The present disclosure relates to a power supply system for improving plasma uniformity and a method thereof, wherein the power supply system includes a signal generating device, a first electrode and a second electrode. The signal generator is respectively connected with a plurality of signal processing circuits and is used for generating a plurality of initial signals at different frequencies; the signal processing circuits are used for processing the initial signals at corresponding frequencies; the plurality of signal processing circuits are all connected with the first electrode; and the initial signals are processed by the signal processing circuits and then act on the plasma through the first electrode. The present disclosure may effectively process signals in different power supplies, improve the stability of plasma discharge, reduce the impact of the coupling effect between different power supplies, and realize the independent control of ion flux and ion energy.

The embodiments disclosed herein are directed to systems and devices which utilize multiple microwave plasmas can be used to increase the efficiency of traditional single microwave plasma systems. Disclosed herein is a microwave plasma apparatus for processing materials which includes a reaction chamber, a plurality of microwave plasma applicators in communication with the reaction chamber, one or more microwave radiation sources, at least one waveguide for guiding microwave radiation from the one or more microwave radiations sources to multiple plasma applicators, and a material feeding system in communication with the reaction chamber.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

The present disclosure relates to a power supply system for improving plasma uniformity and a method thereof, wherein the power supply system includes a signal generating device, a first electrode and a second electrode. The signal generator is respectively connected with a plurality of signal processing circuits and is used for generating a plurality of initial signals at different frequencies; the signal processing circuits are used for processing the initial signals at corresponding frequencies; the plurality of signal processing circuits are all connected with the first electrode; and the initial signals are processed by the signal processing circuits and then act on the plasma through the first electrode. The present disclosure may effectively process signals in different power supplies, improve the stability of plasma discharge, reduce the impact of the coupling effect between different power supplies, and realize the independent control of ion flux and ion energy.

In certain examples, methods and semiconductor structures are directed to a switching (power) amplification circuit, including resonance circuitry to resonate at a frequency associated with at least one of a plurality of different selectable resonance frequencies. The switching amplification circuit is configured to deliver power to one or multiple loads while the switching amplifier circuit is operating based on one or more of the selectable resonance frequencies.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode, a second electrode arranged so as to define a predetermined gap between a planar bottom surface of the first electrode and a planar top surface of the second electrode; at least one supplemental electrode, a first dielectric layer, a second dielectric layer, at least one supplemental top dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, at least one supplemental bottom dielectric layer having a relative permittivity between 2 and 500, and a thickness of 3 mm or less, and a power supply configured to supply electrical power to the first, second, and supplemental electrodes at a predetermined voltage and frequency, such that, based on the predetermined gaps between the first, second, and supplemental electrodes, atmospheric pressure, low temperature plasma is generated.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a first electrode; a second electrode opposing the first electrode so as to define a predetermined gap therebetween; at least one supplemental electrode opposing a planar top surface of the second electrode and a planar bottom surface of the first electrode; a first dielectric layer; at least one supplemental dielectric layer that is disposed on a additional planar bottom surface of the at least one supplemental electrode having a relative permittivity between 2 and 500, and a thickness of 3 mm or less; and a power supply configured to supply electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first and second electrodes, atmospheric pressure, low-temperature plasma is generated.

A method of generating electromagnetic fields comprises the step of using the interaction between a laser source and an appropriate target, as the source for generating high-intensity electromagnetic fields. A strong positive charge is generated in the target hit by the laser. The target has a structure consisting of at least two different elements. The method can be used to obtain the acceleration, deceleration, deflection, focusing or selection of moving charges. Such charges have been previously accelerated by a completely separate process, and therefore the two processes of pre-acceleration and subsequent processing of the beam of particles are completely separate and therefore separately tunable and optimizable Such electromagnetic fields can be used in other fields than those previously indicated, such as—merely by way of example—medicine, biology, studies on materials, electromagnetic compatibility, and generation of terahertz radiation.

A matchless plasma source is described. The matchless plasma source includes a controller that is coupled to a direct current (DC) voltage source of an agile DC rail to control a shape of an amplified square waveform that is generated at an output of a half-bridge transistor circuit. The matchless plasma source further includes the half-bridge transistor circuit used to generate the amplified square waveform to power an electrode, such as an antenna, of a plasma chamber. The matchless plasma source also includes a reactive circuit between the half-bridge transistor circuit and the electrode. The reactive circuit has a high-quality factor to negate a reactance of the electrode. There is no radio frequency (RF) match and an RF cable that couples the matchless plasma source to the electrode.