An extreme ultraviolet light generation apparatus may include: a chamber in which extreme ultraviolet light is generated when a target is irradiated with a laser beam inside the chamber; a target supply part configured to supply the target into the chamber; and a target collector configured to collect the target which is supplied by the target supply part but is not irradiated with the laser beam in a collection container, by receiving the target on a receiving surface having a contact angle of equal to or smaller than 90 degrees with the target.

A laser apparatus may include a beam splitter configured to split a pulse laser beam into a first beam path and a second beam path, an optical sensor provided in the first beam path, an amplifier including an amplification region provided in the second beam path and being configured to amplify and emit the pulse laser beam incident thereon along the second beam path, a wavefront controller provided in the second beam path between the beam splitter and the amplifier, and a processor configured to receive an output signal from the optical sensor and transmit a control signal to the wavefront controller.

A source collector apparatus for use in a lithographic apparatus includes a fuel droplet generator configured in use to generate a stream of fuel droplets directed from an outlet of the fuel droplet generator towards a plasma formation location. In order to prevent droplet satellites from interfering with plasma formation, a gas supply is provided that in use provides a flow of gas (e.g., hydrogen) that deflects any droplet satellites out of the fuel droplet stream. Additionally, a detection apparatus may be provided as part of a shroud to determine the point at which coalescence of fuel droplets occurs thereby providing an indication of the likelihood of satellite droplets being present in the fuel droplet stream.

Provided is an extreme ultra-violet (EUV) beam generation apparatus using multi-gas cell modules in which a gas is prevented from directly flowing into a vacuum chamber by adding an auxiliary gas cell serving as a buffer chamber to a main gas cell, a diffusion rate of the gas is decreased, a high vacuum state is maintained, and a higher power EUV beam is continuously generated.

An extreme ultraviolet (EUV) photolithography system cleans debris from an EUV reticle. The system includes a cleaning electrode configured to be positioned adjacent the EUV reticle. The system includes a voltage source that helps draw debris from the EUV reticle toward the cleaning electrode by applying a voltage of alternating polarity to the cleaning electrode.

An extreme ultraviolet light system includes a steering system that steers and focuses an amplified light beam traveling along a propagation direction to a focal plane near a target location within an extreme ultraviolet light chamber, a detection system including at least one detector positioned to detect an image of a laser beam reflected from at least a portion of a target material within the chamber, a wavefront modification system in the path of the reflected laser beam and between the target location and the detection system, and a controller. The wavefront modification system is configured to modify the wavefront of the reflected laser beam as a function of a target focal plane position along the propagation direction. The controller includes logic for adjusting a location of the focal plane of the amplified light beam relative to the target material based on the detected image of the reflected laser beam.

A method and apparatus for control of a dose of extreme ultraviolet (EUV) radiation generated by a laser produced plasma (LPP) EUV light source. Each laser pulse is modulated to be of a width that is determined to be sufficient to allow for extraction of a suitable uniform amount of energy in the laser source gain medium; in some embodiments the suitable uniform amount of energy to be extracted may be selected to avoid self-lasing. The EUV energy created by each pulse is measured and total EUV energy created by the fired pulses determined, and a desired energy for the next pulse is determined based upon whether the total EUV energy is greater or less than a desired average EUV energy times the number of pulses. The energy of the next pulse is modulated, either by modulating its magnitude or by modulating the amplification of the pulse by one or more amplifiers, but without decreasing the determined width of the laser pulse.

A laser-plasma-based acceleration system includes a focusing element and a laser pulse emission directing a laser beam to the focusing element to such that laser pulses transform into a focused beam and a chamber defining a nozzle having a throat and an exit orifice, emitting a critical density range gas jet from the exit orifice for laser wavelengths ranging from ultraviolet to the mid-infrared. the critical density range gas jet intersects the focused beam at an angle and in proximity to the exit orifice of the nozzle to define a point of intersection between the focused beam and the critical density range gas jet. In intersection with the critical density range gas jet, the pulsed focused beam drives a laser plasma wakefield relativistic electron beam. A corresponding method of laser-plasma-based acceleration is also described. The critical density range may include 2×10.sup.20 cm.sup.−3 to 5×10.sup.21 cm.sup.−3.

An amplified optical beam is provided to a region that receives a target including target material, an interaction between the amplified optical beam and the target converting at least some of the target material from a first form to a second form to form a light-emitting plasma; first data comprising information related to the amplified optical beam is accessed; second data comprising information related to the light-emitting plasma is accessed; and an amount of the target material converted from the first form to the second form is determined. The determination is based on at least the first data and the second data, and the second form of the target material is less dense than the first form of the target material.

A method of manufacturing a semiconductor includes generating plasma in an amplifying tube using gas as a gain medium; detecting a state of the plasma generated in the amplifying tube; determining a virtual laser gain based on the detected state of the plasma; controlling the state of the plasma such that the virtual laser gain is within a target range; and manufacturing the semiconductor device including performing an exposure process on a substrate using a laser beam output from the amplifying tube adjusted to have the virtual laser gain within the target range.