An imaging device of the present disclosure includes a plurality of pixel circuits and a controller. The plurality of pixel circuits each includes: a light-receiving circuit that generates a pixel signal corresponding to an amount of received light; a comparator that generates a first comparison signal by comparing the pixel signal with a reference signal having a ramp waveform; a delay circuit that generates a second comparison signal by delaying the first comparison signal; a selection circuit that selects one of the first comparison signal and the second comparison signal and outputs a selected signal as a third comparison signal; and a latch that latches a time code at a timing based on the third comparison signal. The controller controls an operation of the selection circuit in each of the plurality of pixel circuits.

An imaging device of the present disclosure includes a plurality of pixel circuits and a controller. The plurality of pixel circuits each includes: a light-receiving circuit that generates a pixel signal corresponding to an amount of received light; a comparator that generates a first comparison signal by comparing the pixel signal with a reference signal having a ramp waveform; a delay circuit that generates a second comparison signal by delaying the first comparison signal; a selection circuit that selects one of the first comparison signal and the second comparison signal and outputs a selected signal as a third comparison signal; and a latch that latches a time code at a timing based on the third comparison signal. The controller controls an operation of the selection circuit in each of the plurality of pixel circuits.

The present technology relates to an imaging element and an electronic device capable of preventing light from leaking into an adjacent pixel. A semiconductor layer in which a first pixel in which a read pixel signal is used to generate an image, and a second pixel in which the read pixel signal is not used to generate an image are arranged, and a wiring layer stacked on the semiconductor layer are provided, and a structure of the first pixel and a structure of the second pixel are different. A first inter-pixel separation portion that separates the semiconductor layer of the adjacent first pixels, and a second inter-pixel separation portion that separates the semiconductor layer of the adjacent second pixels are further provided, and the first inter-pixel separation portion and the second inter-pixel separation portion are provided with different structures. The present technology can be applied to an imaging element in which dummy pixels are arranged.

The present technology relates to an imaging element and an electronic device capable of preventing light from leaking into an adjacent pixel. A semiconductor layer in which a first pixel in which a read pixel signal is used to generate an image, and a second pixel in which the read pixel signal is not used to generate an image are arranged, and a wiring layer stacked on the semiconductor layer are provided, and a structure of the first pixel and a structure of the second pixel are different. A first inter-pixel separation portion that separates the semiconductor layer of the adjacent first pixels, and a second inter-pixel separation portion that separates the semiconductor layer of the adjacent second pixels are further provided, and the first inter-pixel separation portion and the second inter-pixel separation portion are provided with different structures. The present technology can be applied to an imaging element in which dummy pixels are arranged.

A semiconductor apparatus includes a stack of a first chip having a plurality of pixel circuits arranged in a matrix form and a second chip having a plurality of electric circuit arranged in a matrix form. A wiring path between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit or a positional relationship between a semiconductor element configuring the pixel circuit and a semiconductor element configuring the electric circuit is differentiated among the electric circuits.

The present disclosure relates to a method and system for imaging a scene. The method includes generating a shutter pattern and applying the shutter pattern to a photodetector array. The system includes a sensor architecture in three dimensions, where elements of the sensor architecture are stacked in two or more layers. Some elements of the sensor architecture include a photodetector array, register array, a generator to generate shutter patterns, readout circuitry, and an ISP.

To improve the image quality of image data in a solid-state imaging device that reads a signal according to a potential difference between respective floating diffusion regions of a pair of pixels. A pixel unit is provided with a plurality of rows each including a plurality of pixels. A readout row selection unit selects any of the plurality of rows as a readout row every time a predetermined period elapses, and causes each of the plurality of pixels in the readout row to generate a signal potential according to a received light amount. A reference row selection unit selects a row different from a previous row from among the plurality of rows as a current reference row every time the predetermined period elapses, and causes each of the plurality of pixels in the reference row to generate a predetermined reference potential. A readout circuit unit reads a voltage signal according to a difference between the signal potential and the reference potential.

An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.

An image sensor includes a pixel array that includes a first pixel group located in a first row and including a first select transistor and a first floating diffusion region, a second pixel group located in a second row and including a second select transistor and a second floating diffusion region, and a column line connected to both the first pixel group and the second pixel group. While charges generated by a photoelectric conversion element of the first pixel group are transferred to the first floating diffusion region, the first select transistor is turned off, the second select transistor is turned on, and a first voltage is applied to the column line through the second select transistor. A photoelectric conversion element of the second pixel group generates charges prior to the photoelectric conversion element of the first pixel group, so as to be transferred to the second floating diffusion region.

An image sensor includes: a first readout circuit that reads out a first signal, being generated by an electric charge resulting from a photoelectric conversion, to a first signal line; a first holding circuit that holds a voltage based on an electric current from a power supply circuit; and a first electric current source that supplies the first signal line with an electric current generated by the voltage held in the first holding circuit, wherein: the first holding circuit holds the voltage based on the electric current from the power supply circuit when the first signal is not read out to the first signal line by the first readout circuit.