Provided is a 3D depth sensing system and method of providing an image based on a hybrid sensing array. The 3D sensing system including a light source configured to emit light, a hybrid sensing array comprising a 2D sensing region configured to detect ambient light reflected from an object and a 3D depth sensing region configured to detect the light emitted by the light source and reflected from the object, a metalens on the hybrid sensing array, the metalens being configured to direct the ambient light reflected from the object towards the 2D sensing region, and to direct the light emitted by the light source and reflected from the object towards the 3D depth sensing region, and a processing circuit configured to combine 2D image information provided by the 2D sensing region and 3D information provided by the 3D depth sensing region to generate a combined 3D image.

An image sensor, electronic device and method thereof that performs on-sensor single object class detection using an on-sensor single object class detection deep neural network (DNN), such as a face detection DNN. The single object class detection DNN includes a pixel array layer configured to capture an image and transfer image data of the captured image, and a logic and single object class detection deep neural network (DNN) layer that receives the image data directly from the pixel array layer and outputs the image data with the single object class detection data to a communication bus of an electronic device.

An image sensor, electronic device and method thereof that performs on-sensor single object class detection using an on-sensor single object class detection deep neural network (DNN), such as a face detection DNN. The single object class detection DNN includes a pixel array layer configured to capture an image and transfer image data of the captured image, and a logic and single object class detection deep neural network (DNN) layer that receives the image data directly from the pixel array layer and outputs the image data with the single object class detection data to a communication bus of an electronic device.

A solid-state image sensor includes a first semiconductor, and a second semiconductor having a composition different from that of the first composition and electrically connected to the first semiconductor. The first semiconductor includes a photodiode that converts light incident on the photodiode into charge carriers, first carrier storages that store the charge carriers, and a transfer gate that controls transfer the charge carriers to a selected one of the first carrier storages. The second semiconductor includes second carrier storages and a potential detection node. The second carrier storages each store charge carriers based on the charge carriers stored in a corresponding one of the first carrier storages. The potential detection node detects the electric potential of each of the second carrier storages. The solid-state image sensor further includes a reset transistor that resets the electric potential of each of the first carrier storages to a predetermined electric potential.

An imaging apparatus according to an embodiment includes: an imaging unit having a pixel region in which a plurality of pixels is arranged; a readout controller that controls readout of pixel signals from pixels included in the pixel region; a first unit-of-readout setting unit that sets a unit of readout as a part of the pixel region, for which the readout controller performs readout of the pixel signal; an image output unit that outputs a first image based on the pixel signal read out from the unit of readout to a subsequent stage; a second unit-of-readout controller that controls the unit of readout in which the readout controller performs readout of the pixel signal; and a recognition unit that learns training data for each of the units of readout, performs a recognition process on the pixel signal for each of the units of readout, and outputs a recognition result.

An imaging apparatus according to an embodiment includes: an imaging unit having a pixel region in which a plurality of pixels is arranged; a readout controller that controls readout of pixel signals from pixels included in the pixel region; a first unit-of-readout setting unit that sets a unit of readout as a part of the pixel region, for which the readout controller performs readout of the pixel signal; an image output unit that outputs a first image based on the pixel signal read out from the unit of readout to a subsequent stage; a second unit-of-readout controller that controls the unit of readout in which the readout controller performs readout of the pixel signal; and a recognition unit that learns training data for each of the units of readout, performs a recognition process on the pixel signal for each of the units of readout, and outputs a recognition result.

An integrated device, the device including: a first level including a first mono-crystal layer, the first mono-crystal layer including a plurality of single crystal transistors; an overlying oxide disposed on top of the first level; a second level including a second mono-crystal layer, the second level overlaying the oxide, where the second mono-crystal layer includes a plurality of semiconductor devices; a third level overlaying the second level, where the third level includes a plurality of image sensors, where the first level includes a plurality of landing pads, where the second level is bonded to the first level, where the bonded includes an oxide to oxide bond; and an isolation layer disposed between the second mono-crystal layer and the third level.

An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

An image sensing device includes a pixel array including image sensing pixels, phase detection pixel pairs disposed between the image sensing pixels, photoelectric conversion regions corresponding to the image sensing pixels and the phase detection pixels, device isolation structures isolating the photoelectric conversion regions, color filters corresponding to the image sensing pixels and the phase detection pixel pairs, a first grid structure disposed between a color filter of a first image sensing pixel and a color filter of an adjacent first phase detection pixel pair and shifted by a first distance from a first device isolation structure disposed between the first image sensing pixel and the first phase detection pixel pair, and a second grid structure disposed in color filters of the first phase detection pixel pair and shifted by a second distance from a second device isolation structure disposed between the first phase detection pixel pairs.

The present technology relates to an imaging element that can reduce noise. The imaging element includes: a photoelectric conversion element; a first amplification element that amplifies a signal from the photoelectric conversion element; a second amplification element that amplifies an output from the first amplification element; an offset element provided between the first amplification element and the second amplification element; a first reset element that resets the first amplification element; and a second reset element that resets the second amplification element. The offset element is a capacitor. A charge is accumulated in the offset element via a feedback loop of an output from the second amplification element, and an offset bias is generated. The present technology can be applied to an imaging element.