A lens apparatus includes an imaging optical system, a storage unit configured to store aperture information about the imaging optical system, and a transmission unit configured to transmit the aperture information to an imaging apparatus, wherein the aperture information is determined based on a shape parameter representing a shape of an aperture which defines an outer edge of a light flux passing through the imaging optical system.

An image sensor includes a pixel portion in which a plurality of unit pixels each having one micro lens and a plurality of photoelectric conversion portions are arrayed in a matrix, a signal readout portion that reads out signals accumulated in the photoelectric conversion portions and converts the read signals to digital signals, a signal processor that processes signals read out by the signal readout portion and has an image capture signal processor that performs signal processing for generating a captured image on signals read out by the signal readout portion and a focus detection signal processor that performs signal processing for focus detection on signals read out by the signal readout portion, and an output portion that outputs signals processed by the signal processor.

The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.

An image sensor includes a Bayer pattern-type pixel array including a plurality of Bayer pattern-type extended blocks each having first to fourth pixel blocks, each of the first to fourth pixel blocks including first to fourth pixels, the first and fourth pixels of the first and fourth pixel blocks being configured to sense green light, the first and fourth pixels of the second and third pixel blocks being configured to sense red light and blue light, respectively, and the second and third pixels of the first to fourth pixel blocks being configured to sense white light, and a signal processing unit merging Bayer pattern color information generated from the first and fourth pixels of the first to fourth pixel blocks, and the Bayer pattern illuminance information generated from the second and third pixels of the first to fourth pixel blocks.

An image sensor includes a pixel portion in which a plurality of unit pixels each having one micro lens and a plurality of photoelectric conversion portions are arrayed in a matrix, a signal readout portion that reads out signals accumulated in the photoelectric conversion portions and converts the read signals to digital signals, a signal processor that processes signals read out by the signal readout portion and has an image capture signal processor that performs signal processing for generating a captured image on signals read out by the signal readout portion and a focus detection signal processor that performs signal processing for focus detection on signals read out by the signal readout portion, and an output portion that outputs signals processed by the signal processor.

An image sensor includes a pixel portion in which a plurality of unit pixels each having one micro lens and a plurality of photoelectric conversion portions are arrayed in a matrix, a signal readout portion that reads out signals accumulated in the photoelectric conversion portions and converts the read signals to digital signals, a signal processor that processes signals read out by the signal readout portion and has an image capture signal processor that performs signal processing for generating a captured image on signals read out by the signal readout portion and a focus detection signal processor that performs signal processing for focus detection on signals read out by the signal readout portion, and an output portion that outputs signals processed by the signal processor.

Embodiments of the present disclosure provide a dual-modality neuromorphic vision sensor. A first-type current-mode active pixel sensor (APS) circuit can mimic excitatory rod cells, to perceive light intensity gradient information in a target light signal, thereby improving a dynamic arrange of an image sensed by a neuromorphic, vision sensor and its shooting speed. In addition, a first-type control switch is introduced for each of non-target first-type photosensitive devices, to control the obtained light intensity gradient information, and adjust the dynamic arrange of the image sensed by the neuromorphic vision sensor, thereby adjusting the shooting speed, and realizing a reconfigurable effect A voltage-mode APS can mimic cone cells, to output a target voltage signal representing light intensity information in the target light signal, and perceive the light intensity information in the target light signal. In this way, the obtained light intensity information represented by the target voltage signal has a higher precision, thereby ensuring the image quality.

An image sensor includes a substrate including pixel regions and having a first surface, a second surface opposite the first surface. and a first trench recessed from the first surface, a shallow device isolation pattern provided in the first trench, and a deep device isolation pattern between the pixel regions and provided in the substrate. The deep device isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and an isolation pattern provided between the substrate and the semiconductor pattern. The isolation pattern includes a first isolation pattern adjacent to the second surface, and a second isolation pattern adjacent to the first surface. A first interface at which the first isolation pattern contacts the second isolation pattern is spaced apart from the shallow device isolation pattern. The first isolation pattern includes a different material from that of the second isolation pattern.

Embodiments disclosed herein reduce petal flare. A flare-suppressing image sensor includes a plurality of pixels including a first set of pixels and a second set of pixels. The flare-suppressing image sensor further includes plurality of microlenses, where each microlens is aligned to a respective one of the first set of pixels. The flare-suppressing image sensor further includes plurality of sub-microlens, where each microlens array is aligned to a respective one of the second set of pixels.

A CMOS image sensor with an imaging array of pixels containing selected pixels wherein illumination is blocked and light scattered from an adjacent pixel is collected. The signal from the selected pixels is resilient against saturation and thereby contributes to increased dynamic range of the imaging signal. The image sensor may be incorporated within a digital camera.