Disclosed are semiconductor manufacturing apparatuses and operating methods thereof. The semiconductor manufacturing apparatus includes an oscillation unit that includes a first seed laser, a second seed laser, and a seed module, wherein the first seed laser oscillates a first pulse, and wherein the second seed laser oscillates a second pulse, and an extreme ultraviolet generation unit configured to use the first and second pulses to generate extreme ultraviolet light. The seed module includes a plurality of mirrors configured to allow the first and second pulses to travel along first and second paths, respectively, and a pulse control optical system including a first optical element, a second optical element, and a third optical element. The pulse control optical system is on the second path that does not overlap the first path. The third optical element includes a lens between the first optical element and the second optical element.

A broadband light source includes a rotatable drum coated with plasma-forming target material, a rotational actuator configured to rotate the rotatable drum, and a rotary encoder connected to the rotatable drum. The broadband light source may include a linear actuator configured to axially translate the rotatable drum and linear encoder connected to the rotatable drum. The broadband light source includes a pulsed laser source configured to direct pulsed illumination to a set of spots on the material-coated portion of the rotatable drum for exciting the plasma-forming target material and emitting broadband light as the drum is actuated. The broadband light source includes a control system. The control system is configured to receive one or more rotational position indicators from the rotary indicator and control triggering of the laser source based on the one or more rotational position indicators from rotary encoder.

An illumination source apparatus (500), suitable for use in a metrology apparatus for the characterization of a structure on a substrate, the illumination source apparatus comprising: a high harmonic generation, HHG, medium (502); a pump radiation source (506) operable to emit a beam of pump radiation (508); and adjustable transformation optics (510) configured to adjustably transform the transverse spatial profile of the beam of pump radiation to produce a transformed beam (518) such that relative to the centre axis of the transformed beam, a central region of the transformed beam has substantially zero intensity and an outer region which is radially outwards from the centre axis of the transformed beam has a non-zero intensity, wherein the transformed beam is arranged to excite the HHG medium so as to generate high harmonic radiation (540), wherein the location of said outer region is dependent on an adjustment setting of the adjustable transformation optics.

A laser system includes A. a laser apparatus configured to output pulsed laser light; B. a rare gas chamber; C. a light focusing optical system configured to focus the pulsed laser light in the rare gas chamber to excite the rare gas; D. a filter chamber configured to selectively transmit EUV light contained in harmonic light produced in the rare gas chamber; E. an exhauster connected to the filter chamber; F. at least one through hole disposed in the optical path between the rare gas chamber and the filter chamber; G. a rare gas supplier; H. a flow rate control valve configured to control the flow rate of the rare gas flowing from the rare gas supplier into the rare gas chamber; I. a first pressure sensor configured to detect the pressure of the rare gas in the rare gas chamber; J. a first controller configured to control the flow rate control valve in such a way that the pressure detected with the first pressure sensor falls within a reference range; and K. a second controller configured to control the pulse energy of the pulsed laser light outputted from the laser apparatus based at least on the pressure detected with the first pressure sensor.

An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.

The present disclosure is directed to a device having a nozzle for dispensing a liquid target material; one or more intermediary chamber(s), each intermediary chamber positioned to receive target material and formed with an exit aperture to output target material for downstream irradiation in a laser produced plasma (LPP) chamber. In some disclosed embodiments, control systems are included for controlling one or more of gas temperature, gas pressure and gas composition in one, some or all of a device's intermediary chamber(s). In one embodiment, an intermediary chamber having an adjustable length is disclosed.

An extreme ultraviolet light generation apparatus includes a chamber; a housing extending from an internal space of the chamber to outside of the chamber, surrounding a plasma generation region except on a trajectory of a droplet target and on an optical path of laser light, and including a first opening through which extreme ultraviolet light generated from the plasma passes; a light concentrating mirror arranged in a first space outside the housing at the internal space and reflecting the extreme ultraviolet light having passed through the first opening in a direction different from an incident direction of the extreme ultraviolet light; and a gas supply port provided in the chamber; and a gas exhaust port provided at the housing outside the chamber. An optical axis of the laser light when being radiated to the droplet target is along a direction in which the gas flows in the plasma generation region.

An extreme ultraviolet light generation system includes: a chamber; a target generation unit; a laser system configured to output a first pre-pulse laser beam, a second pre-pulse laser beam, and a main pulse laser beam so that fluence of the first pre-pulse laser beam is 1.5 J/cm.sup.2 to 16 J/cm.sup.2 inclusive at a position where a target is irradiated with the first pre-pulse laser beam; and a control unit configured to control the laser system so that a first delay time from a timing of irradiation of the target with the first pre-pulse laser beam to a timing of irradiation with the second pre-pulse laser beam and a second delay time from the timing of irradiation of the target with the second pre-pulse laser beam to a timing of irradiation with the main pulse laser beam have a following relation:
the first delay time<the second delay time.

An amplified optical beam is provided to a region that receives a target including target material, an interaction between the amplified optical beam and the target converting at least some of the target material from a first form to a second form to form a light-emitting plasma; first data comprising information related to the amplified optical beam is accessed; second data comprising information related to the light-emitting plasma is accessed; and an amount of the target material converted from the first form to the second form is determined. The determination is based on at least the first data and the second data, and the second form of the target material is less dense than the first form of the target material.

An apparatus for generating extreme ultraviolet (EUV) light includes a raw material supply unit supplying a plasma source for generating EUV light. An EUV light source unit uses a laser to generate plasma from the plasma source. A filter is configured to extract EUV light from the light. A first protective layer is disposed on a front surface of the filter. A frame having a first region exposing at least a portion of the filter or the first protective layer is disposed on the first protective layer. A width of the first region is smaller than a width of the first protective layer and smaller than or equal to a width of the filter.