A solid-state imaging device includes a plurality of pixels each of which includes a photoelectric conversion unit that generates charges by photoelectrically converting light, and a transistor that reads a pixel signal of a level corresponding to the charges generated in the photoelectric conversion unit. A phase difference pixel which is at least a part of the plurality of pixels is configured in such a manner that the photoelectric conversion unit is divided into a plurality of photoelectric conversion units and an insulated light shielding film is embedded in a region for separating the plurality of photoelectric conversion units, which are divided, from each other.

Methods, systems, and apparatuses are provided to perform phase-detection autofocus control. By way of example, the methods can receive luminance values measured by a plurality of sensing elements in a sensor array, and the sensing elements can include imaging pixels and phase-detection pixels. The methods can compare luminance values measured by at least one of the phase-detection pixels to luminance values associated with a subset of the imaging pixels including two or more imaging pixels. The comparison can be performed at extended horizontal density or full horizontal density along a first sensor-array row that includes the at least one phase-detection pixel and the two or more imaging pixels. The methods can also perform a phase-detection autofocus operation based on an outcome of the comparison.

An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a boundary deep trench isolation (BDTI) structure disposed at boundary regions of a pixel region surrounding a photodiode. The BDTI structure has a ring shape from a top view and two columns surrounding the photodiode with the first depth from a cross-sectional view. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel region overlying the photodiode, the MDTI structure extending from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure has three columns with the second depth between the two columns of the BDTI structure from the cross-sectional view. The MDTI structure is a continuous integral unit having a ring shape.

A backside illumination image sensor that includes a semiconductor substrate with a plurality of photoelectric conversion elements and a read circuit formed on a front surface side of the semiconductor substrate, and captures an image by outputting, via the read circuit, electrical signals generated as incident light having reached a back surface side of the semiconductor substrate is received at the photoelectric conversion elements includes: a light shielding film formed on a side where incident light enters the photoelectric conversion elements, with an opening formed therein in correspondence to each photoelectric conversion element, and an on-chip lens formed at a position set apart from the light shielding film by a predetermined distance in correspondence to each photoelectric conversion element. The light shielding film and an exit pupil plane of the image forming optical system achieve a conjugate relation to each other with regard to the on-chip lens.

An image sensor includes a first photoelectric conversion unit that converts light incident through a first opening to an electric charge, a second photoelectric conversion unit that converts light incident through a second opening which is smaller than the first opening to an electric charge, and a signal output wiring that outputs a first signal generated by the electric charge converted by the first photoelectric conversion unit and a second signal generated by the electric charge converted by the second photoelectric conversion unit. The second photoelectric conversion unit is disposed between the second opening and the signal output wiring.

Herein disclosed is an imaging device having an imaging optical system, the device including: an imaging element configured to include a plurality of first pixels and a plurality of second pixels arranged along a predetermined direction; a first processor configured to execute focal detection processing by a phase difference detection system based on charge signals obtained from the plurality of second pixels; and a second processor configured to execute specific processing based on charge signals obtained from the plurality of first pixels, the specific processing being different from the focal detection processing by a phase difference detection system and being necessary for a function of the imaging device.

An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

A photoelectric conversion device in which pixels are arranged in a matrix, wherein each of the pixels includes: at least one pixel electrode, a photoelectric conversion layer, a counter electrode, and a pixel circuit that is connected to the pixel electrode and outputs a signal from the pixel electrode, wherein a pixel circuit group corresponding to a pixel group formed of the pixels positioned adjacent to each other is disposed below a pixel electrode group of the pixel group, wherein the pixel group includes a first pixel, and a second pixel having more independent pixel electrodes than the first pixel, wherein each of the pixel circuits is connected to each of the independent pixel electrodes, and wherein the first pixel overlaps with the pixel circuit that corresponds to the first pixel, and with the pixel circuit that does not correspond to the first pixel in a plan view.

An imaging apparatus is provided which comprises: an imaging unit 22 that captures an image through an optical system and outputs an image signal corresponding to the captured image; a focus detection unit 21 that uses the image signal as the basis to detect a focal state of the optical system at a plurality of focus detection positions set in an image plane of the optical system; a calculation unit 21 that calculates a limit value at a closing side of an aperture value of the optical system as a closing side limit value, the limit value corresponding to a focus detection position when the focus detection unit 21 performs focus detection; and a control unit 21 that, when the focus detection unit 21 performs focus detection, sets the aperture value of the optical system on the basis of the closing side limit value corresponding to the focus detection position for performing focus detection.