An imaging device having a pixel including a photoelectric converter that converts incident light into charges, and a reset transistor having a first source, a first drain and a first gate, one of the first source and the first drain coupled to the photoelectric converter. The imaging device further including first voltage generating circuity that generates a first voltage; second voltage generating circuity that generates a second voltage, the second voltage generating circuity being different from the first voltage generating circuity; and first switching circuity that causes either the first voltage generating circuity or the second voltage generating circuity to selectively couple to the other of the first source and the first drain of the reset transistor.

In various exemplary embodiments, optically sensitive devices comprise a plurality of pixel regions. Each pixel region includes an optically sensitive layer over a substrate and has subpixel regions for separate wavebands. A pixel circuit comprises a charge store and a read out circuit for each subpixel region. Circuitry is configured to select a plurality of subpixel elements from different pixels that correspond to the same waveband for simultaneous reading to a shared read out circuit.

An image sensor having improved signal-to-noise ratio and reduced random noise and an image processing system are provided. The image sensor includes a pixel array including a pixel connected to a column line and configured to provide an analog pixel signal to the column line in response to at least one row control signal, and an analog-to-digital converter (ADC) that receives and converts the analog pixel signal into a corresponding digital pixel signal. The pixel includes a group of sub-pixels simultaneously selected by the at least one row control signal, such that each one of the sub-pixels in the group of sub-pixels provides a sub-pixel signal, and the analog pixel signal is an average of the sub-pixel signals provided by the group of sub-pixels.

The present technology relates to an imaging element and a driving method, and an electronic device that enable stable driving with low voltage and low power consumption and furthermore make it possible to ensure a time resolution of detection. A light detector includes a pixel array section including a plurality of first pixels and a second pixel. The first pixel includes a photoelectric conversion section that photoelectrically converts incident light, a floating diffusion section that generates a voltage in accordance with the amount of charge carriers obtained by photoelectric conversion, and a transfer section that transfers charge carriers from the photoelectric conversion section to the floating diffusion section; the readout of a signal is performed intermittently from the first pixel. Further, the output of the second pixel is monitored continuously to detect the incidence of light. The present technology can be applied to a radiation counter.

An imaging device includes: a semiconductor substrate; pixels arranged two-dimensionally along row and column directions on the substrate; and one or more interconnection layers located on the semiconductor substrate, including a first signal line extending along the column direction and a second signal line to which a multi-level signal is applied. A first pixel includes: a photoelectric converter; a charge storage region; a first interconnection electrically connected to the charge storage region; and a first transistor that includes a first diffusion layer electrically connected to the first signal line and a second diffusion layer electrically connected to the second signal line and that outputs a signal to the first signal line. The first and second signal lines and the first interconnection are arranged in a first interconnection layer. The second signal line is located between the first interconnection and the first signal line, viewed perpendicularly to the substrate.

The present technique relates to a solid-state imaging device, a solid-state imaging device manufacturing method, and an electronic apparatus that are capable of providing a solid-state imaging device that can prevent generation of RTS noise due to miniaturization of amplifying transistors, and can achieve a smaller size and a higher degree of integration accordingly.

A solid-state imaging device (1-1) includes: a photodiode (PD) as a photoelectric conversion unit; a transfer gate (TG) that reads out charges from the photodiode (PD); a floating diffusion (FD) from which the charges of the photodiode (PD) are read by an operation of the transfer gate (TG); and an amplifying transistor (Tr3) connected to the floating diffusion (FD). More particularly, the amplifying transistor (Tr3) is of a fully-depleted type. Such an amplifying transistor includes an amplifier gate (AG) (gate electrode) extending in a direction perpendicular to convex strips (33) formed by processing a surface layer of a semiconductor layer (11), for example.

At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

The present technology relates to an optical pulse detection device, an optical pulse detection method, a radiation counter device, and a biological testing device which are capable of performing radiation counting in a more accurate manner. The optical pulse detection device includes a pixel array unit in which a plurality of pixels are arranged in a two-dimensional lattice shape, an AD converter that converts output signals of each of the pixels in the pixel array unit into digital values with gradation greater than 1 bit, and an output control circuit that performs error determination processing of comparing the digital value with a predetermined threshold value, and discarding a digital value, which is greater than the threshold value, among the digital values as an error. For example, the present technology is applicable to a radiation counter device, and the like.

An imaging array having a plurality of pixel sensors connected to a bit line is disclosed. Each pixel sensor includes a first photodetector having a photodiode, a floating diffusion node, and an amplifier. The floating diffusion node is characterized by a parasitic photodiode and parasitic capacitance. The amplifier amplifies a voltage on the floating diffusion node to produce a signal on an amplifier output. The first photodetector also includes a bit line gate that connects the amplifier output to the bit line in response to a row select signal and a voltage dividing capacitor having a first terminal connected to the floating diffusion node and a second terminal connected to a drive source that switches a voltage on the second terminal between a drive potential different from ground and ground in response to a drive control signal.

A solid-state imaging device includes: a plurality of pixel circuits arranged in rows and columns; a plurality of unit power supply circuits that generate a second power supply voltage from a first power supply voltage based on a reference voltage and supply the second power supply voltage to amplifier transistors provided in the plurality of pixel circuits; and a regulator circuit that generates the reference voltage that is constant. Each of the unit power supply circuits is provided for a corresponding one of the columns of the plurality of pixel circuits or for a corresponding one of the pixel circuits, and supplies the second power supply voltage to the amplifier transistors in the pixel circuits that belong to the corresponding one of the columns or to the amplifier transistor in the corresponding one of the pixel circuits.