A photoelectric conversion device includes a pixel region in which unit pixels each including a photoelectric conversion unit are arranged to form rows and columns, output lines arranged at least two in each column and each connected to the unit pixel of the corresponding column, column circuits provided corresponding to each of the output lines, and a control circuit configured to control connections between the output lines and the column circuits. The control circuit is configured to connect a first output line to a corresponding first column circuit and disconnect a second output line arranged in the same column as the first output line from a corresponding second column circuit when no pixel signal is output to the second output line at a timing when a pixel signal is output to the first output line.

A photoelectric conversion device includes a pixel region in which unit pixels each including a photoelectric conversion unit are arranged to form rows and columns, output lines arranged at least two in each column and each connected to the unit pixel of the corresponding column, column circuits provided corresponding to each of the output lines, and a control circuit configured to control connections between the output lines and the column circuits. The control circuit is configured to connect a first output line to a corresponding first column circuit and disconnect a second output line arranged in the same column as the first output line from a corresponding second column circuit when no pixel signal is output to the second output line at a timing when a pixel signal is output to the first output line.

An imaging device includes a semiconductor substrate, a photoelectric conversion layer located above the semiconductor substrate, a first signal detection transistor that includes a first gate electrode above the semiconductor substrate and that outputs a signal corresponding to an electric potential of the first gate electrode, a second signal detection transistor that includes a second gate electrode above the semiconductor substrate and that outputs a signal corresponding to an electric potential of the second gate electrode, a first contact plug in contact with the first gate electrode, and a second contact plug in contact with the second gate electrode. The first gate electrode is electrically connected to the photoelectric conversion layer through the first contact plug. The second gate electrode and the second contact plug are electrically insulated from the photoelectric conversion layer.

An imaging device includes a semiconductor substrate, a photoelectric conversion layer located above the semiconductor substrate, a first signal detection transistor that includes a first gate electrode above the semiconductor substrate and that outputs a signal corresponding to an electric potential of the first gate electrode, a second signal detection transistor that includes a second gate electrode above the semiconductor substrate and that outputs a signal corresponding to an electric potential of the second gate electrode, a first contact plug in contact with the first gate electrode, and a second contact plug in contact with the second gate electrode. The first gate electrode is electrically connected to the photoelectric conversion layer through the first contact plug. The second gate electrode and the second contact plug are electrically insulated from the photoelectric conversion layer.

Provided is a solid-state imaging element provided with a comparator for each column, the solid-state imaging element improving the image quality of image data. The solid-state imaging element includes a first comparison element and a transistor. An input voltage related to the voltage of a vertical signal line is input to a source of the first comparison element, and the first comparison element outputs a drain voltage corresponding to the gate-source voltage from a drain. A signal corresponding to the voltage of the vertical signal line is input to a gate of the transistor, and a source of the transistor is connected to the drain of the first comparison element.

Provided is a solid-state imaging element provided with a comparator for each column, the solid-state imaging element improving the image quality of image data. The solid-state imaging element includes a first comparison element and a transistor. An input voltage related to the voltage of a vertical signal line is input to a source of the first comparison element, and the first comparison element outputs a drain voltage corresponding to the gate-source voltage from a drain. A signal corresponding to the voltage of the vertical signal line is input to a gate of the transistor, and a source of the transistor is connected to the drain of the first comparison element.

The present invention relates to a delta image sensor comprising an arrangement of pixels and a plurality of acquisition circuits corresponding to at least one pixel and formed as part of an integrated circuit. Each acquisition circuit includes at least one sensor circuit comprising a photosensor configured to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor of the at least one pixel; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; at least one digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and at least one digital output circuit configured to generate an event output under the condition of the changed level. A digital representation may be externally written to the digital storage circuit of the at least one pixel.

A delta image sensor comprising an arrangement of pixels and acquisition circuits corresponding to at least one pixel. Each acquisition circuit includes a sensor circuit comprising a photosensor to generate a sensor signal, VSIG, depending on a light signal illuminating the photosensor; at least one analogue to digital conversion, A/D, circuit configured to convert a current VSIG to a digital signal; at least one digital storage circuit configured to store a representation of at least one digital signal corresponding to a previous VSIG; a digital comparison circuit configured to compare the level of the stored representation with the current VSIG to detect whether a changed level is present; and a digital output circuit configured to generate an event output when the level has changed. The repeat rate of the analogue to digital conversion is chosen from one or more repeat rates corresponding to modulation of the light signal.

Proposed are an organic-inorganic composite synthetic resin using a highly flame-retardant organically modified nanoparticle, and a production method thereof. The method for producing the organic-inorganic composite synthetic resin using a highly flame-retardant organically modified nanoparticle a includes the steps of: adding and stirring metal ion-based phosphinate, melamine cyanurate, and nanoclay to a container containing an aqueous or oily solvent, applying ultrasonic waves and high pressure energy to the stirred solution to prepare a highly flame-retardant organically modified silicate solution through a chemical bonding, and then adding a synthetic resin to form synthetic leather and foam used as life consumer goods to the silicate solution, processing and drying it.

An imaging element, an imaging device, and an information processing method are disclosed. In one example, an imaging element includes pixel output units configured for independently setting incident angle directivity for incident light incident through both of an imaging lens and a pinhole. The pixel output units include image restoration pixel output units arranged in a matrix, at least some of the pixel output units having the incident angle directivity both in a row direction and in a column direction of the matrix, and a unidirectional pixel output unit having the incident angle directivity only in the row direction of the matrix or only in the column direction of the matrix.