor is configured to adjust a conversion gain of the floating diffusion node based on a conversion gain mode of the ferroelectric capacitor, the conversion gain mode being a first conversion gain mode, a second conversion gain mode, or a third conversion gain mode.

An apparatus having a rectangular imaging array characterized by a plurality of pixel sensors and a plurality of readout lines is disclosed. The apparatus has a plurality of column processing circuits, each column processing circuit being connected to a corresponding one of the readout lines and a plurality of signal injectors, one signal injector being connected to each of the readout lines. Each signal injector causes one of a predetermined number of voltages to be coupled to that readout line. An exposure for each of the pixel sensors is determined during image recording periods. The signal injectors inject a plurality of calibration voltages into the readout lines during calibration periods, and determines a gain function of an amplifier in one of the column processing circuits by measuring an output of the amplifier for the plurality of calibration voltages, the calibration period is between the imaging recording periods.

A solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus capable of suppressing occurrence of motion distortion while realizing widening of dynamic range and in turn realizing a higher image quality are provided. Each pixel includes a photo diode PD which accumulates a charge generated by photo-electric conversion in an accumulation period, a transfer transistor capable of transferring the accumulated charge in a transfer period, a floating diffusion FD to which the charge accumulated in the photo diode PD is transferred, a source-follower transistor which converts the charge of the floating diffusion FD to a voltage signal in accordance with the charge quantity, and a capacity changing portion capable of changing the capacity of the floating diffusion FD in accordance with a capacity changing signal, the capacity of the floating diffusion FD being changed by the capacity changing portion in a predetermined period in one readout period with respect to the accumulation period and a conversion gain being switched in this one readout period.

A solid-state imaging device, a method for driving the solid-state imaging device, and an electronic apparatus capable of suppressing occurrence of motion distortion while realizing widening of dynamic range and in turn realizing a higher image quality are provided. Each pixel includes a photo diode PD which accumulates a charge generated by photo-electric conversion in an accumulation period, a transfer transistor capable of transferring the accumulated charge in a transfer period, a floating diffusion FD to which the charge accumulated in the photo diode PD is transferred, a source-follower transistor which converts the charge of the floating diffusion FD to a voltage signal in accordance with the charge quantity, and a capacity changing portion capable of changing the capacity of the floating diffusion FD in accordance with a capacity changing signal, the capacity of the floating diffusion FD being changed by the capacity changing portion in a predetermined period in one readout period with respect to the accumulation period and a conversion gain being switched in this one readout period.

An image capture device that includes an adjustment circuit configured to monitor image parameters, generate updated image settings for the image capture device in response to the monitored image parameters, and transmit the updated image settings to one or more processors. The updated image settings configure the one or more processors to determine whether to transition the image capture device from a dynamic scene mode to a static scene mode based on a first image parameter included in the monitored image parameters, wherein the first image parameter is different from a second image parameter used to determine to transition the image capture device from the static scene mode to the dynamic scene mode, and to suspend generation of all or less than all of the updated image settings in response to determining to transition the image capture device from the dynamic scene mode to the static scene mode.

A solid-state imaging device and a method therefore capable of suppressing occurrence of motion distortion are provided. Each pixel includes a photo diode PD which accumulates a charge generated by photo-electric conversion in an accumulation period, a transfer transistor capable of transferring the accumulated charge in a transfer period, a floating diffusion FD to which the charge accumulated in the photo diode PD is transferred, a source-follower transistor which converts the charge of the floating diffusion FD to a voltage signal in accordance with the charge quantity, and a capacity changing portion capable of changing the capacity of the floating diffusion FD in accordance with a capacity changing signal, the capacity of the floating diffusion FD being changed by the capacity changing portion in a predetermined period in one readout period with respect to the accumulation period and a conversion gain being switched in this one readout period.