The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels (110) arranged in a matrix, in which each of the pixels includes a first semiconductor layer (35), a photoelectric conversion section (PD1) disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode (37) disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring (61, 62, 63, 64) extending from the second surface of the first semiconductor layer, a floating diffusion region (FD1) connected to the first semiconductor layer via the wiring, and a first gate (11) that forms a potential barrier in a charge flow path from the first semiconductor layer to the floating diffusion region via the wiring.

The quantum efficiency can be improved. A solid-state imaging device according to an embodiment includes: a plurality of pixels (110) arranged in a matrix, in which each of the pixels includes a first semiconductor layer (35), a photoelectric conversion section (PD1) disposed on the first semiconductor layer on a side of a first surface, an accumulation electrode (37) disposed on the first semiconductor layer close to a side of a second surface on a side opposite to the first surface, a wiring (61, 62, 63, 64) extending from the second surface of the first semiconductor layer, a floating diffusion region (FD1) connected to the first semiconductor layer via the wiring, and a first gate (11) that forms a potential barrier in a charge flow path from the first semiconductor layer to the floating diffusion region via the wiring.

Provided are a solid-state imaging device, a method for driving a solid-state imaging device and an electronic apparatus capable not only of having advanced global shutter and autofocus functions but also of sufficiently achieving single exposure high dynamic range (SEHDR) performance, thereby substantially realizing enhanced dynamic range and frame rate.

In an image capturing mode, a reading part controls driving of a conversion signal reading part such that the conversion signal reading part keeps first and second transfer transistors in a conduction state in the same transfer period and performs a read-out operation on a pixel signal corresponding to a sum of charges stored in a first photodiode and charges stored in a second photodiode with a first conversion gain and subsequently with a second conversion gain.

To generate multiple types of images of the same subject, an electronic apparatus includes a drive control unit that controls the drive of an image sensor, a division unit that divides an image capture region of the image sensor into at least first and second regions, and an image generation unit that generates a first image by capturing an image of the same subject in the first region and generates a second image by capturing an image of the same subject in the second region.

An imaging device includes a first electrode, a charge accumulating electrode arranged with a space from the first electrode, an isolation electrode arranged with a space from the first electrode and the charge accumulating electrode and surrounding the charge accumulating electrode, a photoelectric conversion layer formed in contact with the first electrode and above the charge accumulating electrode with an insulating layer interposed therebetween, and a second electrode formed on the photoelectric conversion layer. The isolation electrode includes a first isolation electrode and a second isolation electrode arranged with a space from the first isolation electrode, and the first isolation electrode is positioned between the first electrode and the second isolation electrode.

An imaging device which has a stacked-layer structure and can be manufactured easily is provided. The imaging device includes a signal processing circuit, a memory device, and an image sensor. The imaging device has a stacked-layer structure in which the memory device is provided above the signal processing circuit, and the image sensor is provided above the memory device. The signal processing circuit includes a transistor formed on a first semiconductor substrate, the memory device includes a transistor including a metal oxide in a channel formation region, and the image sensor includes a transistor formed on a second semiconductor substrate.

A first circuit constituting a plurality of first circuit in a first direction, which stores a signal output from a pixel having a photoelectric conversion unit; a first control unit to which the plurality of first circuits are connected and outputs a first signal for outputting signals stored in the plurality of first circuits; a readout unit that reads out the signal output from the first circuit; a plurality of second circuits that are connected to the first control unit, a plurality of sets of the plurality of second circuits in the first direction; and a second control unit that controls a readout of the signal by the readout unit. The first control unit outputs a second signal to the plurality of second circuits together with the first signal; and the second control unit controls the readout of the signal by the readout unit, based on the second signal.

A first circuit constituting a plurality of first circuit in a first direction, which stores a signal output from a pixel having a photoelectric conversion unit; a first control unit to which the plurality of first circuits are connected and outputs a first signal for outputting signals stored in the plurality of first circuits; a readout unit that reads out the signal output from the first circuit; a plurality of second circuits that are connected to the first control unit, a plurality of sets of the plurality of second circuits in the first direction; and a second control unit that controls a readout of the signal by the readout unit. The first control unit outputs a second signal to the plurality of second circuits together with the first signal; and the second control unit controls the readout of the signal by the readout unit, based on the second signal.

An imaging system according to the present disclosure includes: an imaging device that is mounted in a vehicle, and captures and generates an image of a peripheral region of the vehicle; and a processing device that is mounted in the vehicle, and executes processing related to a function of controlling the vehicle on the basis of the image. The imaging device includes: a first control line, a first voltage generator that applies a first voltage to the first control line, a first signal line, a plurality of pixels that applies a pixel voltage to the first signal line, a first dummy pixel that applies a voltage corresponding to the first voltage of the first control line to the first signal line in a first period, a converter including a first converter that performs AD conversion on the basis of a voltage of the first signal line in the first period to generate a first digital code, and a diagnosis section that performs diagnosis processing on the basis of the first digital code. The above-described processing device restricts the function of controlling the vehicle on the basis of a result of the diagnosis processing.

Provided is a 3D depth sensing system and method of providing an image based on a hybrid sensing array. The 3D sensing system including a light source configured to emit light, a hybrid sensing array comprising a 2D sensing region configured to detect ambient light reflected from an object and a 3D depth sensing region configured to detect the light emitted by the light source and reflected from the object, a metalens on the hybrid sensing array, the metalens being configured to direct the ambient light reflected from the object towards the 2D sensing region, and to direct the light emitted by the light source and reflected from the object towards the 3D depth sensing region, and a processing circuit configured to combine 2D image information provided by the 2D sensing region and 3D information provided by the 3D depth sensing region to generate a combined 3D image.