A method of making a security mesh comprises forming on a conductive substrate an alumina film having through-holes in which metal, e.g., copper, through-wires are formed. First surface wires are formed on one surface of the alumina film and second surface wires are formed on the second, opposite surface of the alumina film in order to connect selected through-wires into a continuous undulating electrical circuit embedded within the alumina film. The security mesh product comprises an alumina film having a continuous undulating electrical circuit comprising copper or other conductive metal extending therethrough. A stacked security mesh comprises two or more of the mesh products being stacked one above the other.

A surface treated copper foil for a High-Frequency circuit as well as a corresponding method of treating a copper foil, the copper foil including two opposite sides, where a first side is coated with a treatment layer including, in this order: a first layer including oxides of Mo and of Zn deposited on the first side, where the first layer is free of Ni; a second layer of Cr oxide; and a coupling agent layer; where the first layer includes the oxides of Mo and of Zn in a quantity of between 5 and 30 mg/m.sup.2 calculated as Mo and Zn; where the treatment layer has a roughness Rz JIS of 0.7 m or less; and where the first side is free of roughening treatment.

A method of forming a metallic pattern on a substrate is provided. The method includes applying onto a metallic surface, a chemically surface-activating solution having an activating agent that chemically activates the metallic surface; non-impact printing an etch-resist ink on the activated surface to produce an etch resist mask according to a predetermined pattern, wherein at least one ink component within the etch-resist ink undergoes a chemical reaction with the activated metallic surface to immobilize droplets of the etch-resist ink when hitting the activated surface; performing an etching process to remove unmasked metallic portions that are not covered with the etch resist mask; and removing the etch-resist mask.

The present disclosure provides a hydrophobic low-dielectric-constant film and a preparation method therefor. The low-dielectric-constant film is formed from one or more fluorine-containing compounds A by means of a plasma enhanced chemical vapor deposition method, and the one or more fluorine-containing compounds comprise a compound having the general formula C.sub.xSi.sub.yO.sub.mH.sub.nF.sub.2x+2yn+2 or C.sub.xSi.sub.yO.sub.mH.sub.nF.sub.2x+2yn, x being an integer from 1 to 20, y being an integer from 0 to 8, m being an integer from 0 to 6, and n being 0, 3, 6, 7, 9, 10, 12, 13, 15, 16, 17 and 19. Thus, a nano-film having a low dielectric constant and good hydrophobicity is formed on the surface of a substrate.

A component carrier, a component carrier arrangement, and a method of manufacturing the component carrier are disclosed. The component carrier includes a stack having i) at least one electrically insulating layer structure and at least one electrically conductive layer structure on top of the electrically insulating layer structure; and ii) at least one lateral wall. The electrically insulating layer structure includes a first edge portion defining at least partially the lateral wall of the stack. The electrically conductive layer structure includes a second edge portion being offset with respect to the first edge portion towards the inner part of the stack, in particular by a distance in the range between 0.05 m and 15 m.