An object of the present invention is to provide a non-equilibrium plasma (NEP) system and method of refining syngas. In accordance with an aspect of the present invention, there is provided a non-equilibrium plasma system for refining syngas, the system comprising a reactor with a hollow chamber, having one or more inlet manifolds configured to promote an axially symmetric and swirling flow pattern, into which syngas and one or more gasifying agents are introduced for processing within the reactor, a high voltage electrode; and a ground electrode, wherein the system is configured to create a non-equilibrium plasma producing electric arc upon application of a high voltage potential across an arc initiating gap between the high voltage electrode and the ground electrode and wherein the system is configured such that the syngas, the one or more gasifying agent(s) and plasma producing electric arc come together concurrently in the reactor. In one embodiment of the invention, the non-equilibrium plasma system comprises two eccentric cylindrical manifolds configured to form a single inlet manifold, wherein the two eccentric cylindrical manifolds comprise a first eccentric cylindrical manifold for gasifying agent input and a second eccentric cylindrical manifold for syngas input. The invention also comprises a method for refining syngas wherein the non-equilibrium plasma system of the present invention combines the syngas, the air and the plasma-producing electric arc in the same region, which will co-exist in the same location.

Systems, methods, and apparatus are contemplated in which a tube cell that produces a dielectric barrier discharge (DBD) is individually configured to minimize the mixing of unwanted byproducts of the generated plasma with an exhaust air stream. The tube cell generates a DBD within a tube cell, such that oxidants or radicals are generated in an environment substantially separated from the exhaust stream. The generated oxidants are directed to intersect with the exhaust stream to minimize the generation of unwanted byproducts. The tube cells are further shaped and arranged in tube cell arrays to alter the flow dynamics of the exhaust stream and the oxidant or radical streams, including mixing of the streams.

Disclosed are systems, methods, and devices for generating radicals in an air stream at the intake of an internal combustion engine, as well as increasing the thrust of such air streams into the engine. A plasma generator including plasma actuators, dielectric barrier discharge electrodes, or both is positioned in the intake stream. Plasma actuators are disposed on the interior surface of the plasma generator, exposed to the intake stream. Dielectric barrier discharge electrodes protrude into the intake air stream. Plasma, preferably DBD plasma, glow plasma, or filamentary plasma, is generated in the air intake stream, creating radicals in the stream, mixing the radicals in the stream, and reducing drag while increasing thrust of air in the intake stream. A concentric cylinder can be further disposed in the plasma generator, with further plasma actuators, dielectric barrier discharge electrodes, or both, on the interior and exterior surfaces of the cylinder.

Systems, methods, and apparatus are contemplated in which a tube cell that produces a dielectric barrier discharge (DBD) is individually configured to minimize the mixing of unwanted byproducts of the generated plasma with an exhaust air stream. The tube cell generates a DBD within a tube cell, such that oxidants or radicals are generated in an environment substantially separated from the exhaust stream. The generated oxidants are directed to intersect with the exhaust stream to minimize the generation of unwanted byproducts. The tube cells are further shaped and arranged in tube cell arrays to alter the flow dynamics of the exhaust stream and the oxidant or radical streams, including mixing of the streams.

A method and system to treat emissions (e.g., smoke, particulate, odor, grease) employs a nanosecond high voltage pulse generator, a transient pulsed plasma reactor, and a DC voltage source that supplies a DC bias voltage, preferably a negative DC bias voltage to a conductor of the transient pulsed plasma reactor. The system is used in a scheme that substantially reduces at least particulate matter in emissions streams, for example emissions streams produced during cooking, for instance in commercial charbroiling processes (e.g., cooking of hamburger meat), or from operation of internal combustion engines. Both a reduction in the size distribution and total particulate mass is achieved using the method and system described herein.

The present disclosure relates to an electric discharge device and associated method for molecular restructuring of a fluid. The electric discharge device comprises a discharge cell including a first dielectric layer and a second dielectric layer that are spaced apart by a gap constituting a flow channel for a feed fluid to be molecularly restructured. The dielectric layers and the flow channel are arranged between a first electrode and a second electrode for generating electric discharge in the flow channel when voltage is applied between the electrodes. The discharge cell comprises a double-walled dielectric tube having an inner wall and an outer wall that come together at both ends of the tube to form a double-walled dielectric tube made in one piece, the inner and outer walls of the double-walled dielectric tube constituting the first and second dielectric layers of the discharge cell.

A gas treatment method, including: treating an exhaust gas discharged from a semiconductor process chamber using a gas treatment system; and discharging the treated exhaust gas, wherein the treating of the exhaust gas includes: operating a first thermal oxidizer to treat the exhaust gas discharged from the semiconductor process chamber, the first thermal oxidizer being connected to the semiconductor process chamber and allowing the treated exhaust gas to pass through a plasma processing apparatus connected to the first thermal oxidizer; stopping the operation of the first thermal oxidizer to perform maintenance on the first thermal oxidizer; and wherein the stopping the operation of the first thermal oxidizer comprises: performing maintenance on the first thermal oxidizer; and operating the plasma processing apparatus to treat the exhaust gas discharged from the semiconductor process chamber

The present disclosure discloses a thermal plasma treatment method for sulfur hexafluoride (SF.sub.6) degradation. In the thermal plasma treatment method for SF.sub.6 degradation, Ar is input into a thermal plasma generator as a carrier gas; annular electrodes are electrically connected to a direct current power supply to generate an arc plasma region in the presence of the carrier gas Ar; to-be-reacted SF.sub.6 and to-be-reacted H.sub.2 in a predetermined ratio are input into the arc plasma region to generate hydrogen radicals as well as fluorine radicals, and the hydrogen radicals and the fluorine radicals are bonded with each other to generate HF to inhibit the self-recovery reaction of SF.sub.6; and final products include HF and elemental S.

A semiconductor waste abatement system for a semiconductor processing system includes a vacuum pump, an abatement apparatus having an abatement chamber in fluid communication with a source of semiconductor waste gas from the semiconductor processing chamber, and with the abatement chamber configured to ionize the waste gas and to exhaust ionized gas. The abatement system further includes a filter apparatus with a filter chamber, which forms a liquid reservoir. The inlet of the filter apparatus is in fluid communication with the outlet of the abatement chamber and the liquid reservoir, and the outlet of the filter apparatus is in communication with the inlet of the vacuum pump, wherein the filter chamber is under a vacuum, and wherein semiconductor waste gas is ionized in the abatement chamber and then filtered by the filter apparatus prior to input to the vacuum pump.

A plasma generator generates atmospheric pressure, low temperature plasma (cold plasma), and includes a thin plate-like first electrode defining a planar bottom surface. A thin plate-like second electrode defines a planar top surface. The second electrode opposes the first electrode, such that the bottom surface of the first electrode faces the top surface of the second electrode. A first dielectric layer is disposed on the bottom surface of the first electrode, and a second dielectric layer is disposed on the top surface of the second electrode. A spacer supports the first and second electrodes to define a predetermined gap between the first and second dielectric layers. A power supply supplies electrical power to the first and second electrodes at a predetermined voltage and frequency, such that, based on the predetermined gap between the first and second dielectric layers, cold plasma is generated.