A radiation imaging apparatus comprising a first memory storing first gain correction data corresponding to imaging modes, a second memory having a higher read speed than the first memory, and a controller being able to perform imaging in the imaging modes is provided. The controller stores second gain correction data based on the first gain correction data in the second memory after startup, and when an imaging request is issued from startup to storage of all the second gain correction data into the second memory and requested gain correction data which corresponds to a requested imaging mode has been stored in the second memory, performs acquisition of radiation image data and offset correction data in the requested imaging mode and correction for the radiation image data by using the offset correction data and the requested gain correction data stored in the second memory.

A pixel cell includes a nitrogen-implanted region at a semiconductor material-gate oxide proximate interface located in a region above a photodiode. The pixel cell is further devoid of implanted nitrogen in channel regions of a plurality of pixel transistors. Thus, Si—N bonds are formed at the semiconductor material-gate oxide interface in the region above the photodiode, while the channel regions are protected from nitrogen implantation at the semiconductor material-gate oxide interface. Methods of forming the pixel cell are also described.

A pixel cell includes a nitrogen-implanted region at a semiconductor material-gate oxide proximate interface located in a region above a photodiode. The pixel cell is further devoid of implanted nitrogen in channel regions of a plurality of pixel transistors. Thus, Si—N bonds are formed at the semiconductor material-gate oxide interface in the region above the photodiode, while the channel regions are protected from nitrogen implantation at the semiconductor material-gate oxide interface. Methods of forming the pixel cell are also described.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

An imaging device may include single-photon avalanche diodes (SPADs). To improve the sensitivity and signal-to-noise ratio of the SPADs, light scattering structures may be formed in the semiconductor substrate to increase the path length of incident light through the semiconductor substrate. To mitigate crosstalk, an isolation structure may be formed in a ring around the SPAD. The isolation structure may be a hybrid isolation structure with both a metal filler that absorbs light and a low-index filler that reflects light. The isolation structure may be formed as a single trench or may include a backside deep trench isolation portion and a front side deep trench isolation portion. The isolation structure may also include a color filtering material.

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

Disclosed is an image sensor including a first comparison circuit suitable for comparing an active pixel signal with a ramp signal to generate a first comparison signal through a first comparison output terminal, and a first compensation circuit coupled to the first comparison output terminal, and suitable for selectively applying a first compensation noise, which corresponds to a power noise generated by the first comparison circuit, to the first comparison output terminal on the basis of a first control signal.

An imaging device including pixels including a first pixel and a second pixel, the pixels arranged in rows and columns, the first pixel belonging to a first column, the second pixel belonging to a second column adjacent the first column; a first signal path through which a signal from the first pixel flows; and a second signal path through which a signal from the second pixel flows, a first circuit including first and second lines, a first voltage being applied to the first lines, a second voltage different from the first voltage applied to the second lines. The first signal path is located in a region closer to one of the first lines than any of the second lines in a plan view, and the second signal path is located in a region closer to one of the second lines than any of the first lines in the plan view.

It is an object to realize a correcting process for correcting a defective image in a region of interest (ROI) that is a partial region segmented from a captured image. A transmitting apparatus includes a controlling section that controls the holding of defect correcting information for use in correcting a defect in an image included in a ROI and a transmitting section that sends out image data of the image included in the ROI as payload data and sends out ROI information as embedded data.