An infrared light source includes a resistor formed on the side of one principal surface of a support substrate via an insulating film; a plurality of projections formed on the one principal surface side of the support substrate by etching the support substrate; and a protection film stacked as a layer on top of the resistor and projections. The resistor is disposed on the same plane in a region which forms an infrared emission portion in which the plurality of projections and the resistor are formed, and infrared is efficiently emitted from the region in which are formed the projections by heat generated by energizing the resistor.

Certain example embodiments relate to systems and/or methods for preferentially and selectively heat treating conductive coatings such as ITO using specifically tuned near infrared-short wave infrared (NIR-SWIR) radiation. In certain example embodiments, the coating is preferentially heated, thereby improving its properties while at the underlying substrate is kept at low temperatures. Such techniques are advantageous for applications on glass and/or other substrates, e.g., where elevated substrate temperatures can lead to stress changes that adversely effect downstream processing (such as, for example, cutting, grinding, etc.) and may sometimes even result in substrate breakage or deformation. Selective heating of the coating may in certain example embodiments be obtained by using IR emitters with peak outputs over spectral wavelengths where the conductive coating (or the conductive layer(s) in the conductive coating) is significantly absorbing but where the substrate has reduced or minimal absorption.

An example heating apparatus comprises a light emitting diode (LED) array comprising at least one LED to heat a target object. The heating apparatus further comprises a heatsink thermally coupled to the LED array to dissipate heat from the LED array. The heatsink comprises a refrigerant path including an input to and an output from the refrigerant path to pass cooled refrigerant therethrough.

A metamaterial pixel providing an electromagnetic emitter and/or en electromagnetic detector operating within a limited bandwidth. The metamaterial pixel is comprised of plasmonic elements arranged within a periodic photonic crystal array providing an electromagnetic emitter and/or an electromagnetic detector adapted in embodiments for operation at selected bandwidths within the wavelength range of visible out to a millimeter. Performance of the pixel in applications is enhanced with nanowires structured to enhance phononic scattering providing a reduction in thermal conductivity. In embodiments multiple pixels are adapted to provide a spectrometer for analyzing thermal radiation or electromagnetic reflection from a remote media. In other embodiments emitter and detector pixels are adapted to provide an absorptive spectrophotometer. In other embodiments one or more of metamaterial pixels are adapted as the transmitter and/or receiver within a communication system. In a preferred embodiment the pixel is fabricated using a silicon SOI starting wafer.

An infrared emitter is provided. The infrared emitter includes a substrate made of an electrically insulating material. The substrate includes a surface that contacts a printed conductor made of a resistor material that is electrically conducting and generates heat when current flows through it. The electrically insulating material includes an amorphous matrix component into which an additional component is embedded that absorbs in the spectral range of infrared radiation. At least a part of the surface is configured with a cover layer made of porous glass, whereby the printed conductor is embedded, at least in part, in the cover layer.

An apparatus for heating an insulation fluid in a medium-voltage or high-voltage switchgear comprises an infrared source which is adapted to emit infrared radiation of at least one wavelength. Thus, at least one vibrational or rotational mode of at least one component of the insulation fluid is excited by absorption of at least a part of the infrared radiation, and condensation of the insulation fluid is efficiently prevented by this direct heating of the insulation fluid. A closed loop temperature regulator is used to heat only when required. A circulator in a heating chamber further provides for a mixing of the insulation fluid, thus preventing steep temperature gradients.

A multilayer photonic stack comprising a lower plurality of alternating layers comprising at least A and B and an upper plurality of alternating layers comprising at least C and D, layer A comprises at least one of Al, Au, W, Ag, Ni, Ti, Pt, and Cr, layer B comprises at least one of Al.sub.2O.sub.3, AlN, MgO, SiO.sub.2, TiO.sub.2, Si.sub.3N.sub.4, MgF.sub.2, Ta.sub.2O.sub.5, SiC, Si, Ge, and Indium Tin Oxide (ITO), and layers C and D comprise at least one of Al.sub.2O.sub.3, AlN, MgO, SiO.sub.2, TiO.sub.2, Si.sub.3N.sub.4, MgF.sub.2, Ta.sub.2O.sub.5, SiC, Si, Ge, and Indium Tin Oxide (ITO).

An infrared processing device includes an infrared heater including a heating body and a metamaterial structure capable of, when thermal energy is input from the heating body, radiating infrared rays which have a maximum peak of a non-Planck distribution and whose maximum peak has a peak wavelength of 2 m or more and 7 m or less; an inner tube that surrounds the infrared heater, contains at least one of a fluorine-based material having a CF bond and calcium fluoride, and transmits infrared rays of the peak wavelength; and an outer tube that surrounds the inner tube and forms, between the inner tube and the outer tube, an object channel through which a processing object is allowed to flow.

A method for producing an infrared emitter arrangement is provided. The method includes providing a carrier. The carrier includes at least one infrared emitter structure at a first side of the carrier and at least one cutout at a second side of the carrier, said second side being situated opposite the first side of the carrier, wherein the at least one cutout extends from the second side of the carrier in the direction of the at least one infrared emitter structure. The method further includes securing an infrared filter layer structure at the second side of the carrier in such a way that the at least one cutout separates the at least one infrared emitter structure from the infrared filter layer structure.

A thermal emitter module includes: a thermal emitter; a housing that houses the thermal emitter; and a support member interposed between the thermal emitter and the housing and supporting the thermal emitter, in which a constituent material of the support member contains at least one of an oxide or a nitride.