A ceramic-copper composite having a flat plate shape, including: a ceramic layer; a copper layer; and a brazing material layer present between the ceramic layer and the copper layer. When a region having a length of 1,700 μm in a long-side direction is a region P on a cut surface of the ceramic-copper composite obtained when the ceramic-copper composite is cut with a plane perpendicular to a main surface of the ceramic-copper composite, an average crystal grain size D1 of copper crystals at least partially present in a region P1 within 50 μm on a side of the copper layer from an interface between the ceramic layer and the brazing material layer in the region P is 30 μm or more and 100 μm or less.

A bonded body is formed by bonding a ceramic member formed of an Al-based ceramic and a copper member formed of copper or a copper alloy, in which, in a bonding layer formed between the ceramic member and the copper member, a crystalline active metal compound layer formed of a compound including an active metal is formed on a ceramic member side, and, the Al concentration is 0.15 at % or less in a thickness range of 0.5 μm to 3 μm from an interface of the active metal compound layer on a copper member side toward the copper member.

A method for manufacturing a wiring board capable of improving adhesion between an underlayer and a seed layer. An electrically conductive underlayer is disposed on the surface of an insulating substrate and a seed layer containing metal is disposed on the surface of the underlayer to prepare a substrate with seed-layer. A diffusion layer in which elements forming the underlayer and seed layer are mutually diffused is formed between the underlayer and the seed layer, by irradiating the seed layer with a laser beam. A metal layer is formed on the surface of the seed layer by disposing a solid electrolyte membrane between an anode and the seed layer as a cathode and applying voltage between the anode and the underlayer. An exposed portion without the seed layer of the underlayer is removed from the insulating substrate.

An article and a method of making the article is disclosed where the article includes a sequence of metal layers arranged to inhibit adhesion failure between the metal layers. The metal layers include a topcoat of silver, an intermediate layer of silver, a silver-tin alloy layer and a nickel layer. The layers adhere to a substrate containing copper or copper alloy.

The carrier-foil-attached ultra-thin copper foil according to one embodiment of the present invention comprises a carrier foil, a release layer, a first ultra-thin copper foil, a Cu-diffusion prevention layer, an Al layer, and a second ultra-thin copper foil, wherein the release layer may comprise a first metal (A2) having peeling properties, and a second metal (B2) and third metal (C2) facilitating the plating of the first metal (A2).

A display device includes a display module including a bending area at which the display module is bent, and a non-bending area which extends from the bending area; a driving control module connected to the bending area of the display module; and a protective cover removably attachable to the display module, the protective cover including a cover portion and a support protrusion which protrudes from the cover portion. The display module bent at the bending area thereof disposes the driving control module facing a rear surface of the display module, and the protective cover attached to the display module bent at the bending area thereof disposes each of: the cover portion of the protective cover corresponding to the bending area of the display module and to the driving control module facing the rear surface of the display module, and the support protrusion corresponding to the driving control module.

A glass core, a multilayer circuit board, and a method of manufacturing a glass core that appropriately form copper wiring, and suppresses crack and the like, a glass core includes: a glass plate; a first metal layer provided on the glass plate; a first electrolytic copper plating layer provided on the first metal layer; a dielectric layer provided above the first electrolytic copper plating layer; a second metal layer provided on the dielectric layer; an electroless nickel plating layer provided on the second metal layer and having a phosphorus content of less than 5 mass %; and a second electrolytic copper plating layer provided on the electroless nickel plating layer.

A base material for a printed circuit board includes: an insulating base film; and a sintered body layer of metal particles layered on one side surface of the base film; wherein an arithmetic mean roughness (Sa) of a surface of the sintered body layer that is opposite to the base film is greater than or equal to 0.005 μm and less than or equal to 0.10 μm.

[Object]

To provide a copper clad laminate that is capable of achieving high adhesion between a low dielectric resin film and a copper plating layer and a good volume resistivity while suppressing a transmission loss when being applied to a flexible circuit board, and a method for producing the copper clad laminate.

[Solving Means]

A copper clad laminate of the present invention includes a low dielectric resin film having a relative permittivity of 3.5 or lower and a dissipation factor of 0.008 or lower at a frequency of 10 GHz, and an electroless copper plating layer laminated on at least one surface of the low dielectric resin film. A weighted average size of crystallites in the electroless copper plating layer is 25 to 300 nm, and an adhesion strength between the resin film and the electroless copper plating layer is 4.2 N/cm or more.

A bonded body according to an embodiment comprises a ceramic substrate, a copper plate, and a bonding layer provided on at least one surface of the ceramic substrate and bonding the ceramic substrate and the copper plate, in which the bonding layer contains Cu, Ti, and a first element being one or two selected from Sn and In, and the bonding layer includes a Ti-rich region in which a ratio (M.sub.Ti/M.sub.E1) of a mass M.sub.Ti of Ti to a mass M.sub.E1 of the first element being 0.5 or more and a Ti-poor region in which the ratio (M.sub.Ti/M.sub.E1) being 0.1 or less.