A rod lens array 10a includes a plurality of gradient-index rod lenses 1b arrayed to have optical axes parallel to each other, and forms an erecting equal-magnification image. The gradient-index rod lenses 1b each have a refractive-index distribution in a radial direction thereof. The refractive-index distribution n(r) is approximated by n(r)=n.sub.0⋅{1-(A/2)⋅r.sup.2}, where a refractive index at a center of the gradient-index rod lens 1b is represented by n.sub.0, a refractive-index distribution constant of the gradient-index rod lens 1b is represented by \A, and a distance from the center of the gradient-index rod lens 1b is represented by r. The gradient-index rod lens 1b has an aperture angle θ of 3 to 6°, the aperture angle θ represented by θ=sin.sup.−1(n.sub.0\A⋅r.sub.0), where a radius of the gradient-index rod lens is represented by r.sub.0. The rod lens array 10a has an imaging distance of 45 to 75 mm and a depth of field of 1.5 to 3.0 mm with value of modulation transfer function (MTF) of 30% or more at a spatial frequency of 6 Ip/mm.

A photodetecting device includes a semiconductor substrate including a one-dimensionally distributed plurality of pixels. The photodetecting device includes, for each pixel, a plurality of avalanche photodiodes arranged to operate in Geiger mode, a plurality of quenching resistors electrically connected in series with the respective avalanche photodiodes, and a signal processing unit arranged to process output signals from the plurality of avalanche photodiodes. Light receiving regions of the plurality of avalanche photodiodes are two-dimensionally distributed for each pixel. Each signal processing unit includes a gate grounded circuit and a current mirror circuit electrically connected to the gate grounded circuit. The gate grounded circuit is electrically connected to the plurality of avalanche photodiodes of the corresponding pixel via the plurality of quenching resistors. The current minor circuit is arranged to output a signal corresponding to output signals from the plurality of avalanche photodiodes.

A photoelectric conversion element includes a first pixel array including first light-receiving sections arranged in a direction and a second pixel array including second light-receiving sections arranged in the direction. Each of the first light-receiving sections includes a first pixel configured to receive at least light having a first wavelength inside a visible spectrum and a first pixel circuit configured to transmit a signal from the first pixel to a subsequent stage. Each of the second light-receiving sections includes a second pixel configured to receive at least light having a second wavelength outside the visible spectrum and a second pixel circuit configured to transmit a signal from the second pixel to the subsequent stage. The second pixel circuit is provided in a vicinity of the second pixel.

A sensing device, including a plurality of sensing pixels arranged in Y rows and M columns, a plurality of readout lines coupled to the sensing pixels, and a plurality of control lines each coupled to a sensing pixel subset, is provided. The Y times N sensing pixels within the sensing pixel subset are arranged in adjacent N columns, where Y, M and N are integers and N is smaller than M. Each of the control lines is configured to control one row of the sensing pixel subset to output signals through corresponding readout lines.

A sensing device, including a plurality of sensing pixels arranged in Y rows and M columns, a plurality of readout lines coupled to the sensing pixels, and a plurality of control lines each coupled to a sensing pixel subset, is provided. The Y times N sensing pixels within the sensing pixel subset are arranged in adjacent N columns, where Y, M and N are integers and N is smaller than M. Each of the control lines is configured to control one row of the sensing pixel subset to output signals through corresponding readout lines.

An apparatus is described that include a line buffer unit composed of a plurality of a line buffer interface units. Each line buffer interface unit is to handle one or more requests by a respective producer to store a respective line group in a memory and handle one or more requests by a respective consumer to fetch and provide the respective line group from memory. The line buffer unit has programmable storage space whose information establishes line group size so that different line group sizes for different image sizes are storable in memory.

One pixel unit including at least one light receiving element of a light receiving element array (photodiode array) and a light source have a one-to-one correspondence, and only when the light source emits light, the light beam is detected by at least one light receiving element (one pixel unit) corresponding to the light source. An illumination optical system includes a light guiding means for guiding to an inspection object by reducing an interval between optical axes of light beams emitted from a plurality of light sources in an arrangement direction of a plurality of the light sources.

One pixel unit including at least one light receiving element of a light receiving element array (photodiode array) and a light source have a one-to-one correspondence, and only when the light source emits light, the light beam is detected by at least one light receiving element (one pixel unit) corresponding to the light source. An illumination optical system includes a light guiding means for guiding to an inspection object by reducing an interval between optical axes of light beams emitted from a plurality of light sources in an arrangement direction of a plurality of the light sources.

Binnable time-of-flight (ToF) pixels are described, such as for integration with image sensor pixels. Each binnable ToF pixel includes a central dump gate and sub-pixels that are nominally mirror-symmetric and identical around the dump gate. Each sub-pixel includes a photodiode region (or a respective portion of a photodiode region), a storage gate, a storage region, a transfer gate, and a floating diffusion (FD) region. In an array, the binnable ToF pixels are arranged to share FD regions with other binnable ToF pixels of the array. In an un-binned mode, each sub-pixel can integrate photocharge in its storage region until it is time for readout, at which time the photocharges can be transferred to its respective floating diffusion region for individualized readout. In a binned mode, sub-pixels can integrate photocharge directly in their FD regions, which facilitates charge binning of integrated photocharge from all sub-pixels sharing the same FD region.

According to one embodiment, an optical imaging apparatus includes: an image-forming optical portion, a wavelength selection portion, and an imaging portion. The image-forming optical portion forms an image of an object by means of light beams that include a first wavelength and a second wavelength different from the first wavelength. The first wavelength selection portion has wavelength selection regions. The wavelength selection regions are an anisotropic wavelength selection opening having a different distribution of the wavelength selection regions depending on a direction along a first axis and a direction along a second axis. The imaging portion is configured to simultaneously acquire an image of the first light beam and the second light beam.