A method of forming a microwave applicator comprising forming a body comprising dielectric material so that there is a void in the dielectric material, and depositing conductive material in the void to form a feed for coupling energy into the dielectric material.

It is the object of the present invention to present a coffee roaster, comprising: a resonant cavity, a heating unit, comprising: (i) at least one microwave oscillator and (ii) at least one beam-steerer, a sensing unit; and a control unit configured to control the microwave oscillator and the bean-steerer and receive data from the sensing unit.

A dielectric constant estimation device which can estimate a dielectric constant of an object with high accuracy in a non-contact state even when a shape of the object is indefinite, and a microwave heating device equipped with the dielectric constant estimation device. The dielectric constant estimation device includes a transmitting antenna and a receiving antenna which can switch a polarized wave of an electromagnetic wave between a TE wave and a TM wave. Based on a reflected wave of the TE wave and a reflected wave of the TM wave from the object, the dielectric constant estimation device calculates a TM/TE reflection ratio, and compares the calculated TM/TE reflection ratio and dielectric constant data of theoretical values stored in a memory part in advance in the form of database with each other so that a dielectric constant of the object is estimated.

A dielectric constant estimation device which can estimate a dielectric constant of an object with high accuracy in a non-contact state even when a shape of the object is indefinite, and a microwave heating device equipped with the dielectric constant estimation device. The dielectric constant estimation device includes a transmitting antenna and a receiving antenna which can switch a polarized wave of an electromagnetic wave between a TE wave and a TM wave. Based on a reflected wave of the TE wave and a reflected wave of the TM wave from the object, the dielectric constant estimation device calculates a TM/TE reflection ratio, and compares the calculated TM/TE reflection ratio and dielectric constant data of theoretical values stored in a memory part in advance in the form of database with each other so that a dielectric constant of the object is estimated.

Provided is a microwave processing apparatus that can irradiate an object with microwaves more uniformly. A microwave processing apparatus 1 includes a cavity that has a cylinder-like shape, and includes an internal space for accommodating an object, the cavity being provided with a microwave passage area in a partial region in an axial direction; a microwave generator; a rotary member that is provided on an outer circumferential side of the cavity so as to be rotatable, and includes, on an outer circumferential side of the microwave passage area, a cylinder-like member having a plurality of areas through which microwaves can pass; and a cover member that is provided while covering the entire cylinder-like member in a circumferential direction, and forms, on an outer circumferential side of the cylinder-like member, a wave guidepath for the microwaves introduced from the microwave generator.

Provided is a microwave processing apparatus that can irradiate an object with microwaves more uniformly. A microwave processing apparatus 1 includes a cavity that has a cylinder-like shape, and includes an internal space for accommodating an object, the cavity being provided with a microwave passage area in a partial region in an axial direction; a microwave generator; a rotary member that is provided on an outer circumferential side of the cavity so as to be rotatable, and includes, on an outer circumferential side of the microwave passage area, a cylinder-like member having a plurality of areas through which microwaves can pass; and a cover member that is provided while covering the entire cylinder-like member in a circumferential direction, and forms, on an outer circumferential side of the cylinder-like member, a wave guidepath for the microwaves introduced from the microwave generator.

A fast annealing equipment is applicable to the annealing treatment of silicon carbide wafers. The fast annealing equipment comprises a variable frequency microwave power source system, a resonant chamber heating system and a measurement and control system. The variable frequency microwave power source system uses a solid state power amplifier and has the flexibility of fast frequency sweep during heat treatment to compensate for resonant frequency changes due to load effect caused by temperature changes in a material to be annealed. In order to improve an energy efficiency and provide a sufficient microwave energy uniform area, the TM.sub.010 resonant chamber structure can be used to anneal 4-inch to 8-inch silicon carbide wafers. The measurement and control system combines software and hardware to form an automatic system with instant feedback to provide further flexibility, stability and reliability for the entire equipment.

A fast annealing equipment is applicable to the annealing treatment of silicon carbide wafers. The fast annealing equipment comprises a variable frequency microwave power source system, a resonant chamber heating system and a measurement and control system. The variable frequency microwave power source system uses a solid state power amplifier and has the flexibility of fast frequency sweep during heat treatment to compensate for resonant frequency changes due to load effect caused by temperature changes in a material to be annealed. In order to improve an energy efficiency and provide a sufficient microwave energy uniform area, the TM.sub.010 resonant chamber structure can be used to anneal 4-inch to 8-inch silicon carbide wafers. The measurement and control system combines software and hardware to form an automatic system with instant feedback to provide further flexibility, stability and reliability for the entire equipment.

Disclosed is a substrate treating apparatus, including: a process chamber in which an inner space for treating a substrate is formed; an ion blocker for dividing the inner space into a plasma generating space and a treatment space; a substrate support unit for supporting a substrate in the treatment space; an exhaust unit for exhausting the treatment space; an anneal source positioned above the ion blocker and transmitting energy for annealing to the substrate through the ion blocker; and a gas supply unit for supplying process gas to the plasma generating space, in which the ion blocker includes: a body which is shaped like a disk, is made of a material through which microwaves are transmittable, and is formed with a plurality of through-holes; and a transparent conductive oxide film provided on at least one of an upper surface and a lower surface of the body in a first thickness or less.

A microwave cooking appliance includes a cooking chamber delimited by a cooking chamber wall, and a microwave apparatus configured to introduce microwaves into the cooking chamber. The microwave apparatus includes a patch antenna having a planar base body and a planar emission body, which are electrically insulated from one another. The emission body is configured to cover the base body at a distance and capable of being fed with microwave energy, with the base body corresponding to a region of the cooking chamber wall.