Distance measurement accuracy is improved while an increase in power consumption is suppressed. A solid-state imaging device includes a first pixel (210) that detects an address event based on incident light, and a second pixel (310) that generates information on a distance to an object based on the incident light. The second pixel generates the information on the distance to the object when the first pixel detects the address event.

A semiconductor device that has low power consumption and is capable of performing a product-sum operation is provided. The semiconductor device includes first and second cells, a first circuit, and first to third wirings. Each of the first and second cells includes a capacitor, and a first terminal of each of the capacitors is electrically connected to the third wiring. Each of the first and second cells has a function of feeding a current based on a potential held at a second terminal of the capacitor, to a corresponding one of the first and second wirings. The first circuit is electrically connected to the first and second wirings and stores currents I1 and I2 flowing through the first and second wirings. When the potential of the third wiring changes and accordingly the amount of current of the first wiring changes from I1 to I3 and the amount of current of the second wiring changes from I2 to I4, the first circuit generates a current with an amount I1-I2-I3+I4. Note that the potential of the third wiring is changed by firstly inputting a reference potential to the third wiring and then inputting a potential based on internal data or a potential based on information obtained by a sensor.

The present technology relates to an image sensor, an imaging device, and a ranging device capable of performing imaging so that noise is reduced. A photoelectric conversion unit configured to perform photoelectric conversion; a charge accumulation unit configured to accumulate charges obtained by the photoelectric conversion unit; a transfer unit configured to transfer the charges from the photoelectric conversion unit to the charge accumulation unit; a reset unit configured to reset the charge accumulation unit; a reset voltage control unit configured to control a voltage to be applied to the reset unit; and an additional control unit configured to control addition of capacitance to the charge accumulation unit are included. The charge accumulation unit includes a plurality of regions. The present technology can be applied to, for example, an imaging device that captures an image and a ranging device that performs ranging.

Provided is a pixel array including a plurality of pixels, each of which includes a photodiode configured to generate a photocharge in a frame including a plurality of unit frames, a floating diffusion node configured to receive the photocharge, a first storage capacitor configured to receive and store a first photocharge generated by the photodiode through the floating diffusion node during a first unit accumulation time period in each of the plurality of unit frames, and a second storage capacitor configured to receive and store a second photocharge generated by the photodiode through the floating diffusion node during a second unit accumulation time period in each of the plurality of unit frames.

A solid-state imaging element including a well improves area efficiency while reducing malfunction of a circuit on the well. The solid-state imaging element includes a first well, a second well, a first circuit, and a second circuit. The first well contains an impurity having a polarity identical to a polarity of an impurity in a substrate. The second well contains an impurity having a polarity identical to the polarity of the impurity in the substrate and is disposed adjacent to the first well. The first circuit is disposed on the first well and generates noise in a predetermined period. The second circuit is disposed on the second well and generates noise in a period different from the predetermined period.

An image sensor includes: a pixel substrate that includes a plurality of pixels each having a photoelectric conversion unit that generates an electric charge through photoelectric conversion executed on light having entered therein and an output unit that generates a signal based upon the electric charge and outputs the signal; and an arithmetic operation substrate that is laminated on the pixel substrate and includes an operation unit that generates a corrected signal by using a reset signal generated after the electric charge in the output unit is reset and a photoelectric conversion signal generated based upon an electric charge generated in the photoelectric conversion unit and executes an arithmetic operation by using corrected signals each generated in correspondence to one of the pixels.

Imaging devices are disclosed. In one example, an imaging device includes a photoelectric conversion unit with plural photoelectric conversion elements, a detector that outputs a detection signal indicating whether or not an amount of change in the electric signal of each of the photoelectric conversion elements exceeds a predetermined threshold value, a pixel signal generation unit that generates a pixel signal on the basis of the electric signal, a transfer controller that controls transfer of the electric signal to the pixel signal generation unit, and an analog-to-digital converter that converts the pixel signal into a digital signal. The low-potential-side reference potentials of the photoelectric conversion unit, the detector, the pixel signal generation unit, and the analog-to-digital converter, and the off-potential of the transfer controller include three or more potentials having different potential levels.

An image sensor, electronic device and method thereof that performs on-sensor multiresolution deep neural network (DNN) processing, such as for gesture recognition. The image data is transformed into first resolution type image data and second resolution type image data. Based on detecting the first resolution type image data includes a predetermined object, processing the second resolution type image data using the second resolution type image data as input into the second DNN.

A solid-state imaging device including a photoelectric conversion film provided over a plurality of pixels, a first electrode electrically coupled to the photoelectric conversion film and provided to each pixel, a second electrode opposed to the first electrode, the photoelectric conversion film being interposed between the second electrode and the first electrode, a first electric charge accumulation section, a reset transistor that is provided to each pixel, and an electric potential generator that applies, during a period in which the signal electric charges are accumulated in the first electric charge accumulation section, an electric potential VPD to the first electrode of each of at least one or more pixels, an electric potential difference between the first electrode and the second electrode when the electric potential VPD is applied to the first electrode being smaller than an electric potential difference when a reset electric potential is applied to the first electrode.

An image sensor includes: a first imaging region that captures an image of light entering through an optical system under a first imaging condition and generates a detection signal to perform focus detection of the optical system; and a second imaging region that captures an image of the light entering through the optical system under a second imaging condition other than the first imaging condition and generates an image signal.