Disclosed is an electronic device which includes a processing block, a crosstalk compensation block, and a dark level compensation block. The processing block receives image data from an active pixel region of an image sensor and performs pre-processing on the image data. The crosstalk compensation block performs crosstalk compensation on the pre-processed image data. The dark level compensation block performs the crosstalk compensation on dark level data received from an optical black region of the image sensor and performs a subtraction operation on the crosstalk-compensated image data and the crosstalk-compensated dark level data.

A method of calibrating an image sensor includes obtaining a plurality of multi-light source images generated from a plurality of image sensor modules, wherein each of the plurality of image sensor modules generates at least three multi-light source images; obtaining, based on the plurality of multi-light source images, a plurality of crosstalk levels and a plurality of color-specific correction coefficients; generating modeling data based on a relationship between a crosstalk level for a first color and the plurality of color-specific correction coefficients; and obtaining, based on a single light source image captured by a first image sensor module and the modeling data, a color-specific correction coefficient for a target pixel of an image sensor, the image sensor being provided in the first image sensor module, and the color-specific correction coefficient being usable for correcting a crosstalk of the target pixel.

When a time at which a first pulsed light starts arriving at pixels after being reflected by an object is a first time, a time at which the first pulsed light finishes arriving at the pixels is a second time, and a time at which a second pulsed light starts arriving at the pixels after being reflected by the object is a third time, a control circuit decreases sensitivity of the pixels in first part of a first period from the first time including the second time, to a level lower than the sensitivity of the pixels in at least part of a second period after the first period and up to the third time, and increases the sensitivity of the pixels in second part of the first period, to a level higher than the sensitivity of the pixels in the at least part of the second period.

Various techniques are provided for implementing, operating, and manufacturing infrared imaging devices using integrated circuits. In one example, a system includes a focal plane array (FPA) integrated circuit comprising an array of infrared sensors adapted to image a scene, a plurality of active circuit components, a first metal layer disposed above and connected to the circuit components, a second metal layer disposed above the first metal layer and connected to the first metal layer, and a third metal layer disposed above the second metal layer and below the infrared sensors. The third metal layer is connected to the second metal layer and the infrared sensors. The first, second, and third metal layers are the only metal layers of the FPA between the infrared sensors and the circuit components. The first, second, and third metal layers are adapted to route signals between the circuit components and the infrared sensors.

A device, for pixel transfer rate boosting, is provided and includes an image sensing array having a plurality of pixel units, in which each of the plurality of pixel units is configured to generate a pixel signal when receiving an electromagnetic energy, a signal buffer circuit, electrically coupled with the image sensing array to receive the pixel signals, a switch circuit electrically coupled with the signal buffer circuit, a capacitor having a first terminal and a second terminal, in which the first terminal electrically couples with the switch circuit and the second terminal connects to a ground, a comparator, electrically coupled with the switch circuit, and a pull-down unit, electrically coupled with the first terminal of the capacitor and the switch circuit. After the switch circuit is turned on, the pull-down unit pulls the plurality of pixel output signals down.

An image sensor includes: a pixel array including pixels and reference pixels; an analog sensing circuit configured to sense signals from the pixels and the reference pixels; and a digital logic circuit configured to receive the sensed signals from the analog sensing circuit and configured to compensate signals corresponding to the pixels from among the sensed signals by using signals corresponding to the reference pixels from among the sensed signals, wherein each of the reference pixels is at least partially surround by the pixels.

An image sensor includes: a pixel array including pixels and reference pixels; an analog sensing circuit configured to sense signals from the pixels and the reference pixels; and a digital logic circuit configured to receive the sensed signals from the analog sensing circuit and configured to compensate signals corresponding to the pixels from among the sensed signals by using signals corresponding to the reference pixels from among the sensed signals, wherein each of the reference pixels is at least partially surround by the pixels.

An imaging device including a semiconductor substrate that includes a first impurity region; a photoelectric converter that is coupled to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal coupled to the first impurity region; voltage supply circuitry coupled to the second terminal; a first transistor including the first impurity region as a source or a drain; and control circuitry. The control circuitry is programmed to cause the voltage supply circuitry to supply a first voltage in a first period, and to cause the voltage supply circuitry to supply a second voltage different from the first voltage in a second period continuous to the first period, the first transistor being in on-state in the first period, the first transistor being in off-state in the second period.

An imaging device including a semiconductor substrate that includes a first impurity region; a photoelectric converter that is coupled to the first impurity region and that converts light into charges; a capacitor that includes a first terminal and a second terminal, the first terminal coupled to the first impurity region; voltage supply circuitry coupled to the second terminal; a first transistor including the first impurity region as a source or a drain; and control circuitry. The control circuitry is programmed to cause the voltage supply circuitry to supply a first voltage in a first period, and to cause the voltage supply circuitry to supply a second voltage different from the first voltage in a second period continuous to the first period, the first transistor being in on-state in the first period, the first transistor being in off-state in the second period.

An imaging device includes a plurality of pixels two-dimensionally disposed. At least part of the plurality of pixels includes a first photoelectric conversion unit and a second photoelectric conversion unit provided in a semiconductor substrate and each including a first semiconductor region of a first conductivity type for accumulating a signal charge, a first isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion unit and including a second semiconductor region forming a first potential barrier for the signal charge in the first semiconductor region, and a second isolation region provided in the semiconductor substrate between the first photoelectric conversion unit and the second photoelectric conversion units and including a trench isolation forming a second potential barrier higher than the first potential barrier for the signal charge in the first semiconductor region.