An image processing apparatus includes a saturated region detection unit, a dynamic range control unit, and a shutter control unit. The saturated region detection unit acquires imaging data from an infrared imaging device that captures a thermal image of an outside of a mobile body, and detects that a saturated pixel is present in the imaging data. The dynamic range control unit sets, in accordance with a result of the detection of the saturated region, a dynamic range of the infrared imaging device to a first temperature range, or a second temperature range where a temperature at least on an upper limit side is higher than that in the first temperature range. The shutter control unit controls opening and closing of a shutter for protecting the infrared imaging device based on the result of the detection of the saturated region and the setting of the dynamic range.

The embodiments of the present disclosure disclose data simulation method and device for event camera. A specific embodiment of the method includes: decoding the video to be processed to obtain a video frame sequence; inputting a target video frame to a fully convolutional network UNet to obtain event camera contrast threshold distribution information; sampling each pixel in the target video frame to obtain an event camera contrast threshold set; performing processing on the event camera contrast threshold set and the video frame sequence, to obtain the simulated event camera data; performing generative adversarial learning on the simulated event camera data and event camera shooting data, to obtain updated event camera contrast threshold distribution information; generating simulated event camera data. The present disclosure is a computer vision system that can be widely applied to such fields as national defense and military, film and television production, public security, and etc.

An image processing device is disclosed. The image processing device includes at least one first pixel having a first sensitivity, a second pixel having a second sensitivity different from the first sensitivity, a processor, and a synthesizer. The processor calculates a sampling position of the at least one first pixel and a sampling position of the second pixel, determines a reference position and adjusts the sampling position of the at least one first pixel or the second pixel based on the reference position.

An image pickup device according to an embodiment includes pixels each configured to output an analog signal based on electric charges produced in a photoelectric conversion unit and a control unit configured to control a gain applied to the analog signal to be at least a first gain and a second gain greater than the first gain in accordance with a signal value of the analog signal. Each of the pixels outputs, as the analog signal, a first signal and a second signal based on electric charges produced in the photoelectric conversion unit in a first exposure period and a second exposure period shorter than the first exposure period. The control unit controls the gain applied to the analog signal by selecting one from the first gain and the second gain in accordance with the signal value, for at least one of the first signal and the second signal.

An imaging device includes a pixel array with a plurality of pixels each configured to generate a reset signal and an image signal, a sampling circuit including a plurality of samplers connected to column lines, where each sampler generates a first comparison signal by comparing the reset signal with a ramp signal and generates a second comparison signal by comparing the image signal with the ramp signal. An ADC converts each of the first and second comparison signals into a digital signal. Each sampler performs an auto-zero operation for initializing itself before performing the comparing with respect to the reset signal in a first mode, and performs a respective auto-zero operation before performing the comparing for each of the reset signal and the image signal in a second mode.

The present technology relates to a solid-state imaging element and electronic equipment that allow an increase in the signal charge amount Qs that each pixel can accumulate. A solid-state imaging element according to the first aspect of the present technology includes: a photoelectric conversion section formed in each pixel; and an inter-pixel separation section separating the photoelectric conversion section of each pixel, in which the inter-pixel separation section includes a protruding section having a shape protruding toward the photoelectric conversion section. The present technology can be applied to a back-illuminated CMOS image sensor, for example.

An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.

An imaging device that includes a semiconductor substrate; a first photoelectric converter that is located in the semiconductor substrate and that generates a first signal charge by photoelectric conversion; a first node to which the first signal charge is input; a capacitor having a first terminal coupled to the first node; a second photoelectric converter that is located in the semiconductor substrate and that generates a second signal charge by photoelectric conversion; a second node to which the second signal charge is input; a transistor having a gate coupled to the second node; and a switch element coupled between the first node and the second node, where a number of saturation charges of a first imaging cell including the first photoelectric converter and the capacitor is greater than a number of saturation charges of a second imaging cell including the second photoelectric converter.

An image sensor includes ADCs, each including a comparator receiving a ramp signal and an image signal, and generating a comparator output. Each ADC also includes a counter ceasing to change a digital count value in response to a change in the comparator output. The digital count value has a first resolution. Each ADC also includes a delay line circuit including a delay line generating a first digital value encoding a duration of a period of the counter clock and generating a second digital value encoding a first portion of the period of the counter clock. Each ADC also includes a delay to digital circuit generating a digital output value based on the first and digital values. The digital output value encodes a second value of the ramp signal, where the digital count value has a second resolution that is greater than the first resolution.

A CMOS image sensor with an imaging array of pixels containing selected pixels wherein illumination is blocked and light scattered from an adjacent pixel is collected. The signal from the selected pixels is resilient against saturation and thereby contributes to increased dynamic range of the imaging signal. The image sensor may be incorporated within a digital camera.