An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.

A photoelectric conversion device includes a pixel unit having pixels arranged to form rows and columns, each including a transfer transistor that transfers charge in a photoelectric converter to an output unit, and a pixel control unit that controls the pixels. The pixel control unit is configured to supply a control signal in accordance with an exposure period individually defined for pixel blocks of the pixel unit to pixels of each pixel block and read out, from each pixel, a first signal obtained when the photoelectric converter is in a reset state and a second signal based on charge accumulated in the photoelectric converter during the exposure period. A period excluding both the exposure period and a readout period of the second signal corresponds to a reset period of the photoelectric converter. The transfer transistor is off in a readout period of the first and second signals.

An imaging element includes a first substrate provided with a photoelectric conversion unit configured to generate electric charges by photoelectric conversion and a signal line to which a signal based on the electric charges generated by the photoelectric conversion unit is output and a second substrate provided with a supply unit configured to supply a voltage to the signal line so that a voltage of the signal line does not fall below a predetermined voltage and a processing unit configured to process a signal output to the signal line, the second substrate being stacked on the first substrate.

A radiation imaging apparatus executes a correction value determination operation of reading out a signal from a pixel once or more in a state where radiation is not emitted onto the apparatus, and determining a correction value that is based on the signal read out from the pixel, and a radiation dose determination operation of reading out a signal from the pixel while radiation is emitted, and determining a dose of radiation that is being emitted, using a value of the signal read out from the pixel and the correction value. The apparatus executes the correction value determination operation and executes the radiation dose determination operation using the correction value in a case where it is determined that the correction value determination operation is to be executed, and otherwise executes the radiation dose determination operation without executing the correction value determination operation.

Techniques are described for sampled bandgap reference generation for CMOS image sensor (CIS) applications. For example, the CIS includes a pixel array, one or more pixel analog to digital converters (ADCs), and a sampled bandgap reference generator, all integrated in close proximity on a chip. The ADCs rely on stable reference levels from the bandgap reference generator for performing pixel conversions for the pixel array. Embodiments of the sampled bandgap reference generator can operate according to reference generation cycles. Each cycle can include a first portion, in which an active core dynamically stabilizes the bandgap reference level; and a second portion, in which the core is deactivated, and the bandgap reference level is output based on a sampled level obtained during the preceding first portion of the cycle. The cycle timing can be controlled to achieve sufficient dynamic stabilization of the reference levels, while mitigating photon emissions from the core.

An analogue to digital converter is provided for digital imaging devices, in which a pixel column is sampled by a respective capacitor.

In a reset phase of operation, each pixel in the row under consideration is reset, and an operational amplifier operating in a voltage follower mode is coupled to all the sampling capacitors in parallel to obtain the reset values of the pixels sensors of that row, and the in an imaging phase of operation, the inverting input of the operational amplifier operating in a comparator mode is coupled to each capacitor in turn after activating the respective pixel sensor, while exposing the non inverting signal to an analog ramp reference voltage so that the timing of the toggling of the operational amplifier reflects the value of the pixel under consideration, corrected for the reset value.

An analog-to-digital conversion circuit includes a convertor configured to perform a first comparison operation for sensing a noise based on a reset signal and to perform a second comparison operation for sensing raw data to output data which is obtained by removing the noise from the raw data, and a ramp voltage generator configured to generate a ramp voltage used for the first comparison operation and the second comparison operation and to output the ramp voltage to the convertor. The ramp voltage generator includes a first current source for supplying a bias current for generating the ramp voltage in response to a first control signal, a second current source for supplying a boost current for generating the ramp voltage in response to a second control signal, and a generation circuit for generating the ramp voltage based on the bias current and the boost current.

An analog-to-digital conversion circuit includes a convertor configured to perform a first comparison operation for sensing a noise based on a reset signal and to perform a second comparison operation for sensing raw data to output data which is obtained by removing the noise from the raw data, and a ramp voltage generator configured to generate a ramp voltage used for the first comparison operation and the second comparison operation and to output the ramp voltage to the convertor. The ramp voltage generator includes a first current source for supplying a bias current for generating the ramp voltage in response to a first control signal, a second current source for supplying a boost current for generating the ramp voltage in response to a second control signal, and a generation circuit for generating the ramp voltage based on the bias current and the boost current.

The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.

The present technology relates to a solid-state imaging device that can improve imaging quality by reducing variation in the voltage of a charge retention unit, a method of driving the solid-state imaging device, and an electronic apparatus. A first photoelectric conversion unit generates and accumulates signal charge by receiving light that has entered a pixel, and photoelectrically converting the light. A first charge retention unit retains the generated signal charge. A first output transistor outputs the signal charge in the first charge retention unit as a pixel signal, when the pixel is selected by the first select transistor. A first voltage control transistor controls the voltage of the output end of the first output transistor. The present technology can be applied to pixels in solid-state imaging devices, for example.