Flexible electrical devices comprising electrode layers on softening polymers and methods of manufacturing such devices, including lift-off processes for forming electrodes on softening polymers, processes for forming devices with a patterned double softening polymer layer, and solder reflow processes for forming electrical contacts on softening polymers.

An electrical device, comprising a softening polymer layer, an electrode layer on a surface of the softening polymer layer and a cover polymer layer on the surface of the softening polymer layer. An opening in the polymer cover layer is filled with a reflowed solder, one end of the reflowed solder, located inside the opening, contacts a contact pad site portion of the electrode layer, and another end of the reflowed solder contacts an electrical connector electrode of the device.

A method of manufacturing a printed wiring assembly PWA on a substrate, includes the following steps: receiving assembly data associated with said PWA; dispensing, onto said substrate, and in accordance with the assembly data, a conductive ink; curing the dispensed conductive ink; reducing, by plasma treatment, the cured conductive ink; depositing a solder material on top of at least a portion of the reduced conductive ink; picking and placing, in accordance with the assembly data, one or more components on the deposited solder material; and performing reflow soldering, by heating, of the deposited solder material, the one or more placed components, and the reduced conductive ink, forming an intermetallic compound therebetween.

A method of manufacturing an electrical device, comprising: forming a patterned inorganic liftoff layer to expose a target electrode site on a softening polymer layer, depositing an electrode layer on the inorganic liftoff layer and on the exposed target electrode site, and removing the inorganic liftoff layer by a horizontal liftoff etch to leave the electrode layer on the exposed target electrode site.

A deposition method includes depositing on a surface of a substrate a stack by an ALD (atomic layer deposition). Also provided is an ALD reactor for carrying out the method and products obtained using the deposition method.

A method of encapsulating an electronic assembly comprises disposing a plurality of electrically non-conductive particles on a substrate which carries one or more components of the electronic assembly; introducing a reactive parylene monomer in a vapor form into interstitial spaces among the plurality of the electrically non-conductive particles; and forming a parylene binder in the interstitial spaces of the electrically non-conductive particles from the reactive parylene monomer.

An electrical assembly which has a multi-layer conformal coating comprising three or more layers on at least one surface of the electrical assembly, wherein the lowest layer of the multi-layer conformal coating, which is in contact with the at least one surface of the electrical assembly, is obtainable by plasma deposition of a precursor mixture comprising (a) one or more organo-silicon compounds, (b) optionally O.sub.2, N.sub.2O, NO.sub.2, H.sub.2, NH.sub.3 and/or N.sub.2, and (c) optionally He, Ar and/or Kr; the uppermost layer of the multi-layer conformal coating is obtainable by plasma deposition of a precursor mixture comprising (a) one or more organosilicon compounds, (b) optionally O.sub.2, N.sub.2O, NO.sub.2, H.sub.2, NH.sub.3 and/or N.sub.2, and (c) optionally He, Ar and/or Kr; and the multi-layer coating comprises one or more layers which is obtainable by plasma deposition of a precursor mixture comprising (a) one or more hydrocarbon compounds of formula (A), (b) optionally NH.sub.3, N.sub.2O, N.sub.2, NO.sub.2, CH.sub.4, C.sub.2H.sub.6, C.sub.3H.sub.6 and/or C.sub.3H.sub.8, and (c) optionally He, Ar and/or Kr, Z.sub.1 represents C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.2 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.3 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.4 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; Z.sub.5 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl; and Z.sub.6 represents hydrogen, C.sub.1-C.sub.3 alkyl or C.sub.2-C.sub.3 alkenyl.

##STR00001##

A method for protecting a substrate from corrosion, which method comprises in sequence: a first step including plasma polymerization of a precursor monomer and deposition of the resultant polymer onto at least one surface of a substrate; a second step including exposing the polymer to an inert gas in the presence of a plasma without further deposition of polymer onto the or each surface of the substrate; a third step including plasma polymerization of the precursor monomer used in the first step and deposition of the resultant polymer onto the polymer deposited in the first step so as to increase the thickness of the polymer; and optionally, a fourth step including exposing the polymer to an inert gas in the presence of a plasma without further deposition of polymer onto the or each surface of the substrate.

Provided are a photocurable composition having high filling property and capable of reducing a mold release force upon production of a film through the utilization of a photo-imprint method, and a method of manufacturing a film using the photocurable composition. The photocurable composition is a photocurable composition, including at least the following component (A) to component (C): (A) a polymerizable compound; (B) a photopolymerization initiator; and (C) a surfactant represented by the following general formula (1):
Rf.sub.1-Rc-X.(1)

Manufacturing quality of a semiconductor device can be improved, and manufacturing throughput can be improved. A method of manufacturing a semiconductor device includes (a) placing a substrate on a substrate supporting unit installed in a processing chamber, the substrate having thereon a solder with an oxygen-containing film on a surface thereof, (b) reducing the oxygen-containing film by supplying a reducing gas into the processing chamber while maintaining a thermal conductivity of an inner atmosphere of the processing chamber at a first thermal conductivity, and (c) melting the solder by supplying a thermally conductive gas into the processing chamber while maintaining the thermal conductivity of the inner atmosphere of the processing chamber at a second thermal conductivity higher than the first thermal conductivity.