A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of to photodiode to transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method is removing fixed pattern noise and an image sensor are further provided.

A method of removing fixed pattern noise, comprising: S01: performing a single-frame segmented exposure on a pixel array; S02: reading a of the pixel array, comprising: S021: performing a soft reset, so as to set the reset signal of the pixel unit to an intermediate voltage, and reading a differential reset signal; S022: performing a hard reset so as to set the reset signal of the pixel unit to a high voltage; S023: turning on a transmission MOS transistor to enable an exposure signal of to photodiode to transmitted to the floating diffusion area, and reading a differential pixel transmission signal; S03: subtracting the differential reset signal from the differential pixel transmission signal to obtain an exposure signal with fixed pattern noise removed. Another method is removing fixed pattern noise and an image sensor are further provided.

An image sensing device includes at least one unit pixel including a plurality of pixels for generating a plurality of pixel signals based on a plurality of control signals having different phases, and an equalizing circuit suitable for equalizing noise that occurs in the plurality of pixels during a reset operation on the unit pixel.

An imaging device having a pixel including: a photoelectric converter that generates an electric signal through photoelectric conversion of incident light; a first transistor that has a gate coupled to the photoelectric converter and that amplifies the electric signal; and a second transistor that has a gate coupled to the photoelectric converter, one of a source and a drain of the second transistor being coupled to the photoelectric converter. The imaging device further includes a voltage supply circuit configured to supply two or more different voltages to the other of the source and the drain of the second transistor.

An image sensor for electronic cameras has a plurality of pixels for generating exposure-dependent signals, wherein a respective pixel at least comprises at least one light-sensitive element; a readout node; a transfer gate; a converter transistor; and a selection switch that is connected to a signal output of the converter transistor to selectively couple the signal output to a column line of the image sensor. The column line is coupled or can be coupled to a negative input of an associated column amplifier via an input capacitor, wherein an amplifier output of the column amplifier is connected to a column readout circuit and to a compensation line. The compensation line is coupled via a respective feedback capacitor to the respective readout node of the associated pixels.

An imaging device including: a first photoelectric converter that generates a first signal by photoelectric conversion; a first transistor having a gate configured to be electrically coupled to the first photoelectric converter; a second photoelectric converter that generates a second signal by photoelectric conversion; a capacitor having a first terminal and a second terminal, the first terminal being configured to be electrically coupled to second photoelectric converter, a first potential being applied to the second terminal; and a switch element provided between the gate of the first transistor and the first terminal of the capacitor.

An imaging device including: a photoelectric converter that generates a signal charge by photoelectric conversion of light; a semiconductor substrate; a charge accumulation region that is an impurity region of a first conductivity type in the semiconductor substrate, the charge accumulation region being configured to receive the signal charge; a first transistor that includes, as a source or a drain, a first impurity region of the first conductivity type in the semiconductor substrate; and a blocking structure that is located between the charge accumulation region and the first transistor. The blocking structure includes a second impurity region of a second conductivity type in the semiconductor substrate, the second conductivity type being different from the first conductivity type, and a first electrode that is located above the semiconductor substrate, the first electrode being configured to be applied with a first voltage.

A photoelectric conversion device includes a pixel unit having pixels arranged to form rows and columns, each including a transfer transistor that transfers charge in a photoelectric converter to an output unit, and a pixel control unit that controls the pixels. The pixel control unit is configured to supply a control signal in accordance with an exposure period individually defined for pixel blocks of the pixel unit to pixels of each pixel block and read out, from each pixel, a first signal obtained when the photoelectric converter is in a reset state and a second signal based on charge accumulated in the photoelectric converter during the exposure period. A period excluding both the exposure period and a readout period of the second signal corresponds to a reset period of the photoelectric converter. The transfer transistor is off in a readout period of the first and second signals.

An image sensor and pixel circuit therefor includes a plurality of photoelectric conversion devices, a zero-biased multiplexer connected to the plurality of photoelectric conversion devices, an amplifier including a first input terminal connected to the zero-biased multiplexer, and an output terminal, a capacitor disposed between the first input terminal and the output terminal, and a reset switch disposed between the first input terminal and the output terminal in parallel with the capacitor, the reset switch including a body terminal connected to a common reference voltage.

An A/D converter and an image sensor are disclosed. The image sensor includes: a pixel array including a plurality of pixels; a ramp signal generator configured to generate a ramp signal; and a comparison circuit configured to output a comparison result signal by comparing a pixel signal output by the pixel array with the ramp signal. The comparison circuit includes: a first comparator stage configured to output a first stage output signal according to a result of comparing the pixel signal with the ramp signal, to a first circuit node; a limiter including an n-type transistor having one end connected to the first circuit node and an opposite end to which power supply voltage is applied; and a second comparator stage configured to generate the comparison result signal by shaping the first stage output signal.