Systems, methods, and devices for fluorescence imaging with a minimal area image sensor are disclosed. A system includes an emitter for emitting pulses of electromagnetic radiation and an image sensor comprising a pixel array for sensing reflected electromagnetic radiation, wherein the pixel array comprises active pixels and optical black pixels. The system includes a black clamp providing offset control for data generated by the pixel array and a controller comprising a processor in electrical communication with the image sensor and the emitter. The system is such that at least a portion of the pulses of electromagnetic radiation emitted by the emitter comprises electromagnetic radiation having a wavelength from about 770 nm to about 790 nm.

Systems, methods, and devices for fluorescence imaging with a minimal area image sensor are disclosed. A system includes an emitter for emitting pulses of electromagnetic radiation and an image sensor comprising a pixel array for sensing reflected electromagnetic radiation, wherein the pixel array comprises active pixels and optical black pixels. The system includes a black clamp providing offset control for data generated by the pixel array and a controller comprising a processor in electrical communication with the image sensor and the emitter. The system is such that at least a portion of the pulses of electromagnetic radiation emitted by the emitter comprises one or more of: electromagnetic radiation having a wavelength from about 770 nm to about 790 nm; or electromagnetic radiation having a wavelength from about 795 nm to about 815 nm.

In an imaging device according to the present disclosure, during a period in which a signal from an amplifier transistor is output from a pixel via a select transistor, the gate voltage of the capacitance addition transistor changes frons the first voltage VH to the second voltage VL, and the amount of voltage change per time until the gate voltage changes from the first voltage VH to the second voltage VL is smaller than the amount of voltage change per unit time until the gate voltage changes from the second voltage VL to the first voltage VH.

Methods and apparatus for temperature sensing in a detector system. Dark current from pixels in a pixel array of the detector system can be filtered to remove noise and processed to determine a temperature of the pixel array from the filtered dark current. Calibration of the dark current for a range of temperatures can be performed. In embodiments, the pixels comprise photodiodes.

Methods and apparatus for temperature sensing in a detector system. Dark current from pixels in a pixel array of the detector system can be filtered to remove noise and processed to determine a temperature of the pixel array from the filtered dark current. Calibration of the dark current for a range of temperatures can be performed. In embodiments, the pixels comprise photodiodes.

A system for obtaining dark current images includes one or more processors and one or more hardware storage devices storing instructions that are executable by the one or more processors to configure the system to perform various acts. The acts include obtaining a first image frame, generating a first low-pass filtered image by applying a low-pass filter to the first image frame, and generating a first estimated dark current image by subtracting the first low-pass filtered image from the first image frame.

A system for obtaining dark current images includes one or more processors and one or more hardware storage devices storing instructions that are executable by the one or more processors to configure the system to perform various acts. The acts include obtaining a first image frame, generating a first low-pass filtered image by applying a low-pass filter to the first image frame, and generating a first estimated dark current image by subtracting the first low-pass filtered image from the first image frame.

A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is captured by performing a first plurality of gate operations to configure the SPAD array to enable photon detection over a frame capture time period. The first plurality of gate operations is performed at a first gating rate such that the first plurality of gate operations comprises a first quantity of gate operations performed over the frame capture time period. The system is further configurable to define a second gating rate based on the first frame metadata and capture a second image frame by performing a second plurality of gate operations to configure the SPAD array to enable photon detection at the second gating rate.

A system for selectively modifying gating rate in a single photon avalanche diode (SPAD) is configurable to access first frame metadata associated with a first image frame. The first image frame is captured by performing a first plurality of gate operations to configure the SPAD array to enable photon detection over a frame capture time period. The first plurality of gate operations is performed at a first gating rate such that the first plurality of gate operations comprises a first quantity of gate operations performed over the frame capture time period. The system is further configurable to define a second gating rate based on the first frame metadata and capture a second image frame by performing a second plurality of gate operations to configure the SPAD array to enable photon detection at the second gating rate.

In a solid-state image sensor that detects presence or absence of an address event, erroneous detection of the address event is suppressed. Each of a plurality of pixels executes detection processing for detecting whether or not a change amount of an incident light amount exceeds a predetermined threshold, and outputting a detection result. An abnormal pixel determination unit determines whether or not each of the plurality of pixels has an abnormality, and enables a pixel without an abnormality and disables a pixel with an abnormality. A control unit performs control for causing the enabled pixel to execute detection processing and control for fixing the detection result of the disabled pixel to a specific value.