A ceramic substrate of the present disclosure is a ceramic substrate including a ceramic body having a ceramic layer on a surface thereof and a surface electrode placed on a primary face of the ceramic body. Between the surface electrode and the ceramic layer is an oxide layer made of an insulating oxide having a melting point higher than the firing temperature for the ceramic layer. The oxide layer also extends on the ceramic layer not occupied by the surface electrode. The oxide layer on the ceramic layer not occupied by the surface electrode has a rough surface.

A printed wiring board includes a laminate, a wiring layer formed on first main surface of the laminate and including conductor pads, via conductors including first and second via conductors and formed in the laminate such that each via conductor has diameter gradually reducing from the first main surface toward second main surface of the laminate, and conductor post formed on the first via conductors such that each conductor post includes a metal foil and a plating layer formed on the metal foil. The via conductors are formed such that the first via conductors are positioned in an outer edge portion of the laminate and have minimum-diameter-side surfaces positioned to form a same plane with the second main surface of the laminate and that the second via conductors are positioned in a central portion of the laminate and have minimum-diameter-side surfaces recessed from the second main surface of the laminate.

A wiring substrate includes an insulating substrate, a conductor layer and an interlayer. The insulating substrate contains AlN. The conductor layer contains Cu. The interlayer is located between the insulating substrate and the conductor layer. In the interlayer, between a first region near the insulating substrate and a second region near the conductor layer, Cu concentration is higher in the second region than in the first region, and Al concentration is higher in the first region than in the second region.

To provide a copper-clad laminate which maintains adhesion between a resin film and a conductor layer and which suppresses the occurrence of wrinkles. A copper-clad laminate has a base film containing a thermoplastic resin, an underlying metal layer film-formed on a surface of the base film by a dry plating method, and a copper layer film-formed on a surface of the underlying metal layer. The underlying metal layer has a mean thickness of 0.3 to 1.9 nm. Since the underlying metal layer has a mean thickness of 0.3 nm or more, it is possible to maintain adhesion between the base film and a conductor layer. Since the underlying metal layer has a mean thickness of 1.9 nm or less, it is possible to suppress an increase in the temperature of a film during film-forming of the underlying metal layer, and it is possible to suppress the occurrence of wrinkles.

A metallization, for carrying current in an electrical component, includes a bottom layer overlying a substrate surface and includes titanium (Ti) or a titanium compound as main constituent. An upper layer overlies the bottom layer and includes copper (Cu) as main constituent. The bottom layer and the upper layer form a base layer. A top layer is in direct contact with the upper layer and includes aluminum (Al) as main constituent. The base layer further includes a middle layer, consisting of silver, that is arranged between the bottom layer and the upper layer.

The disclosure discloses a flexible copper clad laminate (FCCL) having a high peel strength and a manufacturing method thereof. The FCCL includes: an organic polymer film layer (1), an adjusting layer (2), a transition layer (3) and a copper layer (4).

A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of a silicon nitride, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is provided on a ceramic member side of a bonded interface between the copper member and the ceramic member, a Mg solid solution layer is provided between the magnesium oxide layer and the copper member and contains Mg in a state of a solid solution in a Cu primary phase, and a magnesium nitride phase is present on a magnesium oxide layer side of the Mg solid solution layer.

This A copper/ceramic bonded body includes: a copper member made of copper or a copper alloy; and a ceramic member made of oxygen-containing ceramics, wherein the copper member and the ceramic member are bonded to each other, a magnesium oxide layer is formed on a ceramic member side between the copper member and the ceramic member, and an active metal oxide phase composed of an oxide of one or more active metals selected from Ti, Zr, Nb, and Hf is dispersed inside a copper layer in contact with the magnesium oxide layer.

According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 μm at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 μm at the second major surface and fully fills the via between the first cavity and the second cavity.

A circuit board includes a base layer, a seed layer formed on the base layer, and a first electrode layer formed on the seed layer. The seed layer is formed of a metal oxide with a thickness of 100 to 400 Å. he circuit board may further include an insulation layer formed on the first electrode layer and a second electrode layer formed on the insulation layer.