The present disclosure relates to an imaging device, a method for manufacturing an imaging device, and an electronic device capable of reducing light entering an electric-charge holding unit in a back-illuminated imaging device. An imaging device includes: a photoelectric conversion unit; an electric-charge holding unit; a semiconductor substrate; a wiring layer; an insulation film layer; a first light-shielding film; and a second light-shielding film. The insulation film layer, the first light-shielding film, and the wiring layer are stacked on a second surface of the semiconductor substrate. The second light-shielding film includes: a first light-shielding portion extending from the first surface of the semiconductor substrate to a middle of the semiconductor substrate; a second light-shielding portion penetrating the semiconductor substrate; and a third light-shielding portion covering a part of the first surface of the semiconductor substrate. The present technology is applicable to a CMOS image sensor, for example.

An image sensor including a substrate, a trench isolation, a plurality of image sensing units, at least one phase detection unit, and an interconnection layer is provided. The trench isolation is in the substrate, and a plurality of active areas of the substrate are separated from each other by the trench isolation. The image sensing units and the at least one phase detection unit are in the active areas arranged in an array, and a sensing area of the at least one phase detection unit is smaller than a sensing area of each of the image sensing units. The interconnection layer is disposed on the image sensing units and the at least one phase detection unit. In addition, a method of fabricating an image sensor is also provided.

Provided is an imaging device that can acquire three independent high-quality images using one imaging element. An imaging device includes: an optical system (10) including three optical regions (12A, 12B, 12C) that transmit light in different polarization directions; an imaging element (100) including a plurality of pixel units each of which is a set of three pixels that receive light in different polarization directions; and an image processing unit (200) that calculates three pixel signals (X1, X2, X3) corresponding to each of the optical regions (12A, 12B, 12C) of the optical system (10) from three pixel signals (x1, x2, x3) obtained from each pixel unit of the imaging element (100) to generate an image of each of the optical regions (12A, 12B, 12C).

The present disclosure relates to a solid-state imaging device and an electronic device which efficiently capture incident light to improve sensitivity while maintaining the effect of suppressing noise generation. A memory is located on a side opposite from a light receiving surface and formed in the same substrate of Si as a photoelectric conversion element. The substrate including Si is defined by digging the Si deep from the light receiving surface, at a position where the memory is formed, and a bottom light-shielding film is formed at a bottom portion of the defined hole. The present disclosure is applicable to, for example, a stacked and back-illuminated solid-state imaging device.

A method for processing signals collected by pixels of a detector, each pixel being able to collect a signal under the effect of radiation to which the detector is subjected comprises: identifying a pixel, termed the affected pixel, generating a signal greater than a threshold, defining at least one adjacent pixel of the affected pixel, and, for each adjacent pixel: selecting a first comparison group associated with the affected pixel and a second comparison group associated with the adjacent pixel, the first and second comparison groups not comprising any pixel in common, comparing signals collected by each comparison group so as to determine the comparison group that has accumulated the most significant amount of signal.

The present disclosure relates to a solid-state imaging device, a method for manufacturing the same, and an electronic apparatus capable of improving sensitivity while suppressing degradation of color mixture. The solid-state imaging device includes an anti-reflection portion having a moth-eye structure provided on a boundary surface on a light-receiving surface side of a photoelectric conversion region of each pixel arranged two-dimensionally, and an inter-pixel light-blocking portion provided below the boundary surface of the anti-reflection portion to block incident light. In addition, the photoelectric conversion region is a semiconductor region, and the inter-pixel light-blocking portion has a trench structure obtained by digging the semiconductor region in a depth direction at a pixel boundary. The techniques according to the present disclosure can be applied to, for example, a solid-state imaging device of a rear surface irradiation type.

Imaging apparatus (2000, 2100, 2200) includes a photosensitive medium (2004, 2204) and an array of pixel circuits (302), which are arranged in a regular grid on a semiconductor substrate (2002) and define respective pixels (2006, 2106) of the apparatus. Pixel electrodes (2012, 2112, 2212) are connected respectively to the pixel circuits in the array and coupled to read out photocharge from respective areas of the photosensitive medium to the pixel circuits. The pixel electrodes in a peripheral region of the array are spatially offset, relative to the regular grid, in respective directions away from a center of the array.

A camera is configured with a disturbance correction engine that identifies and corrects disturbance introduced in image data when a filter is applied to the image data. The disturbance may take the form of overshoot noise, crosstalk noise, and/or low pass band energy. The disturbance correction engine determines an amount of energy deficit in the pass band and compensates for the deficit using the increase in energy in the side band. In operation, the disturbance correction engine processes the filtered image data in the frequency domain to adjust the amplitudes of the image coefficients. The adjusted image coefficients compensate for the deficit of energy in the pass band and also correct the disturbance caused by the overshoot and the crosstalk.

An imaging element, an imaging device, and an information processing method are disclosed. In one example, an imaging element includes pixel output units configured for independently setting incident angle directivity for incident light incident through both of an imaging lens and a pinhole. The pixel output units include image restoration pixel output units arranged in a matrix, at least some of the pixel output units having the incident angle directivity both in a row direction and in a column direction of the matrix, and a unidirectional pixel output unit having the incident angle directivity only in the row direction of the matrix or only in the column direction of the matrix.

An imaging device includes a semiconductor layer and a pixel cell. The pixel cell includes an impurity region of a first conductivity type, the impurity region located in the semiconductor layer, a photoelectric converter electrically connected to the impurity region and located above the semiconductor layer, a first transistor having a first gate, a first source and a first drain, one of the first source and the first drain electrically connected to the impurity region, a second transistor having a second gate of a second conductivity type different from the first conductivity type, a second source and a second drain, the second transistor including the impurity region as one of the second source and the second drain, the second gate electrically connected to the impurity region, and a third transistor having a third gate, a third source and a third drain, the third gate electrically connected to the photoelectric converter.