A photoelectric conversion device includes a plurality of pixels, a data line, and a receiving circuit. Each of plurality of pixels includes a photoelectric conversion unit, a processing circuit, and a pixel output circuit. The photoelectric conversion unit includes an avalanche photodiode that multiplies charge generated by an incident of photon by avalanche multiplication, and outputs a signal in accordance with the incident of photon. The processing circuit processes a signal output from the photoelectric conversion unit. The pixel output circuit controls an output of the signal processed by the processing circuit. The data line is connected to the plurality of pixels. The receiving circuit receives a pixel signal output from the plurality of pixels via the data line. An off-state leakage current of the transistor included in the receiving circuit is smaller than an off-state leakage current of the transistor included in the pixel output circuit.

An image sensor includes an array of optically switchable magnetic tunnel junctions (MTJs) arranged in columns and rows. The image sensor has first lines of transparent conductive material and second lines of conductive material. Each first line is in contact with the free layers of the MTJs in a corresponding row. Each second line is electrically connected to the fixed layers MTJs in a corresponding column. The first lines are concurrently exposable to radiation. The first and second lines are selectively biasable. In a global reset operation, biasing conditions are such that all MTJs are switched to an anti-parallel state. In a global sense operation, biasing conditions are such that, depending upon the intensity of radiation received at those portions of the first lines in contact with MTJs, the MTJs may switch to a parallel state. In selective read operations, biasing conditions are such that stored data values in the MTJs can be read.

A 3D imaging system includes an optical modulator for modulating a returned portion of a light pulse as a function of time. The returned light pulse portion is reflected or scattered from a scene for which a 3D image or video is desired. The 3D imaging system also includes an element array receiving the modulated light pulse portion and a sensor array of pixels, corresponding to the element array. The pixel array is positioned to receive light output from the element array. The element array may include an array of polarizing elements, each corresponding to one or more pixels. The polarization states of the polarizing elements can be configured so that time-of-flight information of the returned light pulse can be measured from signals produced by the pixel array, in response to the returned modulated portion of the light pulse.

Embodiments of the present invention relate to an image processing method and apparatus for a camera module in a night scene, an electronic device, and a storage medium. The method includes: obtaining a multi-frame target image; performing first noise reduction processing on each frame of target image in the multi-frame target image, to obtain intra-frame processing results of the multi-frame target image; performing second noise reduction processing on any two adjacent frames of target images in the multi-frame target image, to obtain inter-frame processing results; and generating an enhanced night scene effect image of the target image according to the intra-frame processing result and the inter-frame processing result.

Disclosed is an image sensing device that includes an image sensor including a pixel array, the pixel array including arranged in a predetermined pattern a first group of pixels having a first color filter, a second group of pixels having a second color filter and a third group of pixels having a third color filter, and an image processor suitable for determining, based on pixel values outputted from the image sensor, whether a group having a minimum number of pixels among the first to third groups of pixels are supersaturated and correcting a pixel value of at least one supersaturated pixel according to a determination result.

A method of limiting cross-talk in an imaging sensor, the sensor being in the form of a matrix of macropixels defining an image, each macropixel being formed by a matrix of individual pixels, each of which is dedicated to a distinct spectral band, all of the individual pixels dedicated to the same spectral band forming a sub-image, the image being topologically subdivided into at least one parcel, and the method including the following steps: measuring the spectral response of each individual pixel λ1, λ2, λ3, . . . , λ9; calculating the mean spectral response of each sub-image in a parcel; targeting to define the ideal response of each sub-image in the parcel; estimating a series of coefficients for minimizing cross-talk in the parcel; and applying the coefficients to the macropixels in order to correct the sub-images in the parcel. The method is remarkable in that the ideal response is a Gaussian function.

Disclosed is an electronic device which includes a processing block, a crosstalk compensation block, and a dark level compensation block. The processing block receives image data from an active pixel region of an image sensor and performs pre-processing on the image data. The crosstalk compensation block performs crosstalk compensation on the pre-processed image data. The dark level compensation block performs the crosstalk compensation on dark level data received from an optical black region of the image sensor and performs a subtraction operation on the crosstalk-compensated image data and the crosstalk-compensated dark level data.

There is provided a pixel circuit including a first circuit and a second circuit. The first circuit is used to output a first voltage associated with exposure intensity. The second circuit is used to output a second voltage associated with exposure time interval. The processor multiples the first voltage to a ratio between a reference voltage and the second voltage to obtain an actual light intensity, wherein the reference voltage is a voltage value outputted by the second circuit of a dummy pixel.

An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate that includes a first semiconductor layer containing an impurity of a first conductivity type and an impurity of a second conductivity type different from the first conductivity type; and a first transistor that includes, as a source or a drain, a first impurity region of the second conductivity type in the first semiconductor layer. The first semiconductor layer includes: a charge accumulation region that is an impurity region of the second conductivity type, the charge accumulation region being configured to accumulate the signal charge; and a blocking structure that is located between the charge accumulation region and the first transistor, and the blocking structure includes a second impurity region of the second conductivity type.

A system and method is provided for performing high dynamic range digital double sampling. More particularly, a CMOS image sensor is provided that includes a pixel array with each pixel sampling both dark and bright values for digital double sampling. After the sampled signals are digitized, a mean dark value is determined and each dark value is further fed to a lookup table that generates an output value taking into account whether the pixel has been saturated. In over exposed conditions, the lookup table will generate a negative value output to eliminate image artifacts. All three values are fed to adder logic circuit that subtracts the mean dark value and the lookup table output from the bright value. This resulting output is fed to a video viewer.