A method for manufacturing a circuit board structure with a waveguide is provided. The method includes: providing a first substrate unit, a second substrate unit, a third substrate unit, and two adhesive layers, the first substrate unit including a first dielectric layer and a first conductive layer, the first conductive layer including a first shielding area and two first artificial magnetic conductor areas disposed on two sides of the first shielding area; the second substrate unit including a second dielectric layer and a second conductive layer, the second conductive layer including a second shielding area; the third substrate unit defining a first slot, and the adhesive layer defining a second slot; stacking the first substrate unit, one of the adhesive layers, the third substrate unit, another one of the adhesive layers, and the second substrate unit in that order; pressing the intermediate body.

Back plates to support integrated circuit packages in sockets on printed circuit boards and associated methods are disclosed. An example back plate includes a ceramic substrate having a first surface and a second surface opposite the first surface. The example back plate further includes metal coupled to the ceramic substrate. At least a portion of the metal is disposed between planes defined by the first and second surfaces of the ceramic substrate.

A method for manufacturing a packaging substrate, and a packaging substrate are disclosed. The method includes: providing a bottom board with a first circuit layer, the first circuit layer being provided with at least one demand point, and one side of the demand point being provided with a first to-be-avoided region; machining a first intermediate insulating layer on the bottom board, the first intermediate insulating layer including a first intermediate insulating dielectric covering the first to-be-avoided region; machining a first intermediate wiring layer on the first intermediate insulating layer, the first intermediate wiring layer including a first intermediate circuit partially arranged on the first intermediate insulating dielectric and connected to the demand point; machining a first insulating layer on the first intermediate wiring layer which is stacked on the bottom board and covers the first intermediate wiring layer; and machining a circuit build-up layer on the first insulating layer.

A method of manufacturing a curved-surface metal line is provided. A three-dimensional structure is formed with a metal member and then fixed together with an insulator. Alternatively, the metal member and the insulator are embedded-formed to jointly form the three-dimensional structure, or the metal member and the insulator are fixed together and then jointly form the three-dimensional structure. Then, a photoresist protection layer is formed outside the metal member, and a selective exposure treatment is performed such that corresponding locations of the photoresist protection layer being exposed is subject to a photochemical reaction. The photoresist protection layer is developed, and after the photoresist protection layer is partially dissolved, portions of the metal member at the corresponding locations are simultaneously exposed. The exposed portions of the metal member are etched, and residual portions of the photoresist protection layer are removed to form the metal line provided on the insulator.

A semiconductor package according to an embodiment includes a first insulating layer including a through hole; an insulating member disposed in the through hole of the first insulating layer; a first electrode layer disposed on the insulating member; a second insulating layer disposed on the first electrode layer; and a first through electrode passing through the second insulating layer, wherein the first through electrode overlaps the first electrode layer and the insulating member in a vertical direction.

A structure includes a first copper layer and a first carbon layer applied directly to a surface of the first copper layer, a second copper layer and a second carbon layer applied directly to a surface of the second copper layer, and an insulating core disposed between the first and second copper layers. Each of the first carbon layer and the second carbon layer faces toward and directly contacts the insulating core. The structure provides electrical power to a component of an electronic device.

A composite wiring substrate includes a first wiring substrate including a first connection terminal, a second wiring substrate including a second connection terminal facing the first connection terminal, and a joint material joining the first connection terminal and the second connection terminal. The first outline of the first connection terminal is inside the second outline of the second connection terminal in a plan view. The joint material includes a first portion formed of an intermetallic alloy of copper and tin, and contacting each of the first connection terminal and the second connection terminal, and a second portion formed of an alloy of tin and bismuth, and including a portion between the first outline and the second outline in the plan view. The second portion contains the bismuth at a higher concentration than in the eutectic composition of a tin-bismuth alloy, and is separated from the second connection terminal.

A semiconductor device includes a die having an input port and an output port. The semiconductor device also includes a multilayer package substrate with pads on a surface of the multilayer package substrate configured to be coupled to circuit components of a printed circuit board. The multilayer package substrate also includes a passive filter comprising an input port and an output port, and a planar inductor. The planar inductor is coupled to a given pad of the pads of the multilayer package substrate with a first via of the multilayer package substrate and to the input port of the die with a second via of the multilayer package substrate. The planar inductor extends parallel to the surface of the multilayer package substrate.

The invention discloses a circuit board enhancing structure and a manufacture method thereof. The method includes the following steps: providing a substrate; forming a first circuit on the substrate; forming a first dielectric layer enclosing the first circuit on the substrate; forming a first opening on the first dielectric layer; forming a first pattern photoresist layer on the first dielectric layer to divide a surface of the first dielectric layer as a first structure enhancing area and a second circuit area, wherein the first opening is disposed in the first structure enhancing area; forming a second circuit in the second circuit area and a first enhancing structure in the first opening, wherein the first enhancing structure protrudes from the first opening; removing the first pattern photoresist layer; and forming a second dielectric layer enclosing the second circuit and the first enhancing structure on the first dielectric layer.

A circuit board structure includes a circuit substrate, a first circuit layer, and a second circuit layer. The circuit substrate has a surface and includes at least one conductive structure and at least one patterned circuit layer. The conductive structure is electrically connected to the patterned circuit layer, and an upper surface of the conductive structure is aligned with the surface. The first circuit layer is directly disposed on the surface of the circuit substrate and electrically connected to the conductive structure. A line width of the first circuit layer is less than or equal to ¼ of a line width of the patterned circuit layer. The second circuit layer is directly disposed on the first circuit layer and electrically connected to the first circuit layer.