Patent classifications
H05H2242/26
Plasma generation device, substrate processing apparatus, and method of manufacturing semiconductor device
There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of the high-frequency power sources includes: a high-frequency oscillator; a directional coupler at a subsequent stage of the high-frequency oscillator, which extracts a part of a traveling wave component from the high-frequency oscillator and a part of a reflected wave component from the matcher; a filter removing a noise signal in the reflected wave component extracted by the directional coupler; and a power monitor measuring the reflected wave component after passing through the filter and the traveling wave component extracted by the directional coupler and feedback-controlling the matcher to reduce a ratio between the reflected wave component and the traveling wave component.
Method and system for treating emissions using a transient pulsed plasma
A method and system to treat emissions (e.g., smoke, particulate, odor, grease) employs a nanosecond high voltage pulse generator, a transient pulsed plasma reactor, and a DC voltage source that supplies a DC bias voltage, preferably a negative DC bias voltage to a conductor of the transient pulsed plasma reactor. The system is used in a scheme that substantially reduces at least particulate matter in emissions streams, for example emissions streams produced during cooking, for instance in commercial charbroiling processes (e.g., cooking of hamburger meat), or from operation of internal combustion engines. Both a reduction in the size distribution and total particulate mass is achieved using the method and system described herein.
Plasma processing apparatus
In a plasma processing apparatus of an exemplary embodiment, a radio frequency power source generates radio frequency power for plasma generation. A bias power source periodically applies a pulsed negative direct-current voltage to a lower electrode to draw ions into a substrate support. The radio frequency power source supplies the radio frequency power as one or more pulses in a period in which the pulsed negative direct-current voltage is not applied to the lower electrode. The radio frequency power source stops supply of the radio frequency power in a period in which the pulsed negative direct-current voltage is applied to the lower electrode. Each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears.
High voltage switching circuit
A switching circuit includes: an electronic switch comprising one or more diodes for switching a capacitor within an electronic variable capacitor array; a first power switch receiving a common input signal and a first voltage input; and a second power switch receiving the common input signal and a second voltage input, wherein the second voltage input is opposite in polarity to the first voltage input, and the first power switch and the second power switch asynchronously connect the first voltage input and the second voltage input, respectively, to a common output in response to the common input signal, the one or more diodes being switched according to the first voltage input or the second voltage input connected to the common output.
HIGH-FREQUENCY POWER SOURCE
[OBJECT] To provide a radio-frequency power source capable of outputting radio-frequency power having a desired waveform changing at high speed.
[SOLUTION] A radio-frequency power source 1 includes two DC-RF converting circuits 4A, 4B and an RF combining circuit 5 for combining the outputs from both DC-RF converting circuits 4A, 4B. The DC-RF converting circuits 4A, 4B amplify radio-frequency voltages v.sub.a, v.sub.b inputted from a radio-frequency signal generating circuit 8, and output radio-frequency voltages v.sub.PA, v.sub.PB. The RF combining circuit 5 outputs radio-frequency voltage v.sub.PX at a ratio corresponding to the phase difference θ between the radio-frequency voltages v.sub.PA and v.sub.PB. A controlling circuit 9 switches the phase difference θ between θ1 and θ2. As a result, the power P.sub.X outputted from the RF combining circuit 5 becomes pulsed radio-frequency power having a high level period and a low level period. Since the switching of the phase difference θ can be performed at high speed, it is possible to output pulsed radio-frequency power with a high switching frequency between the first level and the second level.
IMPEDANCE MATCHING METHOD AND DEVICE FOR PULSED RADIO FREQUENCY POWER SUPPLY
An impedance matching method and device for a pulsed RF power supply are provided. The impedance matching method includes: a coarse adjustment step: performing adjustment based on a current load impedance to make a current reflection coefficient |Γ| no greater than an ignition reflection coefficient |Γt|, and setting a current position as an ignition position; a fine adjusting step: keeping the ignition position unchanged, performing real-time adjustment based on the current load impedance to realize impedance matching, and setting a current position as a matching position; and a switching step: after impedance matching is realized for the first time, switching between the ignition position and the matching position in different pulse time durations of each subsequent pulse period to realize impedance matching in different pulse periods. The impedance matching method and device may improve matching efficiency, process stability and utilization of the pulsed RF power supply.
DYNAMIC CONTROL BAND FOR RF PLASMA CURRENT RATIO CONTROL
Methods and apparatus for plasma processing are provided herein. The method for controlling current ratio in a substrate processing chamber may include (a) providing a first RF signal to a first RF coil and a second RF coil at a first current ratio set point and a first current operating mode, (b) determining a first dynamic control limit for the first current ratio set point based on a value of the first current ratio set point and the first current operating mode, (c) measuring an amount of current supplied to each of the first and second coils, (d) determining the actual current ratio based on the measured amounts of current supplied to each of the first and second coils, (e) determining whether the actual current ratio determined is within the dynamic control limits, and (f) repeating steps (b)-(e) until the actual current ratio determined is within the dynamic control limits.
Computation of statistics for statistical data decimation
Systems and methods for statistical data decimation are described. The method includes receiving a variable from a radio frequency (RF) system, propagating the variable through a model of the RF system, and counting an output of the model for the variable to generate a count. The method further includes determining whether the count meets a count threshold, generating a statistical value of the variable at the output of the model upon determining that the count meets the count threshold, and sending the statistical value to the RF system to adjust the variable.
Plasma generation device including matching device, and impedance matching method
The present disclosure relates to a plasma generator having a matching apparatus for matching impedances, and an impedance matching method. The plasma generator includes an RF power supply unit, a load device part including a standard load having a predetermined impedance and an antenna-plasma device configured to generate plasma, and a matching unit configured to connect the RF power supply unit to any one of the antenna-plasma device or the standard load, and match impedances of the RF power supply unit and the antenna-plasma device when the RF power supply unit is connected to the antenna-plasma device, wherein the matching unit is configured to detect a parasitic impedance according to parasitic components inside a circuit by connecting the standard load and the RF power supply unit, connect the antenna-plasma device, when the parasitic impedances are detected, calculate reactance required for the impedance matching, and change capacitance.
Switching amplifier
A RF amplifier is provided that includes a plurality of switch modules connected in a cascade configuration and divided into disjoint sets in accordance with their corresponding distinct peak DC voltages or currents, each switch module including a plurality of switch devices connected in a half-bridge or full-bridge circuit and a DC voltage or current source electrically connected with the half-bridge or full-bridge circuit, and a control circuit configured to determine an output voltage or current of the RF amplifier at the next switching interval, examine the states of the switching devices in the respective switch modules to identify a combination of least-recently-switched switching devices within each set of switch modules that, when switched to an opposite state, will produce the determined output voltage or current, and switch to an opposite state, at the next switching interval, the switching devices in the identified combination.