A microwave dielectric component (100) comprises a microwave dielectric substrate (101) and a metal layer, the metal layer being bonded to a surface of the microwave dielectric substrate (101). The metal layer comprises a conductive seed layer and a metal thickening layer (105). The conductive seed layer comprises an ion implantation layer (103) implanted into the surface of the microwave dielectric substrate (101) and a plasma deposition layer (104) adhered on the ion implantation layer (103). The metal thickening layer (105) is adhered on the plasma deposition layer (104). A manufacturing method of the microwave dielectric component (100) is further disclosed.

A method for modifying an LGA package after production is described herein. Generally, a modification of an LGA package by shorting two contacts together via a trace made of a robust conductive metal such as tungsten or platinum. Specifically, the present disclosure relates to a method for modifying a LGA package shorting two contacts together using FIB deposition via a gallium ion beam.

The invention is directed to a method for treating an electronic device that is encapsulated in a plastic package, said method comprising the steps of providing a gas stream comprising a hydrogen source; inducing a hydrogen-containing plasma stream from said gas; and directing the hydrogen-containing plasma stream to the plastic package to etch the plastic package.

Embodiments of the invention include a method of forming a multi-layer integrated circuit (IC) structure that includes forming a passive energy source formed from a conductive metal. A dielectric target layer is formed over the first energy source. An active energy source is used to generate electromagnetic radiation having a predetermined wavelength, wherein the dielectric target layer is substantially transparent to the electromagnetic radiation at the predetermined wavelength. The dielectric target layer is exposed to the electromagnetic radiation by transmitting the electromagnetic radiation into and through the dielectric target layer to impact the passive energy source. The passive energy source is configured to, based at least in part on being exposed to the electromagnetic radiation, absorb the electromagnetic radiation, experience a conductive material temperature increase such that the conductive material generates heat energy, and emit the generated heat energy to the dielectric target layer.

A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board comprises the following steps: drilling a hole on a substrate, the hole comprising a blind hole and/or a through hole; on a surface of the substrate, forming a photoresist layer having a circuit negative image; forming a conductive seed layer on the surface of the substrate and a hole wall of the hole; removing the photoresist layer, and forming a circuit pattern on the surface of the substrate, wherein forming a conductive seed layer comprises implanting a conductive material below the surface of the substrate and below the hole wall of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board comprises the following steps: drilling a hole on a substrate, the hole comprising a blind hole and/or a through hole; on a surface of the substrate, forming a photoresist layer having a circuit negative image; forming a conductive seed layer on the surface of the substrate and a hole wall of the hole; removing the photoresist layer, and forming a circuit pattern on the surface of the substrate, wherein forming a conductive seed layer comprises implanting a conductive material below the surface of the substrate and below the hole wall of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.

A circuit board comprising a substrate and a circuit trace. The substrate includes a surface etched via ion milling over a circuit area such that the surface has an increased roughness. The circuit trace forms portions of an electronic circuit and may be created from a thin conductive film deposited on the surface within the circuit area. The circuit trace adheres more strongly to the roughened substrate surface, which prevents the circuit trace from peeling or becoming delaminated from the substrate surface.

Disclosed herein may be an apparatus and method for detecting ion migration. The apparatus may include: a first printed circuit board (PCB) pad coupled with a ground; a second PCB pad disposed at a position spaced apart from the first PCB pad; a power supply unit configured to supply power to the second PCB pad; a voltage detection unit configured to detect a voltage of an output terminal of the first PCB pad; and a control unit configured to determine whether ion migration has occurred between the first PCB pad and the second PCB pad using the voltage detected by the voltage detection unit.

The invention is directed to a method for treating an electronic device that is encapsulated in a plastic package, said method comprising the steps of providing a gas stream comprising a hydrogen source; inducing a hydrogen-containing plasma stream from said gas; and directing the hydrogen-containing plasma stream to the plastic package to etch the plastic package.

A single-layer circuit board, multi-layer circuit board, and manufacturing methods therefor. The method for manufacturing the single-layer circuit board (10) comprises the following steps: drilling a hole on a substrate (11), the hole comprising a blind hole and/or a through hole (S1); on a surface (12) of the substrate, forming a photoresist layer having a circuit negative image (S2); forming a conductive seed layer on the surface (12) of the substrate and a hole wall (19) of the hole (S3); removing the photoresist layer, and forming a circuit pattern on the surface (12) of the substrate (S4), wherein Step S3 comprises implanting a conductive material below the surface (12) of the substrate and below the hole wall (19) of the hole via ion implantation, and forming an ion implantation layer as at least part of the conductive seed layer.