A matching network for a system having a non-linear load and powered by a first RF power supply operating at a first frequency and a second RF power supply operating at a second frequency. The matching network includes a first matching network section for providing an impedance match between the first power supply and the load. The matching network also includes a second matching network section for providing an impedance match between the second power supply and the load. A the first matching network section includes a first variable reactance, and the variable reactance is controlled in accordance with IMD sensed in the signal applied to the load by the first RF power supply. The variable reactance is adjusted in accordance with the IMD to reduce the detected IMD.

A plasma reactor for a Dielectric Barrier Discharge (DBD) system, the system includes one or more plasma reactor modules, the one or more plasma modules are configured as transmission lines. A duration of a rise-time and/or a fall-time of a voltage pulse, fed into a first end of the one or more reactor modules is shorter than a run-time of the voltage pulse from a first end of the one or more reactor modules to a second end of the one or more reactor modules.

A pulse modulation system of a radio frequency (RF) power supply includes a modulation output circuit and a frequency adjustment circuit. The modulation output circuit is configured to modulate an output signal of the RF power supply and output a pulse modulation RF signal. Each pulse cycle of the pulse modulation RF signal includes a pulse-on phase and a pulse-off phase. An overshoot sub-phase is set in an initial preset time of the pulse-on phase. The frequency adjustment circuit is electrically connected to the modulation output circuit. The frequency adjustment circuit is configured to adjust an RF frequency of the pulse modulation RF signal of the overshoot sub-phase to cause a reflected power of the overshoot sub-phase to satisfy a preset reflected power or a reflected coefficient to satisfy a preset reflected coefficient.

In certain examples, methods and semiconductor structures are directed to a switching (power) amplification circuit, including resonance circuitry to resonate at a frequency associated with at least one of a plurality of different selectable resonance frequencies. The switching amplification circuit is configured to deliver power to one or multiple loads while the switching amplifier circuit is operating based on one or more of the selectable resonance frequencies.

Power circuitry for non-thermal plasma generation; optionally therapeutic plasma. Non-thermal plasma is generated distally by a catheter-like device which is flexible, narrow (e.g., diameter <5 mm), and longitudinally extended to reach, e.g., 50-100 cm into body cavities. A plasma probe power transmission cable is a part of the power generating circuit, its intrinsic impedance contributing to and constraining the time constant of an entraining RC circuit whose resonant frequency entrains the frequency of power generation by feedback. Variable length, construction and/or manufacture (for example) of the plasma probe potentially lead to different time constants. In some embodiments, transformer coupling is divided into a plurality of stages, allowing the final-stage transformer inductance to be selected with sufficient headroom to allow the use of compensation componentry to mask probe variability and maintain a targeted operating frequency. Various configurations for selecting and/or providing compensation componentry are disclosed.

Methods and apparatus for processing a substrate in a multi-frequency plasma processing chamber are disclosed. The base RF signal pulses between a high power level and a low power level. Each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined power level and a second predefined power level as the base RF signal pulses. Alternatively or additionally, each of the non-base RF generators, responsive to a control signal, proactively switches between a first predefined RF frequency and a second predefined RF frequency as the base RF signal pulses. Techniques are disclosed for ascertaining in advance of production time the first and second predefined power levels and/or the first and second predefined RF frequencies for the non-base RF signals.

Methods and apparatuses to activate, modify, and sanitize the surfaces of granular, powdered, or seed material placed in a continuous flow of a low-temperature, reduced-pressure gas plasma. Said plasma may be created with radio-frequency power, using capacitive-inductive, or a combination of both types of discharge. The plasma is generated at pressures in the 0.01 to 10 Torr range. RF frequency ranges from 0.2 to 220 MHz, and correspond to a plasma density between about n.sub.e×10.sup.8-n.sub.e×10.sup.12 or 0.001 to 0.4 W/cm.sup.3. Inserts and electrodes may be temperature controlled to control process conditions. RF discharge may be pulsed or modulated by different frequency in order to stimulate energy exchange between gas plasma and process material. The apparatuses may be grounded, biased and mechanically activated (e.g., vibration, rotation, etc.).

Disclosed is a plasma device including at least two plasma cells, and a command unit, wherein the first and the second electrodes of a given plasma cell are independent from the corresponding first and second electrodes of the contiguous plasma cells. The electrodes of contiguous plasma cells are independently connected to the command unit. The command unit includes a high voltage generator and a radiofrequency generator which are mutually protected by a filtering element.

A ballast transformer and system using the ballast transformer to couple power to a plasma load. The ballast transformer has a magnetic core, a first primary winding on a primary side of the magnetic core, a secondary winding on a secondary side of the magnetic core, and a second primary winding connected in series with the first primary winding and wound in proximity to the secondary winding on the secondary side of the magnetic core. The first primary winding is connectable to the AC power source, and the secondary winding is connectable to the plasma load via a coaxial cable.

A matching network for a system having a non-linear load and powered by a first RF power supply operating at a first frequency and a second RF power supply operating at a second frequency. The matching network includes a first matching network section for providing an impedance match between the first power supply and the load. The matching network also includes a second matching network section for providing an impedance match between the second power supply and the load. The first matching network section includes a first variable reactance, and the variable reactance is controlled in accordance with IMD sensed in the signal applied to the load by the first RF power supply. The variable reactance is adjusted in accordance with the IMD to reduce the detected IMD.