Disclosed is a method for capturing images that makes it possible to correct at least partially a memory effect of sensitive elements of a matrix used to capture the images. A corrected image is formed by subtracting, from a captured new raw image, a part of a prior raw image that was captured before the new raw image. The method is particularly suitable for sensitive elements with a first-order transfer function with respect to time, such as bolometers or microbolometers. Correction of the memory effect makes it possible to improve the transfer function and/or reduce a tail effect that is present in the images when scene elements move.

A semiconductor device according to an embodiment includes a plurality of element arrays, a signal-processing circuit, and a comparison-voltage generation circuit. Each element array is selectively connected to a vertical signal line and includes an amplification transistor configured to output a first analog signal on the basis of an input analog voltage and an actual value of variation of a characteristic value of each element array included in the plurality of element arrays. The comparison-voltage generation circuit is configured to output a gradually increasing or gradually decreasing comparison voltage. The signal-processing circuit includes a storage circuit and is configured to compare the first analog signal with the comparison voltage and store a timing at which the comparison voltage and a value of a second analog signal generated by adding a predetermined absolute value to the first analog signal match each other onto the storage circuit.

The present disclosure relates to a camera module capable of achieving a smaller height, a method of manufacturing a camera module, an imaging apparatus, and an electronic apparatus. An imaging device having its imaging surface bonded to a provisional substrate is attached, and the imaging device in that state is joined to a substrate via an electrode having a TSV structure. After the provisional substrate is detached, an IR cut filter (IRCF) on which a light blocking film is printed or jet-dispensed in a region other than the effective pixel region is bonded to the imaging surface via a transparent resin. Because of this, there is no need to provide any sealing glass in the stage before the imaging surface, and the optical length of the lens can be shortened. Thus, a smaller height can be achieved. The present disclosure can be applied to camera modules.

A solid-state imaging device including a photoelectric conversion film provided over a plurality of pixels, a first electrode electrically coupled to the photoelectric conversion film and provided to each pixel, a second electrode opposed to the first electrode, the photoelectric conversion film being interposed between the second electrode and the first electrode, a first electric charge accumulation section, a reset transistor that is provided to each pixel, and an electric potential generator that applies, during a period in which the signal electric charges are accumulated in the first electric charge accumulation section, an electric potential VPD to the first electrode of each of at least one or more pixels, an electric potential difference between the first electrode and the second electrode when the electric potential VPD is applied to the first electrode being smaller than an electric potential difference when a reset electric potential is applied to the first electrode.

A solid state image sensor includes a pixel array, as well as charge-to-voltage converters, reset gates, and amplifiers each shared by a plurality of pixels in the array. The voltage level of the reset gate power supply is set higher than the voltage level of the amplifier power supply. Additionally, charge overflowing from photodetectors in the pixels may be discarded into the charge-to-voltage converters. The image sensor may also include a row scanner configured such that, while scanning a row in the pixel array to read out signals therefrom, the row scanner resets the charge in the photodetectors of the pixels sharing a charge-to-voltage converter with pixels on the readout row. The charge reset is conducted simultaneously with or prior to reading out the signals from the pixels on the readout row.

A solid state imaging device includes: a pixel array unit that has a plurality of pixels 2-dimensionally arranged in a matrix and a plurality of signal lines arranged along a column direction; A/D conversion units that are provided corresponding to the respective signal lines and convert an analog signal output from a pixel through the signal line into a digital signal; and a switching unit that switches or converts the analog signal output through each signal line into a digital signal using any of an A/D conversion unit provided corresponding to the signal line through which the analog signal is transmitted, and an A/D conversion unit provided corresponding to a signal line other than the signal line through which the analog signal is transmitted.

An imaging device includes a pixel region in which a plurality of pixels, each including a photoelectric converter, are arranged, including an effective pixel region, an optical black region covered with a light-shielding film, and a dummy pixel region arranged between the effective pixel region and the optical black region. The pixels arranged in at least the effective pixel region and the optical black region among the plurality of the pixels each include an optical waveguide arranged above the photoelectric converter. The pixels including the optical waveguides are arranged between the effective pixel region and the optical black region so as to be spaced apart from each other by at least a one-pixel pitch.

A semiconductor device is provided as a back-illuminated solid-state imaging device. The device is manufactured by bonding a first semiconductor wafer with a pixel array in a half-finished product state and a second semiconductor wafer with a logic circuit in a half-finished product state together, making the first semiconductor wafer into a thin film, electrically connecting the pixel array and the logic circuit, making the pixel array and the logic circuit into a finished product state, and dividing the first semiconductor wafer and the second semiconductor being bonded together into microchips.

A vision display system for a vehicle includes a rear backup camera, a driver side camera, a passenger side camera, a front camera, and a display system including a video display screen. Rear backup video images derived from image data captured by the rear backup camera may be displayed by the video display screen for no more than ten seconds after shifting of the vehicle transmission of the vehicle out of reverse gear. Upon the engine of the vehicle being first started after initial ignition on of the vehicle, priority may be given to display by the video display screen of rear backup video images. Within two seconds after shifting of the vehicle transmission of the vehicle into reverse gear, rear backup video images may be displayed by the video display screen.

The disclosure extends to methods, systems, and computer program products for producing an image in light deficient environments with luminance and chrominance emitted from a controlled light source.