A semiconductor device with favorable electrical characteristics is provided. A highly reliable semiconductor device is provided. The semiconductor device includes a semiconductor layer, a first insulating layer over the semiconductor layer, and a conductive layer over the first insulating layer. The semiconductor layer includes a first region, a pair of second regions, a pair of third regions, and a pair of fourth regions. The second regions sandwich the first region, the third regions sandwich the first region and the second regions, and the fourth regions sandwich the first region, the second regions, and the third regions. The first region includes a region overlapping with the first insulating layer and the conductive layer, the second regions and the third regions each include a region overlapping with the first insulating layer and not overlapping with the conductive layer, and the fourth regions overlap with neither the first insulating layer nor the conductive layer. A thickness of the first insulating layer in regions overlapping with the second regions is substantially equal to a thickness of the first insulating layer in a region overlapping with the first region. A thickness of the first insulating layer in regions overlapping with the third regions is smaller than the thickness of the first insulating layer in the regions overlapping with the second regions.

The present invention relates to a semiconducting light emitting nanoparticle comprising a polymeric layer.

Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.

Provided are a QLED and a method for manufacturing a quantum dot. The QLED comprises a quantum dot, the quantum dot comprises a quantum dot body and ligands arranged on an outer surface of the quantum dot body, wherein the ligands comprises at least one electrochemical inert ligand; a reduction potential of the at least one electrochemical inert ligand is greater than a potential of a bottom of conduction band of the quantum dot body; an oxidation potential of the at least one electrochemical inert ligand is less than a potential of top of a valence band the quantum dot body; and the electrochemical inert ligand accounts for at least 80% of all the ligands on the outer surface of the quantum dot body.

A method for manufacturing a display device, including: a step of applying a first mixture obtained by mixing green quantum dots and a photosensitive resin on a green electron transport layer, an exposure step of pattern-exposing the first mixture to cure a portion of the first mixture, the portion being a green light-emitting layer; a development step of removing an uncured portion of the first mixture and developing the green light-emitting layer; and an etching step of etching the green electron transport layer with an etching solution that is an alkaline solution or an organic solvent using the green light-emitting layer as a mask.

A light-emitting element includes: anode; a cathode; a light-emitting layer, and containing a light-emitting material; a hole-transport layer, and containing an organic hole-transport material; a hole-injection layer disposed between the anode and the hole-transport layer, and containing an inorganic hole-transport material; and an organic layer disposed between the hole-transport layer and the hole-injection layer. The organic layer contains an aromatic compound having: a functional group R.sup.1 capable of chemically bonding to the inorganic hole-transport material; a functional group R.sup.2 that is a functional group containing at an end at least one selected from a hydrogen atom, a nitro group, a cyano group, a halogen group, a carboxyl group, an aldehyde group, a hydroxyl group, an ester bond with one to three carbons, an alkyl group with one to three carbons or an amid group; and an aromatic ring to which each of the R.sup.1 and the R.sup.2 bonds.

An imaging device or a display device that is capable of clearly capturing an image of a fingerprint or the like can be provided. The display device includes a light-receiving element, a light-emitting element, a first substrate, a second substrate, a first resin layer, a second resin layer, and a light-blocking layer. The first resin layer, the second resin layer, and the second substrate are stacked over the first substrate. The light-receiving element and the light-emitting element are positioned between the first substrate and the first resin layer. The light-blocking layer is positioned between the first resin layer and the second resin layer and includes an opening portion overlapping with the light-receiving element. The opening portion in the light-blocking layer is positioned on an inner side of a light-receiving region of the light-receiving element in a plan view, and the width of the opening portion is less than or equal to the width of the light-receiving region. The second substrate is thicker than the first resin layer and the second resin layer. The thickness of a portion of the first resin layer, which overlaps with the light-receiving region of the light-receiving element, is greater than or equal to one time and less than or equal to 10 times as large as the width of the light-receiving region. The second substrate has a higher refractive index than the first resin layer and the second resin layer.

This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element (100) comprises a first insulator layer (111), a second insulator layer (112), and a first phosphor layer (121) of activator-group 4 element codoped zinc sulfide between the first insulator layer (111) and the second insulator layer (112). The first phosphor layer (121) has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.

This disclosure relates to use of group 4 element codoping in a phosphor layer of activator-doped zinc sulfide of a display element, a display element, and a method for manufacturing a display element. The display element (100) comprises a first insulator layer (111), a second insulator layer (112), and a first phosphor layer (121) of activator-group 4 element codoped zinc sulfide between the first insulator layer (111) and the second insulator layer (112). The first phosphor layer (121) has an average atomic percentage of group 4 elements of at least 0.01 atomic percent.

A light-emitting element includes a light-emitting layer including quantum dots, a selectively reflective layer, the selectively reflective layer having a reflection band having a higher reflectivity than a reflectivity of another band, and a wavelength at a long wavelength end in the reflection band of the selectively reflective layer is longer than a wavelength having a half value of a peak value of a light emission spectrum due to electroluminescence of the quantum dots at a shorter wavelength side than a peak wavelength of the light emission spectrum due to the electroluminescence of the quantum dots, and is shorter than a wavelength having the half value of the peak value of the light emission spectrum due to the electroluminescence of the quantum dots at a longer wavelength side than the peak wavelength of the light emission spectrum due to the electroluminescence of the quantum dots.