The present disclosure relates to a dielectric substrate that may include a polyimide layer and a first filled polymer layer overlying the polyimide layer. The first filled polymer layer may include a resin matrix component, and a first ceramic filler component. The first ceramic filler component may include a first filler material. The first filler material may further have a mean particle size of at not greater than about 10 microns.

A method of making an electronic device may include forming at least one circuit layer that includes solder pads on a substrate and forming at least one liquid crystal polymer (LCP) solder mask having mask openings therein. The method may also include forming at least one thin film resistor on the LCP solder mask and coupling the at least one LCP solder mask to the substrate so that the at least one thin film resistor is coupled to the at least one circuit layer and so that the solder pads are aligned with the mask openings.

A method of making an electronic device may include forming at least one circuit layer that includes solder pads on a substrate and forming at least one liquid crystal polymer (LCP) solder mask having mask openings therein. The method may also include forming at least one thin film resistor on the LCP solder mask and coupling the at least one LCP solder mask to the substrate so that the at least one thin film resistor is coupled to the at least one circuit layer and so that the solder pads are aligned with the mask openings.

The present invention relates to a resin composition containing a compound having a maleimido group, a divalent group having at least two imido bonds and a saturated or unsaturated divalent hydrocarbon group.

The present invention relates to a resin composition containing a compound having a maleimido group, a divalent group having at least two imido bonds and a saturated or unsaturated divalent hydrocarbon group.

The β-eucryptite fine particle production method of the invention includes spraying, into an atmosphere at 50° C. to a temperature lower than 300° C., a solution containing a water-soluble lithium salt, a water-soluble aluminum salt, and colloidal silica, in such amounts that the mole proportions among lithium atoms, aluminum atoms, and silicon atoms (Li:Al:Si) are adjusted to 1:1:1, to thereby dry the solution, and, subsequently, firing the dried product in air at 600 to 1,300° C.

The β-eucryptite fine particle production method of the invention includes spraying, into an atmosphere at 50° C. to a temperature lower than 300° C., a solution containing a water-soluble lithium salt, a water-soluble aluminum salt, and colloidal silica, in such amounts that the mole proportions among lithium atoms, aluminum atoms, and silicon atoms (Li:Al:Si) are adjusted to 1:1:1, to thereby dry the solution, and, subsequently, firing the dried product in air at 600 to 1,300° C.

The present invention provides a high thermal conductive silicon nitride sintered body having a thermal conductivity of 50 W/m.Math.K or more and a three-point bending strength of 600 MPa or more, wherein when an arbitrary cross section of the silicon nitride sintered body is subjected to XRD analysis and highest peak intensities detected at diffraction angles of 29.3±0.2°, 29.7±0.2°, 27.0±0.2°, and 36.1±0.2° are expressed as I.sub.29.3°, I.sub.29.7°, I.sub.27.0°, and I.sub.36.1°, a peak ratio (I.sub.29.3°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.01 to 0.08, and a peak ratio (I.sub.29.7°)/(I.sub.27.0°+I.sub.36.1°) satisfies a range of 0.02 to 0.16. Due to above configuration, there can be provided a silicon nitride sintered body having a high thermal conductivity of 50 W/m.Math.K or more, and excellence in insulating properties and strength.

The present application relates to a conductive structure body and a manufacturing method thereof. The method for manufacturing the conductive structure body according to an exemplary embodiment of the present application includes forming a metal layer on a substrate and forming a darkening layer on the metal layer, in which the forming of the darkening layer is performed by reactive sputtering using CO.sub.2.

Provided is a transparent conductive film-equipped substrate that makes it difficult for an insulating film provided on a portion from which a transparent conductive film has been removed to peel off. The transparent conductive film-equipped substrate 10 includes a substrate 1 and a transparent conductive film 2 provided on the substrate 1 and subjected to patterning, wherein the transparent conductive film-equipped substrate is made up so that: a removal region A1 where the transparent conductive film 2 has been removed by patterning, a non-removal region A2 where the transparent conductive film is left unremoved, and a boundary region A3 provided between the removal region A1 and the non-removal region A2 are formed on the substrate 1; and the boundary region A3 is formed with insular portions 2b in which the transparent conductive film 2 is formed in insular shapes.