Provided is a photoelectric conversion device including: a pixel array including pixels arranged to form columns; and a readout unit including column readout circuits provided corresponding to the columns, each of the column readout circuits being configured to read out signals from the pixels in a corresponding column. Each of the column readout circuits includes a holding unit configured to hold a reference voltage supplied from a reference voltage line, an amplifier unit configured to amplify a signal output from one of the pixels based on the reference voltage held in the holding unit, and a switch unit configured to electrically disconnect the reference voltage line from the holding unit when the amplifier unit amplifies the signal. The holding unit of a first column readout circuit and the holding unit of a second column readout circuit are electrically connected to each other by a path other than the switch unit.

The present technology relates to an imaging element, a processing method, and an electronic device which are capable of reducing deterioration in an image quality of a captured image caused by power fluctuation. A counting unit includes a counting operation unit that performs a counting operation of counting the count value and a dummy operation unit that performs a dummy counting operation at a timing complementary to the counting operation of the counting operation unit. The present technology can be applied to, for example, an imaging element that counts a count value and performs AD conversion.

The present technology relates to a solid-state imaging device, an electronic apparatus, and an AD converter that are capable of suppressing the occurrence of an error in AD conversion results.

The solid-state imaging device includes a pixel section having a plurality of pixels, a comparator for comparing a pixel signal outputted from the pixels with a reference signal, and a counter for counting the time of comparison made by the comparator. The comparator includes a first amplifier for comparing the pixel signal with the reference signal, a second amplifier that has a first transistor and amplifies an output signal of the first amplifier, and a second transistor having the same polarity as the first transistor. A gate of the second transistor is connected to an output end of the first amplifier, and a source and a drain of the second transistor are connected to the same fixed potential as a source of the first transistor. The present technology is applicable, for example, to a CMOS image sensor.

An image sensing device includes a pixel array including a photoconverter configured to convert optical signals into analog electrical signals, an analog-digital converting (ADC) circuit configured to convert the analog electrical signals received from the pixel array into digital signals, an address bus, a random number generator configured to generate random numbers based on an input of least significant bits (LSBs) of a plurality of digital signals transmitted from the ADC circuit through the address bus, and a signal processor configured to perform image processing using the random numbers.

An image sensing device includes a pixel array including a photoconverter configured to convert optical signals into analog electrical signals, an analog-digital converting (ADC) circuit configured to convert the analog electrical signals received from the pixel array into digital signals, an address bus, a random number generator configured to generate random numbers based on an input of least significant bits (LSBs) of a plurality of digital signals transmitted from the ADC circuit through the address bus, and a signal processor configured to perform image processing using the random numbers.

Techniques are disclosed for imager health monitoring systems and methods. In one example, a method includes determining a characteristic of an active unit cell of a focal plane array (FPA) and/or a reference unit cell of the FPA. The active unit cell includes a detector selectively shielded from an incident scene. The reference unit cell includes a reference detector shielded from the incident scene. The method further includes determining a state of the FPA based at least in part on the characteristic. The method further includes transmitting an indication of the state of the FPA to selectively cause adjustment of the FPA Related devices and systems are also provided.

A photon counting device includes: a plurality of pixels each including a photoelectric conversion element and an amplifier amplifying charge to which input light is converted by the photoelectric conversion element and converting the amplified charge to a voltage; an A/D converter converting a voltage output from the amplifier of each of the plurality of pixels to a digital value; a first derivation unit configured to derive a provisional value of photon number in each of the plurality of pixels based on the digital value; and a second derivation unit configured to derive a confirmed value of photon number in a target pixel based on a first probability associated with a photon number distribution and a second probability associated with reading noise.

A photon counting device includes: a plurality of pixels each including a photoelectric conversion element and an amplifier amplifying charge to which input light is converted by the photoelectric conversion element and converting the amplified charge to a voltage; an A/D converter converting a voltage output from the amplifier of each of the plurality of pixels to a digital value; a first derivation unit configured to derive a provisional value of photon number in each of the plurality of pixels based on the digital value; and a second derivation unit configured to derive a confirmed value of photon number in a target pixel based on a first probability associated with a photon number distribution and a second probability associated with reading noise.

Imaging devices and electronic apparatuses with one or more shared pixel structures are provided. The shared pixel structure includes a plurality of photoelectric conversion devices or photodiodes. Each photodiode in the shared pixel structure is located within a rectangular area. The shared pixel structure also includes a plurality of shared transistors. The shared transistors in the shared pixel structure are located adjacent the photoelectric conversion devices of the shared pixel structure. The rectangular area can have two short sides and two long sides, with the shared transistors located along one of the long sides. In addition, a length of one or more of the transistors can be extended in a direction parallel to the long side of the rectangular area.

Various embodiments of the present technology may provide methods and apparatus for a track-and-hold amplifier configured to sample and amplify an analog signal. Methods and apparatus for a track-and-hold amplifier according to various aspects of the present invention may provide an isolation circuit configured to isolate transient current in a track-and-hold capacitor during a track phase. According to various embodiments, selective activation of the isolation circuit provides a settling time that is independent of the gain of the amplifier.