A fluorinated polymer suitable for deposition and capable of favorable metal patterning, is provided. A resin film containing such a fluorinated polymer as a material is provided. Further, a photoelectronic element having such a resin film in its structure is provided.

A fluorinated polymer which satisfies the following requirements (1) to (3): (1) the melting point is less than 200° C., or no melting point is observed, (2) the thermogravimetric loss rate when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, substantially reaches 100% at 400° C. or lower, (3) when the temperature is increased at a temperature-increasing rate of 2° C./min under a pressure of 1×10.sup.−3 Pa, the temperature width from a temperature at which the thermogravimetric loss rate is 10% to a temperature at which it is 90%, is within 200° C.

A display device includes: a substrate; a flattened layer; at least one first light-emitting element; at least one second light-emitting element; at least one first drive circuit; and at least one second drive circuit, wherein light emitted by the first light-emitting element is taken out through the substrate, light emitted by the second light-emitting element is taken out from a direction opposite to a direction in which the light emitted by the first light-emitting element is taken out, the first light-emitting element is provided in an opening provided in the flattened laver, the second light-emitting element is provided in a layer above the flattened layer and overlaps the flattened layer, and the first drive circuit and the second drive circuit are provided closer to the substrate than the second light-emitting element.

A photoelectronic device includes an active layer containing inorganic particles, and an oxide semiconductor layer containing zinc (Zn), silicon (Si), and oxygen (O), where the oxide semiconductor layer and the active layer are stacked layers. The photoelectronic device further includes a multilayer transparent electrode over or under the active layer, wherein the oxide semiconductor layer serves as a part of the multilayer transparent electrode.

A display device has a display area in which there is provided a plurality of pixels and a frame area surrounding the display area. The display device includes, in the display area: a substrate; a thin film transistor layer; a light-emitting element layer including a plurality of light-emitting elements configured to emit light of mutually different colors; and a sealing layer in this order. The plurality of light-emitting elements include a cathode, an electron transport layer, a light-emitting layer, a hole transport layer, and an anode in this order from a substrate side. The electron transport layer includes oxide nanoparticles and a binder resin. On an electron transport layer side of the cathode, there is provided an undercoat layer in contact with the electron transport layer.

An object of the present invention is to provide a laminate in which the coloring of reflected light is reduced. The laminate includes an optical film having a light absorption anisotropic film formed using a composition including a dichroic substance and having a transmittance of more than 50%, a λ/4 plate, and a metal electrode in this order, in which in a case where a degree (%) of polarization at a wavelength of λ of the optical film is defined as P(λ) and a reflectance (%) at the wavelength of λ of the metal electrode is defined as R(λ), a ratio of a minimum value of R/P to a maximum value of R/P at wavelengths of 450 nm, 550 nm, and 650 nm is more than 85%.

A method for manufacturing a light-emitting device includes performing application, performing temperature raising, and performing first light irradiation. In the performing application, a solution including quantum dots, a ligand, an inorganic precursor, and a solvent is applied on a position overlapping with the substrate. The quantum dots each includes a core and a first shell coating the core. In the performing temperature raising, a temperature is raised until the ligand melts and the solvent vaporizes after the performing application. In the performing first light irradiation, light irradiation is performed after the performing temperature raising. In the performing first light irradiation, the inorganic precursor is epitaxially grown around the first shell to form a second shell coating the first shell, and an inorganic film in which the inorganic precursor is epitaxially grown at an interface between the quantum dot layer and the first charge transport layer is formed.

A method for manufacturing a light-emitting device includes forming the quantum dot layer, wherein the forming the quantum dot layer includes performing first application of applying, on a position overlapping with the substrate, a first solution including quantum dots, a ligand, a first inorganic precursor, and a first solvent, the quantum dots each including a core and a first shell coating the core, the ligand coordinating with each of the quantum dots, performing temperature raising of raising a temperature until the ligand melts and the first solvent vaporizes after the performing first application, performing first temperature lowering of lowering a temperature to a melting point of the ligand or lower after the performing temperature raising, and performing first light irradiation of epitaxially growing the first inorganic precursor around the first shell by first light irradiation after the performing first temperature lowering to form a second shell coating the first shell.

In a display device (2) including a light-emitting element layer (5) formed on a thin film transistor layer, the light-emitting element layer includes pixel electrodes (22), a cover film (23), a light-emitting layer (24e), and a common electrode (25). The pixel electrodes each include a flat first portion (P1) overlapping with the light-emitting layer and a second portion (P2) surrounding the first portion. The first portion protrudes toward the light-emitting layer compared to the second portion. The cover film (23) covers the second portion (P2) and causes the first portion (P1) to expose. An upper face (22f) of the first portion and an upper face (23f) of the cover film form a flush planar face (FS).

The present invention provides a photosensitive composition which can suppress the generation of a development residue on the surface of an electrode and the corrosion of the electrode to form a black pixel division layer, and also can suppress the generation of off-pixel in an organic EL display device comprising the pixel division layer. Disclosed is a photosensitive composition comprising (a) a pigment, (b) a resin having two or more tertiary amino groups in the molecule, and (c) a photosensitive agent, wherein the component (b) contains a resin having a structure represented by the general formula (1).

A display device, includes: a substrate; a thin film transistor layer including a plurality of thin film transistors; a light-emitting element layer including a plurality of light-emitting elements; a display region displaying an image; and an electronic componen being disposed on a back face side of the display region with respect to the substrate, wherein the display region includes a first display region and a second display region, each of the plurality of light-emitting elements includes a first light-emitting element and a second light-emitting element, each of the first light-emitting element and the second light-emitting element, the first electrode of the first light-emitting element includes a first reflective conductive layer, and a first upper transparent conductive layer, the first electrode of the second light-emitting element includes a second transparent conductive layer, and the second transparent conductive layer is crystallized and is thicker than the first upper transparent conductive layer.