A light-emitting element includes: a first electrode; a second electrode; and a light-emitting layer between the first electrode and the second electrode, wherein the light-emitting layer includes quantum dots and a cyclic organic compound, and at least some of atoms that form a ring of the cyclic organic compound are coordinated to the quantum dots.

A method for manufacturing a light-emitting device includes performing application, performing temperature raising, and performing first light irradiation. In the performing application, a solution including quantum dots, a ligand, an inorganic precursor, and a solvent is applied on a position overlapping with the substrate. The quantum dots each includes a core and a first shell coating the core. In the performing temperature raising, a temperature is raised until the ligand melts and the solvent vaporizes after the performing application. In the performing first light irradiation, light irradiation is performed after the performing temperature raising. In the performing first light irradiation, the inorganic precursor is epitaxially grown around the first shell to form a second shell coating the first shell, and an inorganic film in which the inorganic precursor is epitaxially grown at an interface between the quantum dot layer and the first charge transport layer is formed.

A method for manufacturing a light-emitting device includes forming the quantum dot layer, wherein the forming the quantum dot layer includes performing first application of applying, on a position overlapping with the substrate, a first solution including quantum dots, a ligand, a first inorganic precursor, and a first solvent, the quantum dots each including a core and a first shell coating the core, the ligand coordinating with each of the quantum dots, performing temperature raising of raising a temperature until the ligand melts and the first solvent vaporizes after the performing first application, performing first temperature lowering of lowering a temperature to a melting point of the ligand or lower after the performing temperature raising, and performing first light irradiation of epitaxially growing the first inorganic precursor around the first shell by first light irradiation after the performing first temperature lowering to form a second shell coating the first shell.

A method for manufacturing a light-emitting device includes forming the quantum dot layer, wherein the forming the quantum dot layer includes performing first application of applying, on a position overlapping with the substrate, a first solution including quantum dots, a ligand, a first inorganic precursor, and a first solvent, the quantum dots each including a core and a first shell coating the core, the ligand coordinating with each of the quantum dots, performing temperature raising of raising a temperature until the ligand melts and the first solvent vaporizes after the performing first application, performing first temperature lowering of lowering a temperature to a melting point of the ligand or lower after the performing temperature raising, and performing first light irradiation of epitaxially growing the first inorganic precursor around the first shell by first light irradiation after the performing first temperature lowering to form a second shell coating the first shell.

A display device includes a plurality of pixels. Each of the plurality of pixels includes a first electrode, a second electrode, a light-emitting layer provided between the first electrode and the second electrode, a first charge transport layer provided between the first electrode and the light-emitting layer, and a second charge transport layer provided between the second electrode and the light-emitting layer. The first charge transport layer includes a first charge transport material and a first nanofiber.

A display device includes a first electrode, a second electrode, a light-emitting layer provided between the first electrode and the second electrode, and a charge transport layer provided between the first electrode and the second electrode and containing a charge transport material configured to transport a charge to the light-emitting layer. At least one layer of the light-emitting layer and the charge transport layer is a function layer including a nanofiber and a photosensitive material.

A display device includes: ferritin encaging a first quantum dot and modified with a first peptide bound to a first pixel electrode; and ferritin encaging a second quantum dot and modified with a second peptide bound to a second pixel electrode. A first metal material and a second metal material are of different types.

A light-emitting element includes a first light-emitting layer including a first quantum dot and a second light-emitting layer including a second quantum dot provided between the cathode electrode and an anode electrode in order from the cathode electrode, the first quantum dot has a core-shell structure including a first core and a first shell, the second quantum dot has a core-shell structure including a second core and a second shell, and an energy level at a lower end of a conduction band of the first core is higher than an energy level at a lower end of a conduction band of the second core.

A light-emitting element according to the disclosure includes an anode electrode, a cathode electrode, and a first light-emitting layer that includes a plurality of first quantum dots and emits light of a first color. The first light-emitting layer is provided between the anode electrode and the cathode electrode, and each of the plurality of first quantum dots includes a compound containing each of three elements of Zn, Se, and Te. A combination of an average particle size of the plurality of first quantum dots and a composition ratio of the three elements is selected such that the peak wavelength of a light emission spectrum of the first light-emitting layer is greater than 394 nm and equal to or less than 474 nm.

A transistor in which shape defects are unlikely to occur is provided. A transistor with favorable electrical characteristics is provided. A semiconductor device with favorable electrical characteristics is provided. The semiconductor device includes a transistor. The transistor includes a semiconductor layer, a first insulating layer, a metal oxide layer, a functional layer, and a conductive layer. The first insulating layer is positioned over the semiconductor layer. The metal oxide layer is positioned over the first insulating layer. The functional layer is positioned over the metal oxide layer. The conductive layer is positioned over the functional layer. The semiconductor layer, the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer have regions overlapping with each other. In the channel length direction of the transistor, end portions of the first insulating layer, the metal oxide layer, the functional layer, and the conductive layer are positioned inward from an end portion of the semiconductor layer. An etching rate of the functional layer with an etchant containing one or more of phosphoric acid, acetic acid, nitric acid, hydrochloric acid, and sulfuric acid is lower than an etching rate of the conductive layer.