An organic compound represented by the following general formula [1] is excellent in thermal stability. ##STR00001##
In the general formula [1], R.sub.1 to R.sub.12 are each independently selected from the group consisting of a hydrogen atom and a substituent. Symbol A is selected from the group consisting of a divalent residue of naphthalene, phenanthrene, fluorene, benzofluorene, dibenzofluorene or spirofluorene, and a heteroarylene group having 4 to 12 carbon atoms. Symbol B is selected from the group consisting of an arylene group having 6 to 25 carbon atoms and a heteroarylene group having 4 to 12 carbon atoms. Symbol n is an integer of 0 to 3.

A solid-state imaging device capable of performing encryption processing with enhanced security by quite extremely safely generating unique information and performing encryption processing based on the generated unique information. There is provided a solid-state imaging device including a unique information generation unit that generates predetermined analog information, a unique value generation unit that generates a predetermined unique value based on the predetermined analog information, and an encryption processing unit that performs encryption processing using the predetermined unique value, in which the unique value generation unit includes a detection unit that converts the predetermined analog information into digital information, and a unique value calculation unit that calculates the predetermined unique value using the digital information, in which the solid-state imaging device further includes a high-pass filter that passes a high-frequency signal for at least one of the analog information or the digital information.

A solid-state imaging device includes a photoelectric converter, a transfer gate transistor, and an overflow gate transistor. The photoelectric converter is provided in a semiconductor substrate and generates photocharge. The transfer gate transistor is provided at a surface of the semiconductor substrate as a vertical transistor and reads the photocharge stored in the photoelectric converter. The overflow gate transistor is provided at the surface of the semiconductor substrate as a planar transistor and transfers the photocharge overflowing from the photoelectric converter.

To reliably and efficiently detect an event.

An imaging device includes: a plurality of photoelectric conversion elements each of which is configured to photoelectrically convert incident light to generate an electric signal; a plurality of detectors each of which is configured to output a detection signal in a case where an absolute value of an amount of change in the electric signal generated by each of the plurality of photoelectric conversion elements exceeds a predetermined threshold value; and a threshold value adjustment unit configured to adjust the threshold value on the basis of a detection situation of the respective detection signals from the plurality of detectors.

An apparatus for analyzing a plant specimen is disclosed which includes a housing assembly adapted to be in i) an open configuration adapted to receive a plant specimen, and ii) a closed configuration wherein ambient light is controlled therein, a light source disposed in or coupled to the housing assembly, the light source adapted to shine light onto or through the plant specimen when the housing assembly is in the closed configuration, and a camera assembly coupled to the housing assembly, the camera assembly having an image sensor adapted to receive light from the plant specimen in i) a transmittance mode where light transmits through the plant specimen, or ii) a reflectance mode where light is reflected from the plant specimen, the image sensor adapted to thereby capture hyperspectral images of the plant specimen.

An imaging element has at least a photoelectric conversion section, a first transistor TR.sub.1, and a second transistor TR.sub.2, the photoelectric conversion section includes a photoelectric conversion layer 13, a first electrode 11, and a second electrode 12, the imaging element further has a first photoelectric conversion layer extension section 13A, a third electrode 51, and a fourth electrode 51C, the first transistor TR.sub.1 includes the second electrode 12 that functions as one source/drain section, the third electrode that functions as a gate section 51, and the first photoelectric conversion layer extension section 13A that functions as the other source/drain section, and the first transistor TR.sub.1 (TR.sub.rst) is provided adjacent to the photoelectric conversion section.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

There is provided in one embodiment an apparatus having an image sensor array. In one embodiment, the image sensor array can include monochrome pixels and color sensitive pixels. The monochrome pixels can be pixels without wavelength selective color filter elements. The color sensitive pixels can include wavelength selective color filter elements.

An apparatus according to the present invention in which a first substrate including a photoelectric conversion element and a gate electrode of a transistor, and a second substrate including a peripheral circuit portion are placed upon each other. The first substrate does not include a high-melting-metal compound layer, and the second substrate includes a high-melting-metal compound layer.

Provided is an imaging unit including an imaging section that includes a pixel capable of performing charge accumulation a plurality of times in response to an imaging instruction for generating one frame of image data; a storage section that stores a pixel signal based on output from the pixel; an updating section that updates the pixel signal already stored in the storage section by performing an integration process to integrate the pixel signal output from the pixel as a result of a new charge accumulation and the pixel signal already stored in the storage section; and a control section that controls whether the updating section performs the update, for each of a plurality of pixel groups that each include one or more pixels.