In an imaging apparatus, each of a plurality of pixels has a first semiconductor area having a first conductivity type, a floating diffusion area, and a transfer gate positioned between the first semiconductor area and the floating diffusion area. In a part of the plurality of pixels, a partial area of the first semiconductor area receives a potential supplied from a contact. The part of the plurality of pixels further has a second semiconductor area having a second conductivity type positioned between the partial area and the transfer gate in a planar view.

A blemish detection and characterization system and techniques for an optical imaging device includes determining a ratio of the light intensity of the image lost to the blemish relative to an expected light intensity of the image without the blemish. The system and technique may include receiving an image, transforming an image into a processed image with transformations and filters, as well as determining a relative magnitude of an intensity of a portion of the processed image relative to another area of the image. The system and technique may include taking an action based on the relative magnitude including rejecting a sensor, reworking the sensor, cleaning the sensor, or providing information about the blemish to a system to use in weighing data collected from the sensor.

An image processing device includes a target pixel detector configured to detect a plurality of target pixels in which noise is generated among a plurality of pixels included in an image sensor. The image processing device also includes a target pixel corrector configured to change target pixel values, which are pixel values of the plurality of target pixels, by using average pixel values of neighboring pixels included in a preset range based on a position of each of the plurality of target pixels. The image processing device further includes a target pixel compensator configured to compensate for the target pixel values by using an accumulation value obtained by accumulating values corresponding to a decimal fraction part of the average pixel values.

The present technology relates to a solid-state image sensing device and an electronic device for reducing noises. The solid-state image sensing device includes: a photoelectric conversion unit; a charge holding unit for holding charges transferred from the photoelectric conversion unit; a first transfer transistor for transferring charges from the photoelectric conversion unit to the charge holding unit; and a light blocking part including a first light blocking part and a second light blocking part, in which the first light blocking part is arranged between a second surface opposite to a first surface as a light receiving surface of the photoelectric conversion unit and the charge holding unit, and covers the second surface, and is formed with a first opening, and the second light blocking part surrounds the side surface of the photoelectric conversion unit. The present technology is applicable to solid-state image sensing devices of backside irradiation type, for example.

A solid-state imaging device includes a pixel part, a reading part for reading a pixel signal from the pixel part and a response data generating part including a fuzzy extractor. The response data generating part generates response data including a unique key in association with at least one selected from among variation information of pixels and variation information of the reading part. The response data generating part generates, when regenerating a key, a unique key using helper data acquired in generation of an initial key, variation information acquired in the regeneration of the key, and reliability information determined based on the variation information acquired in the regeneration of the key.

A radiation imaging apparatus includes pixels arranged to form pixel rows and pixel columns. The pixels include first pixels and second pixels whose sensitivity to radiation is lower than the first pixels. The apparatus further includes a signal lines arranged to correspond to the pixel columns, a readout circuit configured to read out a signal from the pixels via the signal lines, and a processing unit configured to decide a correction value using signals read out from the second pixels and correct signals read out from the first pixels using the correction value. An internal structure of the readout circuit has a period. The second pixels are arranged such that there are two or more types of remainders of column numbers of pixel columns that include the second pixels divided by the period.

A radiation imaging apparatus includes pixels arranged to form pixel rows and pixel columns. The pixels include first pixels and second pixels whose sensitivity to radiation is lower than the first pixels. The apparatus further includes a signal lines arranged to correspond to the pixel columns, a readout circuit configured to read out a signal from the pixels via the signal lines, and a processing unit configured to decide a correction value using signals read out from the second pixels and correct signals read out from the first pixels using the correction value. An internal structure of the readout circuit has a period. The second pixels are arranged such that there are two or more types of remainders of column numbers of pixel columns that include the second pixels divided by the period.

An example image capture device includes a display configured to display captured images, a camera sensor, the camera sensor being disposed to receive light through at least a portion of the display, memory configured to store captured images, and one or more processors coupled to the camera sensor, the display, and the memory. The one or more processors are configured to receive a signal from a sensor. The one or more processors are configured to determine, based at least in part on the signal, a user interface mode. The user interface mode includes a first mode having a first number of black pixels or a second mode having a second number of black pixels. The first number is greater than the second number. The one or more processors are also configured to receive image data from the camera sensor.

An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.

An imaging device having first and second pixels is described. The first pixel includes a first transfer transistor, a first reset transistor, a first amplifier transistor and a first select transistor. The second pixel includes a first photoelectric conversion element, a second transfer transistor, a second reset transistor, a second amplifier transistor and a second select transistor.