An image sensing device may include a plurality of test pixel blocks and a signal processing unit. The test pixel blocks may be simultaneously heated to different temperatures. The signal processing unit may be in communication with the test blocks and configured to obtain pixel signals for different colors, respectively, based on dark current information associated with the temperatures of the test pixel blocks.

To control an excess bias to an appropriate value in a light detection device.

A solid-state image sensor includes a photodiode, a resistor, and a control circuit. In this solid-state image sensor, the photodiode photoelectrically converts incident light and outputs a photocurrent. Furthermore, in the solid-state image sensor, the resistor is connected to a cathode of the photodiode. Furthermore, in the solid-state image sensor, the control circuit supplies a lower potential to an anode of the photodiode as a potential of the cathode of when the photocurrent flows through the resistor is higher.

There is provided a method for capturing a sequence of image frames in a thermal camera having a microbolometer detector comprising: capturing a first sequence and a second sequence of image frames with a shutter of the thermal camera being in a closed state and an open state, respectively. While capturing each of the first and the second sequence, an integration time of the microbolometer detector is switched between a plurality of integration times according to one or more repetitions of a temporal pattern of integration times. The method further comprises correcting image frames in the second sequence that are captured when the integration time is switched to a particular position within the temporal pattern of integration times using image frames in the first sequence that are captured when the integration time is switched to the same particular position within the temporal pattern of integration times.

To reduce a dark current of an image sensor including a photoelectric conversion unit disposed on a back surface of a semiconductor substrate.

The image sensor includes a photoelectric conversion unit, a through-electrode, a charge holding unit, a back-side high impurity concentration region, and a front-side high impurity concentration region. The photoelectric conversion unit is disposed on a back surface of a semiconductor substrate and performs photoelectric conversion of incident light. The through-electrode is formed in a shape penetrating from the back surface to a front surface of the semiconductor substrate and transmits a charge generated by the photoelectric conversion. The charge holding unit is disposed on the front surface of the semiconductor substrate and holds the transmitted charge. The back-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the back surface of the semiconductor substrate and is formed to have a higher impurity concentration than an impurity concentration of a region adjacent to the through-electrode at the central portion of the semiconductor substrate. The front-side high impurity concentration region is disposed in a region adjacent to the through-electrode on the front surface of the semiconductor substrate and is formed to have a higher impurity concentration than the impurity concentration of the region adjacent to the through-electrode at the central portion of the semiconductor substrate.

In an imaging apparatus, each of a plurality of pixels has a first semiconductor area having a first conductivity type, a floating diffusion area, and a transfer gate positioned between the first semiconductor area and the floating diffusion area. In a part of the plurality of pixels, a partial area of the first semiconductor area receives a potential supplied from a contact. The part of the plurality of pixels further has a second semiconductor area having a second conductivity type positioned between the partial area and the transfer gate in a planar view.

There is provided a solid-state image pickup element including: a photodiode configured to convert incident light into a photocurrent; an amplification transistor configured to amplify a voltage between a gate having a potential depending on the photocurrent and a source having a predetermined reference potential and output the amplified voltage from a drain; and a potential supply section configured to supply an anode of the photodiode and a back-gate of the amplification transistor with a predetermined potential lower than the reference potential.

An image sensor includes an array of pixels inside and on top of a substrate. A control circuit is configured to apply voltage potentials to the substrate. During a first phase, the control circuit applies a ground potential to the substrate. During a second phase, the control circuit applies a potential positive with respect to the ground potential to the substrate.

To improve the correction accuracy in a solid-state image sensor that performs dark current correction. A solid-state image sensor includes a bias voltage supply unit and a signal processing unit. The bias voltage supply unit supplies a bias voltage of a predetermined value to a light-shielded pixel impervious to light in a period in which a light-shielded pixel signal is output from the light-shielded pixel, and supplies a bias voltage of a value different from the predetermined value to a photosensitive pixel not impervious to light in a period in which a photosensitive pixel signal is output from the photosensitive pixel. The signal processing unit executes processing of removing dark current noise from the photosensitive pixel signal using the light-shielded pixel signal.

An imaging device includes: an effective pixel region that includes a plurality of imaging elements-A, amplifies signal charges generated by photoelectric conversion, and reads the signal charges into a drive circuit; and an optical black region that includes a plurality of imaging elements-B, surrounds the effective pixel region, and outputs optical black that serves as the reference for black level. In the imaging device, the photoelectric conversion layer forming the plurality of imaging elements-A and the plurality of imaging elements-B is a common photoelectric conversion layer, the common photoelectric conversion layer is located on an outer side of the optical black region, and extends toward an outer edge region surrounding the optical black region, and an outer edge electrode is disposed in the outer edge region.

The present disclosure relates to a solid state image sensor and electronic equipment that enable degradation in image quality of a captured image to be suppressed even if any pixel in a pixel array is configured as a functional pixel for obtaining desired information in order to obtain information different from a normal image. In a plurality of pixels constituting subblocks provided in an RGB Bayer array constituting a block which is a set of color units, normal pixels that capture a normal image are arranged longitudinally and laterally symmetrically within the subblock, and functional pixels for obtaining desired information other than capturing an image are arranged at the remaining positions. The present disclosure can be applied to a solid state image sensor.