An imaging element according to an embodiment includes: a unit pixel including a first pixel having a first photoelectric conversion element and including a second pixel having a second photoelectric conversion element, the second pixel being arranged adjacent to the first pixel; and an accumulation portion that accumulates a charge generated by the second photoelectric conversion element and converts the accumulated charge into a voltage. The accumulation portion is disposed at a boundary between the unit pixel and another unit pixel adjacent to the unit pixel.

An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

An image sensor includes imaging pixels and a patterned liquid crystal polarizer (LCP). The imaging pixel include subpixels. The patterned LCP is disposed over the subpixels and configured to direct a particular polarized portion of imaging light to particular subpixels.

The present technology relates to an imaging element and an electronic device capable of preventing light from leaking into an adjacent pixel. A semiconductor layer in which a first pixel in which a read pixel signal is used to generate an image, and a second pixel in which the read pixel signal is not used to generate an image are arranged, and a wiring layer stacked on the semiconductor layer are provided, and a structure of the first pixel and a structure of the second pixel are different. A first inter-pixel separation portion that separates the semiconductor layer of the adjacent first pixels, and a second inter-pixel separation portion that separates the semiconductor layer of the adjacent second pixels are further provided, and the first inter-pixel separation portion and the second inter-pixel separation portion are provided with different structures. The present technology can be applied to an imaging element in which dummy pixels are arranged.

The present technology relates to an imaging element and an electronic device capable of preventing light from leaking into an adjacent pixel. A semiconductor layer in which a first pixel in which a read pixel signal is used to generate an image, and a second pixel in which the read pixel signal is not used to generate an image are arranged, and a wiring layer stacked on the semiconductor layer are provided, and a structure of the first pixel and a structure of the second pixel are different. A first inter-pixel separation portion that separates the semiconductor layer of the adjacent first pixels, and a second inter-pixel separation portion that separates the semiconductor layer of the adjacent second pixels are further provided, and the first inter-pixel separation portion and the second inter-pixel separation portion are provided with different structures. The present technology can be applied to an imaging element in which dummy pixels are arranged.

An image sensing device is provided to include a pixel array including unit pixel blocks that are arranged in a first direction and a second direction crossing the first direction, each unit pixel block configured to generate pixel signals in response to incident light reflected from a target object. The unit pixel block includes normal first pixel configured to receive a portion of the incident light at a first arrival time and generate a first pixel signal in response to the incident light, and a second pixel configured to receive another portion of the incident light at a second arrival time and generate a second pixel signal in response to the incident light. The second arrival time is later than the first arrival time.

An image sensor includes a two-dimensional pixel array and a lens array. The two-dimensional pixel array comprises a plurality of pixels. Some of the pixels includes two sub-pixels. A rectangular coordinate is established by taking the pixel as an origin, a length direction of the two-dimensional pixel array as an x-axis, and a width direction of the two-dimensional pixel array as a y-axis. The two sub-pixels lie in both a positive half axis and a negative half axis of the x-axis and lies in both a positive half axis and a negative half axis of the y-axis. The lens array comprises a plurality of lenses, each covering one of the pixels.

An image sensor includes a two-dimensional pixel array and a lens array. The two-dimensional pixel array comprises a plurality of pixels. Some of the pixels includes two sub-pixels. A rectangular coordinate is established by taking the pixel as an origin, a length direction of the two-dimensional pixel array as an x-axis, and a width direction of the two-dimensional pixel array as a y-axis. The two sub-pixels lie in both a positive half axis and a negative half axis of the x-axis and lies in both a positive half axis and a negative half axis of the y-axis. The lens array comprises a plurality of lenses, each covering one of the pixels.

An imaging device includes: a first image sensor comprising first pixels that receive incident light, and that include a first and second photoelectric conversion units that are arranged in a first direction; and a second image sensor including second pixels that receive light that has passed through the first image sensor, and that include a third and fourth photoelectric conversion units that are arranged in a second direction that is different from the first direction.

An example imaging sensor comprises a bulk silicon substrate and a pixel array. The pixel array comprises an active pixel region including an active pixel subarray, an optical black pixel region including an optical black pixel subarray, and an optical black dummy pixel region including an optical black dummy pixel subarray, the optical black dummy pixel region positioned between the active pixel region and the optical black pixel region. A near-infrared absorber is positioned between the active pixel region and the optical black pixel region, the near-infrared absorber comprising a material having a higher near-infrared absorption coefficient than that of silicon.